Abstract:The seamless integration of two-dimensional (2D) ferromagnetic materials with similar or dissimilar materials can widen the scope of low-power spintronics. In this regard, a vertical van der Waals (vdW) heterostructure of 2D ferromagnets with semiconducting transition metal dichalcogenides (TMDCs) forms magnetic junctions with exceptional stability and electrical control. Interestingly, 2D metallic Fe3GeTe2 (FGT) reveals above room temperature Curie temperatures and has large magneto anisotropy due to spin-orbit coupling. In addition, it also possesses topological states and a large Berry curvature. Herein, we designed the FGT/WSe2/FGT vdW heterostructure with a uniform and sharp interface so that FGT could maintain its inherent electronic properties. Also, the uniform thickness of the barrier provides a smooth flow of spins through the junctions as tunneling exponentially decays with an increasing barrier thickness. However, strong energy-dependent spin polarization is crucial for achieving optimum spin valve properties, such as large tunneling magnetoresistance (TMR) along with the manipulation of the magnitude and sign reversal. We have observed a shifting of high-energy localized minority spin states toward low-energy regions, which causes spin polarization fluctuation between -42.5% and 41% over a wide range of bias voltage. This leads to a negative TMR% of ∼-100% at 0.1 V Å-1 and also a large positive TMR% at 0.2 V Å-1 and -0.4 V Å-1. Besides, the system exhibits a highly tunable large anomalous Hall conductivity (AHC) of 626 S cm-1. Interestingly, such unprecedented electronic behaviour with large and switchable spin polarization, anomalous Hall conductivity and TMR can be incorporated into MTJ devices, which provide electrical control and long-range spin transport. Additionally, the system emerges as a standout candidate in low-power spintronic devices (e.g., MRAM and magnetic sensors) owing to its distinctive energy-dependent electronic structure with a wide range of external bias.

Ferroelectric Switching of Pure Spin Polarization in Two-Dimensional Electron Gas

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Ferroelectric control of a spin-polarized two-dimensional electron gas

Nonvolatile Electrical Control Of 2d Cr2ge2te6 And Intrinsic Half Metallicity In Multiferroic Hetero-Structures

Interfacial Crystal Hall Effect Reversible by Ferroelectric Polarization

Switchable Metal-to-half-metal Transition at the Semi-Hydrogenated Graphene/ferroelectric Interface.

Tunable Ferroelectricity and Anisotropic Electric Transport in Monolayer Β-Gese

Controllable spin splitting in 2D Ferroelectric few-layer ${$γ}$-GeSe

Computational study on ferroelectric control over spin polarization in the bipolar magnetic semiconductor

The electronic and magnetic properties modulated by ferroelectric polarization switching in two-dimensional VSeTe/Sc2CO2 van der Waals heterostructure

Ferroelectric Quantum Spin Hall Effect in Two-Dimensional In2TeS2

Ferroelectricity-Driven Metallicity and Magnetic Skyrmions in van der Waals Cr2Ge2Te6/Hf2Ge2Te6 Multiferroic Heterostructure

Highly Efficient Spin-Orbit Torque Switching in Bi2Se3/Fe3GeTe2 van der Waals Heterostructures

Electronic structure, Curie temperature, and magnetic transport of a two-dimensional multiferroic heterostructure

Spin-reorientation driven emergent phases and unconventional magnetotransport in quasi-2D vdW ferromagnet Fe 4 GeTe 2

Nonvolatile Electrical Control and Reversible Gas Capture by Ferroelectric Polarization Switching in 2D FeI2/In2S3 van der Waals Heterostructures

Spin scattering and Hall effects in monolayer Fe3GeTe2

Tunable Spin Polarization in a Two-Dimensional Electron Gas Modulated by a Ferromagnetic Metal Stripe and a Schottky Metal Stripe

Ferroelectric control of the spin texture in germanium telluride

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve

Exchange bias and spin–orbit torque in the Fe 3 GeTe 2 -based heterostructures prepared by vacuum exfoliation approach