Abstract:In this work, high-k composite TiAlO film has been investigated as charge-trapping material for nonvolatile memory applications. The annealing formed Al2O3-TiAlO-SiO2 dielectric stack demonstrates significant memory effects and excellent reliability properties. The memory device exhibits a large memory window of ~2.6 V under ±8 V sweeping voltage, and it shows only ~14% charge loss after more than 10 years' retention, indicating excellent charge retention properties. The electronic structures of the Al2O3-TiAlO-SiO2 have been studied by X-ray photoelectron spectroscopy measurements, and it reveals that the quantum well and the defect traps in TiAlO film can provide a >1.8 eV deep barrier for charge confinement in the TiAlO layer. The mixing between Al2O3 and TiO2 can increase the defects related to the under-coordinated Ti3+ atoms, thereby enhancing the charge-trapping efficiency of the device. Our work implies that high-k TiAlO composite film is promising for applications in future nonvolatile charge-trapping memories.

Title Improved Charge-Trapping Characteristics of BaTiO 3 by ZrDoping for Nonvolatile Memory Applications

Improved Charge-Trapping Characteristics of $ \hbox{batio}_{3}$ by Zr Doping for Nonvolatile Memory Applications

Charge-trapping characteristics of BaTiO 3 with various Zr contents for flash memory applications

Improved Charge-Trapping Characteristics of ZrO 2 by Al Doping for Nonvolatile Memory Applications

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Y-Doped BaTiO 3 As a Charge-Trapping Layer for Nonvolatile Memory Applications

Charge-Trapping Characteristics of Batio3 with and Without Nitridation for Nonvolatile Memory Applications

Performance Improvements of Metal–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory with ZrO2Charge-Trapping Layer by Using Nitrogen Incorporation

Title Charge-Trapping Characteristics of BaTiO 3 with and withoutNitridation for Nonvolatile Memory Applications

Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO 2)0.2 charge trapping layer

Effect of Energy-Band Bending Induced by Precipitation of ZrO2nanocrystals on Memory Characteristics of Charge-Trap Flash Memory

Improvement Of Resistive Switching Properties In Zro2-Based Reram With Implanted Ti Ions

Charge-Trapping Characteristics of Fluorinated Thin Zro2 Film for Nonvolatile Memory Applications

Improvement of Resistive Switching Properties in $ \Hbox{zro}_{2}$-Based ReRAM with Implanted Ti Ions

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

The Charge Storage Characteristics of Zro2 Nanocrystallite-Based Charge Trap Nonvolatile Memory

Improved Performance of Hf-Doped Batio3 As Charge-Traping Layer for Flash Memory Applications

Improvement of Resistive Switching Properties in <formula formulatype="inline"><tex Notation="TeX">$ \hbox{ZrO}_{2}$</tex></formula>-Based <emphasis emphasistype="roman">ReRAM</emphasis> With Implanted Ti Ions

Enhanced Memory Performance by Tailoring the Microstructural Evolution of (zro 2 ) 0.6 (sio 2 ) 0.4 Charge Trapping Layer in the Nanocrystallites-Based Charge Trap Flash Memory Cells

Improved Memory Characteristics by NH3Post Annealing for ZrO2Based Charge Trapping Nonvolatile Memory

Fluorinated $\hbox{srtio}_{3}$ As Charge-Trapping Layer for Nonvolatile Memory Applications