Characterization of superconducting Ti transition edge sensors with different microbridge length

W. Zhang,J. Q. Zhong,W. Miao,Q. J. Yao,D. Liu,Z. Wang,S. C. Shi,T. J. Chen,L. H. Chang,M. J. Wang,D.,Prele,F. Voisin,M. Piat,F. Pajot
2015-01-01
Abstract:We report on the performance of superconducting Ti transition edge sensors (TES) with different microbridge length varying from 1m to 2.7m. The TES devices are based on thin Ti film, evaporated on a high-resistivity silicon substrate. The current-voltage characteristics are measured at different bath temperatures using commercial SQUID amplifiers, from which the thermal conductance (G) is obtained. We also measure the current noise at different bias voltages. The obtained electrical noise equivalent power (NEP) from its calculated current responsivity and measured current noise is about 5x10W/√Hz, which is low enough for ground-based terahertz superconducting imaging array (TeSIA), aiming at Dome A, Antarctica.
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