Abstract:The long-time stability of the enhanced porous silicon (PS) optoelectronic properties using samarium (Sm) pore-filling were investigated based on experimental results. Non treated natural and thermally oxidized PS samples were taken as reference. The morphology evolution of the samples was observed by using a scanning electron microscope (SEM). Fourier-Transform Infrared spectra (FTIR) of Sm treated PS (Sm-PS) show the appearance of new band localized at 470 cm −1 and attributed to Sm–O-Si which is persistent after 7 months of air exposure. Photoluminescence (PL) characterization demonstrated a stable threefold increase in the PL intensity of the Sm-PS. However, a blue shift from 1.829 eV to 1.835 eV and 1.890 eV for both natural aged and the thermal annealed PS samples accompanied with a dwindling in the intensity are observed and attributed to the decrease in the silicon crystallite size. The deconvolution of Raman spectrum of Sm-PS sample shows the existence of three bonds localized at 520, 518 and 506 cm −1 and attributed to the crystalline Si substrate, the formation of silicon nanocrystallites (SiNCs) and the compressive strained PS layer after the deposition of Sm layer, respectively. The electrical properties were analyzed based on the effective minority carrier lifetime (τ eff ) and surface recombination velocity (S eff ). The Sm treated samples show the highest τ eff about 52 μs and as a result the lowest S eff comparing to the freshly prepared PS which exhibits a τ eff of about 13.2 μs due to the passivating capability of Sm layer. These results highlight the effectiveness of coating PS with Sm layer suitable for light emission and photovoltaic applications.

XPS Study of Porous Silicon

The Influence of Microstructure on Optical Properties of Porous Silicon

A Comparison of Cathodoluminescence and Photoluminescence of Porous Silicon and the Influence of Aging and Electron Irradiation of These Properties

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

Al-assisted Anodic Etched Porous Silicon

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Effect of post-treatment processes on the photoluminescence of porous silicon

Studies on microstructure and photoluminescence property of porous silicon

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Characterization of Stain Etched Porous Si with Photoluminescence, Electron-Paramagnetic-Resonance, and Infrared-Absorption Spectroscopy

The Influence Of Chemical Oxidation On Surface State And Photoluminescence Of Porous Silicon

Atomic Force Microscopic Studies of Light-Emitting Porous Silicon

Optical Absorption and Photoluminescence Studies of Free-Standing Porous Silicon Films with High Porosities

Luminescence and photoconductivity properties of porous polycrystalline silicon

In Situ Silanization Reaction on the Surface of Freshly Prepared Porous Silicon

Photoluminescence of oxidized porous silicon under UV-light illumination

Microstructure, Heat Treatment, and Oxidation Study of Porous Silicon Formed on Moderately Doped P-Type Silicon

Long-time Stability of the Enhanced Porous Silicon Opto-electrical Properties by Samarium Pore-filling

Stable Blue Light Emission from Oxidized Porous Silicon

Preparation and Characterization of Freestanding Porous Silicon Films with High Porosities

PEAK ENERGY FOCUSING OF PHOTOLUMINESCENCE FROM POROUS SILICON DURING STORING IN AIR OR 200℃ THERMAL OXIDATION