Abstract:Ferroelectric (FE) materials, especially ABO(3)FE perovskite oxides, have been extensively studied for their important applications in memory devices, electronics and sensors. However, the integration of FE perovskite oxides into miniaturized memory and electronic devices has been impeded by the critical thickness limitation, as out-of-plane ferroelectricity in most FE perovskite oxides will disappear when the oxide thin film thickness is below a critical value. On the other side, CuInP2S6(CIPS) nano-flake, a prototypical two-dimensional (2D) FE material, has recently been demonstrated to display stable out-of-plane ferroelectricity at the atomic layer thickness by experiment, which offers a new candidate for developing FE devices in the 2D nanoscale regime. Herein, after investigation of the structural and ferroelectric properties of 2D CIPS layers, especially the interactions between out-of-plane polarization and the corresponding depolarization field using first-principles calculations, we reveal that out-of-plane ferroelectricity can even persist in the CIPS monolayer, which is only 3.4 angstrom in thickness. Moreover, in order to explore the potential application of 2D FE CIPS layers as minimized FE devices, we design an ultrathin ferroelectric tunneling junction (FTJ) composed of a graphene/CIPS monolayer/graphene vertical van der Waals (vdW) heterostructure. Our transport simulations based on the non-equilibrium Green's function formalism predict that such an ultrathin FTJ device can still exhibit the typical tunneling electroresistance (TER) effect, where tunneling current strongly depends on the direction of FE polarization. Our work not only elucidates the origin of stable out-of-plane ferroelectricity appearing in 2D CIPS layers, but also demonstrates the practical application of a CIPS based 2D FTJ as a miniaturized, multi-functional and low-power consumption memory device for modern electronics.

An Ultrathin Two-Dimensional Vertical Ferroelectric Tunneling Junction Based On Cuinp(2)S(6)Monolayer

Van Der Waals Antiferroelectric Magnetic Tunnel Junction: A First-Principles Study of a CrSe2/CuInP2S6/CrSe2 Junction.

Theoretical study of metal contacts to the monolayer ferroelectric material CuInP2S6 and its device applications

Giant Tunneling Electroresistance in Two-Dimensional Ferroelectric Tunnel Junctions with Out-of-plane Ferroelectric Polarization

Flexoelectric Engineering of Van Der Waals Ferroelectric CuInP2S6.

Ferroelectricity and Piezoelectricity in 2D Van der Waals CuInP2S6 Ferroelectric Tunnel Junctions

Giant Tunneling Electroresistance in 2-Din-plane Ferroelectric Tunnel Junctions Based on a Α-In2se3/cd3c2 Heterostructure

Ferroelectric field effect transistors based on two-dimensional CuInP2S6 (CIPS) and graphene heterostructures

Two-Dimensional Antiferroelectric Tunnel Junction

Giant tunneling electroresistance in 2D bilayer-In 2 Se 3 -based out-of-plane ferroelectric tunnel junction

Giant tunneling electroresistance in a 2D bilayer-In 2 Se 3 -based out-of-plane ferroelectric tunnel junction.

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Giant tunneling electroresistance in a 2D bilayer-In<sub>2</sub>Se<sub>3</sub>-based out-of-plane ferroelectric tunnel junction

Room-temperature Ferroelectricity in CuInP2S6 Ultrathin Flakes

Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO

High Tunneling Electroresistance in Ferroelectric Tunnel Junctions Based on 2-D Bilayer Ferroelectric CuInP2Se6/Ga2O2O3 Van Der Waals Heterostructure

Two-dimensional ferroelectric tunnel junction: the case of monolayer In:SnSe/SnSe/Sb:SnSe homostructure

2D Ferroionics: Conductive Switching Mechanisms and Transition Boundaries in Van der Waals Layered Material CuInP<sub>2</sub>S<sub>6</sub>

Van der Waals Antiferroelectric Magnetic Tunnel Junction: A First-Principles Study of a CrSe 2 /CuInP 2 S 6 /CrSe 2 Junction