Abstract:Low-plasma and high-temperature chemical vapor deposition of Si-rich SiO(x) for concurrently enhancing the carrier tunneling and light emission efficiency is investigated. The O/Si composition ratio of the SiO(x) film significantly decreases from 2 to 1.2 as the substrate temperature increases from 200 to 400 °C, corresponding to the enhanced precipitation of Si nanocrystals in the Si-rich SiO(x). In comparison with stoichiometric SiO(2), the Si-L(2,3) transition induced kinetic energy loss of the primary electron transmitted through the Si-rich SiO(x) sample grown at 400 °C is red-shifted by 5 eV. The strongest Si nanocrystal related photoluminescence (PL) can be obtained from the Si-rich SiO(x) film prepared at a threshold plasma power of 30 W and substrate temperature of 400 °C. In low-plasma and high-temperature deposited samples, the threshold Fowler-Nordheim (F-N) tunneling field and the indium tin oxide (ITO)-SiO(x) junction potential barrier height of ITO/SiO(x) /p-Si/Al metal-oxide-semiconductor light emitting diodes (MOSLEDs) are concurrently reduced due to the increasing density of Si nanocrystals precipitated within the SiO(x) matrix. A thermal activation energy of 0.8 eV was observed for initiating the F-N tunneling process in the MOSLEDs. The electroluminescence (EL) intensity and efficiency of the MOSLEDs are improved by at least 10 dB due to the oxygen deficient plasma enhanced chemical vapor deposition (PECVD) of Si-rich SiO(x) at low plasma power and high temperatures.

Electron Emission Properties of Silicon-Rich Silicon Oxide Film Prepared by Reactive Magnetron Sputtering Deposition and Rapid Thermal Annealing

Properties of amorphous SiO2 films prepared by reactive RF magnetron sputtering method

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Optical Properties Study of Silicon Oxynitride Films Deposited by RF Magnetron Sputtering

Electroluminescence of As-Sputtered Silicon-Rich SiOx Films

The Power Source Effect on SiOx Coating Deposition by Plasma Enhanced Chemical Vapor Deposition

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Low-plasma and high-temperature PECVD grown silicon-rich SiO(x) film with enhanced carrier tunneling and light emission

Surface Properties of Silicon Oxide Films Deposited Using Low-Pressure Dielectric Barrier Discharge

Effects of Si Content on the Optical and Electrical Properties of SiOx Films

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Preparation Of Sio2 Thin Films On High Speed Steel Substrates By Rf Reactive Magnetron Sputtering

Properties of Si-rich SiO2 Films by RF Magnetron Sputtering

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Nanostructure and Optical Properties of Sio2 Films Prepared by Reactive Midfrenquency Magnetron Sputtering

Properties of the Silicon Dioxide Films Fabricated by DC Reactive Magnetron Sputtering

Room-temperature 1.54-μm electroluminescence from Er-doped Si-rich SiO2 films deposited on p-Si by magnetron sputtering

Electron Emission Properties Of Porous Silicon Cold Cathode Prepared On Single-Crystal Silicon By Anodic Etching And Oxidation Method

Preparation of Silicon Oxide Films by a Hot-Target Impulse Magnetron Deposition in a Reactive Mixture

Microstructures and Electrical Properties of Nanostructured Cr2O3 Thin Films Deposited by Dual-Target Reactive High-Power Impulse Magnetron Sputtering

Deposition of SiOx films with a capacitively-coupled plasma at atmospheric pressure