Semiconductor measurement technology: A reverse-bias safe operating area transistor tester

D. Berning

Abstract:1

Engineering,Materials Science

What problem does this paper attempt to address?

A Novel Method For On-Line Junction Temperature Measurement Of Power Modules

Yulin Zhong,Chushan Li,David Xu

DOI: https://doi.org/10.1109/IPEMC.2016.7512794

2016-01-01

Abstract:On-line junction temperature measurement is of critical importance in high-power density and high reliability applications of power electronics. Most currently available methods based on temperature-sensitive-electrical-parameters (TSEPs) are limited in real applications due to complexity and inaccuracy. A novel method based on multiple thermal resistors was proposed to monitor the junction temperature of power devices. An accurate thermal model was built and relative thermal transfer matrixes were obtained. Also a novel layout alteration for IGBT package was proposed to improve the robustness and rapidity of this method. Key parameters extraction was elaborated to enhance its practicability. Multiple simulations verified the validity of this method and demonstrated its superiority to the conventional TSEPs-based methods as well.
On-Line Measurement of Chip Temperature Based on Blocking Leakage Current of the Insulated-Gate Bipolar Transistor Module in the High-Temperature Reverse-Bias Test

Jinyuan Li,Yunong Liu,Yaosheng Li,Zhongyuan Chen,Chunsheng Guo,Hao Li

DOI: https://doi.org/10.1109/access.2021.3057538

IF: 3.9

2021-01-01

IEEE Access

Abstract:In high-temperature reverse-bias test of an insulated-gate bipolar transistor module, the problem of self-heating in chip resulting from power loss arises with high frequency. To address this problem, the law of the variation in leakage current with temperature for the reverse-bias state of a device is derived and utilized to establish a temperature calibration curve, with which the online measurement of the insulate-gate bipolar transistor module chip temperature can be implemented directly by real-time monitoring of device leakage current in high-temperature reverse-bias test. The method we proposed solves the problem of large measurement error in chip temperature obtained by traditional thermal resistance calculation method. In addition, real-time chip temperature can be monitored without introducing additional test circuit or HTRB interruption experiment. To demonstrate the effectiveness of the proposed method, the switching small-current temperature measurement method is used to make comparison, and the experiment result indicates that the temperature of the chip in the blocking test can be obtained with high precision by using the leakage current measurement method presented in this work.

computer science, information systems,telecommunications,engineering, electrical & electronic
Using Nmos Transistors As Switches For Accuracy And Area-Efficiency In Large-Scale Addressable Test Array

Weiwei Pan,Jie Ren,Yongjun Zheng,Zheng Shi,Xiaolang Yan

DOI: https://doi.org/10.1109/ISQED.2011.5770778

2011-01-01

Abstract:Addressable test array needs switches to select and isolate testing structures; however, switches occupy extra chip area and limit the array size and measurement accuracy due to additional switch leakage. In this paper, we implement the switch by NMOS transistor, thus improve the design of addressable test array on array size, measurement accuracy as well as area efficiency. Simulations in a 65 nm technology have verified this technique's feasibility and reliability. A large 64x64 array using this 65 nm technology has been designed in a systematic flow and manufactured for silicon data, which further confirms the effectiveness of the presented technique.
Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing

Daniel R. Ward,D. E. Savage,M. G. Lagally,S. N. Coppersmith,M. A. Eriksson

DOI: https://doi.org/10.1063/1.4807768

2013-05-08

Abstract:Measurement of multiple quantum devices on a single chip increases characterization throughput and enables testing of device repeatability, process yield, and systematic variations in device design. We present a method that uses on-chip field-effect transistor switches to enable multiplexed cryogenic measurements of double quantum dot Si/SiGe devices. Multiplexing makes it feasible to characterize a number of devices that scales exponentially with the number of external wires, a key capability given the significant constraints on cryostat wiring currently in common use. We use this approach to characterize three nominally identical quantum-point contact channels, enabling comparison of their threshold voltages for accumulation and their pinch-off voltages during a single cool-down of a dilution refrigerator.

Mesoscale and Nanoscale Physics
Bidirectional Current 4h‐sic VJFET

P. Brosselard,D. Tournier,A. Mihaila,F. Udrea,S. J. Rashid,P. Godignon,G. Amaratunga,J. Millan

DOI: https://doi.org/10.1002/pssc.200674113

2007-01-01

Abstract:Silicon Carbide is an attractive material to develop new generation of power devices due to its outstanding physical and thermal properties. Due to the NET performances, the reverse mode shows a great interest for power applications particularly concerning bidirectional current capability. Besides, the device temperature behaviour has been characterised up to 300 degrees C. We have observed excellent temperature performances in the reverse and forward conduction modes since R-on only shows a x5 and x4 increase, respectively, from 30 degrees C to 300 degrees C. In blocking mode, the leakage current is below the nA range at room temperature and rises the mu A range at 300 degrees C, remaining very low compared to Si devices. In conclusion, one may state that the SiC NET is a suitable switch for high temperature power applications, showing bidirectional current capability. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Hart Michael J.,Evans Alan G. R.,Amaratunga Gehan A. J.

DOI: https://doi.org/10.1557/proc-71-429

1986-01-01

Abstract:Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900–1200°C; the normal isothermal e-beam anneals, together with sub-second fast anneals and ‘dual-pulse’ anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature in less than 0.5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model. Defects remaining in diodes fabricated with the forementioned implants after these anneal cycles have been studied using DLTS techniques. Trap densities for the three types of e-beam anneal are comparable to those for furnace annealed diodes, as are the reverse leakage currents measured (typically 2–5nA for a 0.85mm2 diode at −5V).
A Method of Reducing Leakage Current Measurement Error in the Automatic Test System for Semiconductor Devices

Yang Yu,Qingxin Liu,Peng Sun,Zhiming Yang

DOI: https://doi.org/10.1109/phm-yantai55411.2022.9942036

2022-01-01

Abstract:With the rapid development of electronic technology, semiconductor devices as the main bottom devices of various electronic systems, its related test technology and test equipment have always been an important guarantee of system reliability. In the automatic test system for semiconductor devices, the excitation source and measuring instrument adopt source measure unit, and the signal switching device adopts relay array. When testing different unit under test, one relay in the relay array will be turned on and connected to the test circuit, and the other relays are in the off state. There will be a large impedance insulation resistance between the relay switch contacts in the off state, which will lead to the introduction of leakage current on the order of nA to μA. Because the leakage current of semiconductor devices is usually between a few nA and a few μA, it is necessary to reduce the leakage current error caused by relay insulation resistance when using the automatic test system for semiconductor devices. In order to solve the above problem, this paper puts forward three methods: the selection of relay type, the grafting of switch contact pin and the design of equipotential shielding layer, so as to reduce the leakage current error caused by the insulation resistance of the relay, and then improve the accuracy of the test results.
Online Junction Temperature Measurement of Power Semiconductor Devices

M. Nitzsche,Philipp Ziegler,K. Sharma,Joerg Roth-Stielow,Tobias Schmid,J. Ruthardt

2020-07-07

Abstract:Monitoring the junction temperature of power electronic devices enables over-temperature protection, health monitoring, online lifetime estimation or junction temperature control to extend the expected lifetime. A method for online junction temperature estimation in power semiconductor devices based on the temperature sensitive reverse-recovery behavior of pin-diodes is presented in this paper. Since the reverse-recovery time of diodes is a function of their junction temperature, it can be used for junction temperature measurement. Therefore, a simple measurement circuit is developed to determine the duration between the start of the load current commutation and the instant of time when the diode is in blocking mode. This duration, which is related to the reverse-recovery-time, is defined as the quasi-reverse-recovery time.

Engineering,Materials Science,Physics
A GUI Based Automatic Tester with A Novel Heating Method for Power Semiconductor Device Dynamic Measurement

Qingxuan Ma,Liqi Zhang,Alex Q. Huang,Meng-Chia Lee

DOI: https://doi.org/10.1109/ecce.2018.8558177

2018-01-01

Abstract:Double pulse test is commonly used to evaluate and measure the switching loss of power semiconductor devices under different conditions such as different temperatures. Yet most designed testers do not have a device heating system or use a hot plate or thermal oven to heat up the device under test, which makes it inconvenient and expensive to evaluate device switching performance under different temperatures. In this paper, a low stray inductance tester with device heating system to test TO-247 packaged DUT is presented and it could heat the DUT up to 175°C. An automatic control system is also designed, so that DUT dynamic behavior could be evaluated under various current and temperature conditions automatically.
High Single-Event Burnout Resistance 4H-Sic Junction Barrier Schottky Diode

Mao-Bin Li,Fei Cao,Hai-Fan Hu,Xing-Ji Li,Jian-Qun Yang,Ying Wang

DOI: https://doi.org/10.1109/jeds.2021.3084797

2021-01-01

IEEE Journal of the Electron Devices Society

Abstract:This paper presents a single-event burnout (SEB) resistance method for 4H-SiC Junction Barrier Schottky Diode (JBS) under high bias voltage and linear energy transfer (LET) conditions. The method is validated via two-dimensional numerical simulations. The analysis and comparison of conventional 4H-SiC JBS and 4H-SiC Multi-Buffer Layer JBS (MBL-JBS) diodes verify the resistance tolerance of the latter device to SEB. Silvaco TCAD simulation results prove that the 4H-SiC MBL-JBS modulates the drift region's electric field distribution and disperses the high-peak electric field at the N-/N+ junction. Moreover, it reduces the impact generation rate at the Schottky, PN and N-/N+ junctions to achieve SEB tolerance. The device's SEB performance is optimized by adjusting the 4H-SiC MBL-JBS structure parameters, and the SEB threshold voltage is significantly improved compared with the traditional structure.
Measuring circuits used in an automatic transistor tester

J. Sparkes

DOI: https://doi.org/10.1049/JBIRE.1962.0123

1962-12-01

Abstract:A machine which is capable of testing, sorting and measuring all the significant parameters of germanium r.f. alloy transistors at a rate of 1200 transistors per hour is described. Since the machine uses essentially only one test head, each measuring circuit, which is mounted on a printed circuit card, is connected in turn to this test head by means of dry reed relays. The paper describes how 10 d.c. parameters and 7 a.c. measurements and tests are carried out on each transistor and explains some of the circuits in detail. In addition the relative merits of single test station and multi-test station machines are discussed.

Engineering,Materials Science
Understand NBTI Mechanism by Developing Novel Measurement Techniques

Ming-Fu Li,Daming Huang,Chen Shen,T. Yang,W. J. Liu,Zhiying Liu

DOI: https://doi.org/10.1109/TDMR.2007.912273

2008-01-01

Abstract:Our recent investigations and understanding of the negative bias temperature instability (NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The progressive understanding of NBTI mechanism is mainly related to the novel measurement techniques we developed. We show in this paper the following: 1) For the conventional charge pumping and direct-current current-voltage interface trap measurement, the interface trap density Nit is underestimated due to the recovery during measurement delay. The existing Nit data should be reexamined; 2) an ultrafast pulsed I-V method [fast pulsed measurement (FPM)] is developed to measure DeltaVth with measurement time tM = 100 ns. It can be considered as free from recovery during measurement; 3) due to the degradation during the initial threshold voltage measurement, the existing slow on-the-fly (OTF) DeltaVth measurement distorts (overestimates) the slope and induces a kink at early stress time in the Log-Log curve of the time evolution of NBTI degradation. A fast OTF DeltaVth measurement method is developed to overcome this problem; 4) a novel OTF interface trap (OFIT) measurement method is developed which is free from interface trap recovery during measurement. The OFIT measurement provides the most reliable data to inspect the interface trap R-D model; 5) combining the OFIT and FPM measurements, we decompose the NBTI DeltaVth into two components: A slow DeltaVth it component contributed by with a slow recovery time longer than 50mus and a fast DeltaVth ox component contributed by DeltaVox with a broad spectrum of recovery time, including a component with very fast recovery time (100 ns); and 6) the dynamic degradation by DeltaVth it component is frequency-independent and can be measured by a dc method, whereas the dynamic degradation DeltaVth ox by component measured by FPM is increased by increasing frequency. The ten-year lifetime of the p-MOSFETs is mainly determined by the degradation of the DeltaVth it component.
A self-biased neutron detector based on an SiC semiconductor for a harsh environment

Jang Ho Ha,Sang Mook Kang,Hwan Park,Han Soo Kim,Nam Ho Lee,Tae-Yung Song,Se Hwan Park

DOI: https://doi.org/10.1016/j.apradiso.2009.02.013

IF: 1.787

2009-07-01

Applied Radiation and Isotopes

Abstract:Neutron detector based on radiation-hard semiconductor materials like SiC, diamond and AlN has recently emerged as an attractive device for an in-core reactor neutron flux monitoring, a spent fuel characterization, and a home land security application. For the purpose of field measurement activity, a radiation detector having a low-power consumption, a mechanical stability and a radiation hardness is required. Our research was focused on the development of a radiation-resistive neutron semiconductor detector based on a wide band-gap SiC semiconductor. And also it will be operated at a zero-biased voltage using a strong internal electric field. The charge collection efficiency (CCE) was over 80% when the biased voltage was zero. When the biased voltage was applied above 20V, the charge collection efficiency reached 100%.

radiology, nuclear medicine & medical imaging,nuclear science & technology,chemistry, inorganic & nuclear
Analysis Of Sicbjt Rbsoa

Yan Gao,Alex Q. Huang,Bin Chen,Anant K. Agarwal,Sumi Krishnaswami,Charles Scozzie

DOI: https://doi.org/10.1109/ISPSD.2006.1666126

2006-01-01

Abstract:The reverse biased safe operating area (RBSOA) of 1200V SiC BJT has been systematically analyzed by numerical simulation and experiments for the first time and compared with those for Si BJT. A square RBSOA of SiC BJT is predicted and verified by experiments. Our experiment results show that the SiC BJT can safely turn off 1100V, 67A (2990A/cm(2)), corresponding to 3.7 MW/cm(2) peak turn-off power density. This is an extremely high power density indicating that no early "Second Breakdown" occurs.
700-V <i>p</i>-GaN Gate HEMT with Low-Voltage Third Quadrant Operation Using Area-Efficient Built-in Diode

Li Zhang,Jin Wei,Zheyang Zheng,Wenjie Song,Song Yang,Sirui Fcng,Kevin J. Chen

DOI: https://doi.org/10.1109/ispsd46842.2020.9170075

2020-01-01

Abstract:A 700-V normally-off p-GaN gate HEMT featuring area-efficient distributed built-in Schottky barrier diode (SBD) is demonstrated with low-loss reverse conduction capability. The reverse conduction voltage of the device V-RC is -2.1 V (@ID = -20 mA/mm). As the reverse conduction is through the built-in SBD, the low VRC of the proposed transistor is independent of the HEMT's VTH and turn-off gate bias V-GS. On the contrary, the V-RC of a conventional p-GaN gate power transistor is not only much higher but also strongly dependent on the VTH and OFF-state V-GS. The built-in SBD elements are embedded into the HEMT's source side in a distributed fashion along the width of the device, so that the SBD and HEMT share a common access region in forward and reverse conduction, leading to reduced ON-resistance (R-ON) compared to the scheme with side-by-side transistor/SBD pair. The anode of built-in Schottky contact is embedded at the source side and is shielded from the high electric field by the gate field plate. Thus, the reverse leakage current of Schottky contact is well-suppressed.
Theoretical and Experimental Analyses of Safe Operating Area (soa) of 1200-V 4H-Sic Bjt

Yan Gao,Alex Q. Huang,Anant K. Agarwal,Qingchun Zhang

DOI: https://doi.org/10.1109/ted.2008.926682

IF: 3.1

2008-01-01

IEEE Transactions on Electron Devices

Abstract:The safe operating area (SOA) of 1200-V SiC bipolar junction transistor (BJT) is investigated by experiments and simulations. The SiC BJT is free of the second breakdown even under the turn-off power density of 3.7 MW/CM2. The theoretical boundary of reverse-biased SOA caused by the false turn-on is obtained by simulations. The short-circuit capability of the 1200-V SiC BJT is also investigated theoretically and experimentally. Self-heating is considered by the nonisothermal simulation., and -1800-K maximum local temperature is the simulated critical temperature of device failure. The surface condition is very critical for short-circuit capability. From simulations, when the interface trap density increases, the critical temperature decreases. This is believed to be the reason why the experimental results show much shorter short-circuit withstand time than the simulation showed.
A nA-Range Area-Efficient Sub-100-ppm/°C Peaking Current Reference Using Forward Body Biasing in 0.11-$μ$m Bulk and 22-nm FD-SOI

Martin Lefebvre,David Bol

DOI: https://doi.org/10.1109/JSSC.2024.3406423

2024-06-13

Abstract:In recent years, the development of the Internet of Things (IoT) has prompted the search for nA-range current references that are simultaneously constrained to a small area and robust to process, voltage and temperature variations. Yet, such references have remained elusive, as existing architectures fail to reach a low temperature coefficient (TC) while minimizing silicon area. In this work, we propose a nA-range constant-with-temperature (CWT) peaking current reference, in which a resistor is biased by the threshold voltage difference between two transistors in weak inversion. This bias voltage is lower than in conventional architectures to cut down the silicon area occupied by the resistor and is obtained by forward body biasing one of the two transistors with an ultra-low-power voltage reference so as to reduce its threshold voltage. In addition, the proposed reference includes a circuit to suppress the leakage of parasitic diodes at high temperature, and two simple trimming mechanisms for the reference current and its TC. As the proposed design relies on the body effect, it has been validated in both 0.11-$\mu$m bulk and 22-nm fully-depleted silicon-on-insulator, to demonstrate feasibility across different technology types. In post-layout simulation, the 0.11-$\mu$m design generates a 5-nA current with a 65-ppm/°C TC and a 2.84-%/V line sensitivity (LS), while in measurement, the 22-nm design achieves a 1.5-nA current with an 89-ppm/°C TC and a 0.51-%/V LS. As a result of the low resistor bias voltage, the proposed references occupy a silicon area of 0.00954 mm$^2$ in 0.11 $\mu$m (resp. 0.00214 mm$^2$ in 22 nm) at least 1.8$\times$ (resp. 8.2$\times$) smaller than fabricated nA-range CWT references, but with a TC improved by 6.1$\times$ (resp. 4.4$\times$).

Hardware Architecture
Safe Operating Area Design

B. Jayant Baliga

DOI: https://doi.org/10.1016/b978-0-323-99912-0.00014-3

2023-01-01

Abstract:The ruggedness of the insulated gate bipolar transistor (IGBT) is one of its important attributes from the application standpoint. Models for the forward, reverse, and short circuit safe operating area are provided in this chapter. Latch-up of the parasitic thyristor in the IGBT can lead to destructive failure. Cell designs for suppressing the latch-up of the parasitic thyristor in the IGBT are described, including adding a deep P-region, reducing the gate oxide thickness, adding a diverter region, and improving the polysilicon gate layout topology. The performance of silicon carbide devices is contrasted with that of silicon devices.
Determination of the Leakage Current Transport Mechanisms in Quasi-Vertical GaN–on–Si Schottky Barrier Diodes (sbds) at Low and High Reverse Biases and Varied Temperatures

Jiabo Chen,Zhihong Liu,Haiyong Wang,Xiufeng Song,Zhaoke Bian,Xiaoling Duan,Shenglei Zhao,Jing Ning,Jincheng Zhang,Yue Hao

DOI: https://doi.org/10.35848/1882-0786/ac2260

IF: 2.819

2021-01-01

Applied Physics Express

Abstract:Temperature-dependent current–voltage characteristics was measured to investigate leakage conduction mechanisms in GaN-on-Si quasi-vertical Schottky barrier diode. At low reverse bias, thermionic emission is dominated. At voltage range from −1 to −20 V, variable range hopping (VRH) is main leakage current mechanism at low temperatures (298–373 K), while at high temperatures (498–573 K), electrons gain enough energy and emit into the trapped states, Frenkel–Poole emission becomes dominant. At a relatively high voltage range, the increased electric field promotes the electron hopping along the threading dislocation in the bulk GaN layers, and VRH becomes the main current mechanism at whole measured temperature range (298–573 K).
A Light Spot Scanner Photo-Current Technique to Measure Surface Recombination Velocity of Semiconductor

F Zhang,JL Chen,CX Xu

DOI: https://doi.org/10.1109/icpadm.2000.876380

2000-01-01

Abstract:Depending on the image method and point source approximation method, a physics model was established, and the formula of photo-current versus surface recombination velocity was obtained. Thus, a light spot scanner photo-current (PC) measurement technique is set up to measure the interface properties of a silicon p-n junction. Using this method, the interface characteristics of angle beveled mesa structure high-voltage silicon p-n junction protected by organic materials or inorganic passivation films could be measured. From the experiment results and the normalization results, the surface recombination velocities of a silicon p-n junction under different conditions are obtained, and the results can be used to evaluate its interface property.

Semiconductor measurement technology: A reverse-bias safe operating area transistor tester

A Novel Method For On-Line Junction Temperature Measurement Of Power Modules

On-Line Measurement of Chip Temperature Based on Blocking Leakage Current of the Insulated-Gate Bipolar Transistor Module in the High-Temperature Reverse-Bias Test

Using Nmos Transistors As Switches For Accuracy And Area-Efficiency In Large-Scale Addressable Test Array

Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing

Bidirectional Current 4h‐sic VJFET

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

A Method of Reducing Leakage Current Measurement Error in the Automatic Test System for Semiconductor Devices

Online Junction Temperature Measurement of Power Semiconductor Devices

A GUI Based Automatic Tester with A Novel Heating Method for Power Semiconductor Device Dynamic Measurement

High Single-Event Burnout Resistance 4H-Sic Junction Barrier Schottky Diode

Measuring circuits used in an automatic transistor tester

Understand NBTI Mechanism by Developing Novel Measurement Techniques

A self-biased neutron detector based on an SiC semiconductor for a harsh environment

Analysis Of Sicbjt Rbsoa

700-V <i>p</i>-GaN Gate HEMT with Low-Voltage Third Quadrant Operation Using Area-Efficient Built-in Diode

Theoretical and Experimental Analyses of Safe Operating Area (soa) of 1200-V 4H-Sic Bjt

A nA-Range Area-Efficient Sub-100-ppm/°C Peaking Current Reference Using Forward Body Biasing in 0.11-$μ$m Bulk and 22-nm FD-SOI

Safe Operating Area Design

Determination of the Leakage Current Transport Mechanisms in Quasi-Vertical GaN–on–Si Schottky Barrier Diodes (sbds) at Low and High Reverse Biases and Varied Temperatures

A Light Spot Scanner Photo-Current Technique to Measure Surface Recombination Velocity of Semiconductor