Abstract:Black phosphorus (BP) has received growing attention due to its suitable carrier mobility and switching ratio, tunable direct band gap, and strong in-plane anisotropy. In recent years, the applied research of both bulk and few-layer BP has yielded continuous breakthroughs, while the device applications with stable performance have lagged due to their poor environmental stability. Additionally, fabricating high-quality doped BP by a desirable chemical vapor transport (CVT) method has been challenging. Herein, the CVT approach with a constant temperature was employed to fabricate Sb-doped BP (Sb–BP) and Bi-doped BP (Bi–BP) to enhance the performance of pristine BP. The characterizations, including Raman, transmission electron microscopy, atomic force microscopy, and so forth, were employed to study the phase structure and properties of the as-grown crystals. The results suggest that BP and doped BP belong to an orthorhombic structure and show good crystallinity. Distinct from pristine BP, the light absorption and electrochemical properties of orthorhombic BP were improved by doping. Furthermore, the storage time of Sb–BP exceeds 65 days, while the degradation of pristine BP occurs within 38 days in ambient condition. The degradation rate of Sb–BP was slower than that of pristine BP even in the harsh environment, which indicates that the antioxidation of Sb–BP is outstanding. Hence, doping is a viable method to modify the properties of BP. This work provides useful guidance for preparing other doped BP and BP compounds, broadening the application field of the phosphorus family.

N-type Doping of Black Phosphorus Single Crystal by Tellurium.

Te-Doped Black Phosphorus Field-Effect Transistors

Uniform Tellurium Doping in Black Phosphorus Single Crystals by Chemical Vapor Transport.

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Fabrication of Doped Black Phosphorus Crystal by the Chemical Vapor Transport Method

Black Phosphorus Radio-Frequency Transistors

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

Superior Thermoelectric Performance of Black Phosphorus in Elemental Tellurium

Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

High‐Performance Black Phosphorus Field‐Effect Transistors with Controllable Channel Orientation

Black Phosphorus n-type doping by Cu: a microscopic surface investigation

Optimized Transport Properties in Lithium Doped Black Phosphorus Transistors

Few-Layer Black Phosphorus Carbide Field-Effect Transistor Via Carbon Doping

Surface Charge Transfer Doping and Effective Passivation of Black Phosphorus Field Effect Transistors

Tuning the Carrier Lifetime in Black Phosphorene Through Family Atom Doping.

Field‐Induced N‐doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility

Optical Tuning of the Terahertz Response of Black Phosphorus Quantum Dots: Effects of Weak Carrier Confinement

Adjustable Electronic, Optical and Photocatalytic Properties of Black Phosphorene by Nonmetal Doping

Probing The Electronic States And Impurity Effects In Black Phosphorus Vertical Heterostructures

Dual gate black phosphorus velocity modulated transistor

Black Phosphorus Radio Frequency Electronics at Cryogenic Temperatures