Abstract:Single-crystal SiC has been widely applied for electronic devices. Photocatalysis assisted chemical mechanical polishing (PCMP) is an efficient global flattening technology for finishing SiC, but the atomic level removal mechanism is still under discussion. In this paper, the atomic behavior of removal with hydroxyl free radical (∙OH) aqueous solution was investigated using the ReaxFF molecular dynamics (MD) simulation. The theoretical analysis shows that ∙OH oxidation of SiC can occur spontaneously, and the mechanical behavior would be able to increase the potential energy and reduce the reaction barrier the reactants. The simulation results show that with only chemical oxidation occurs, the SiC surface adsorbed O, H or -OH to produce Si-O*H2, Si-OH2, Si-OH, Si-H2O, Si-H*O*-H2O, Si-H2O*, Si-O*H* and Si-H, etc., no Si atoms were observed to detach from the SiC substrate. Nevertheless, if the mechanical action was applied, some Si and C atoms break off the substrate by forming SiO, SiO2, CO, CO2 or chain, and the other Si or C atoms were detached by the adsorption on the abrasive. In addition, no atoms break away from the substrate in H2O solution. The force Fx in H2O solution is less than that in ∙OH aqueous solution because of the lubrication of H2O solution. Furthermore, it is found that the mechanical action applied, the more -H and -O adsorbed on the SiC surface result in the more Si and C atoms are removed. The experimental results show that SiC wafer could be oxidized by ∙OH under the mechanical action of diamond abrasive particles. This study reveals that the removal of Si and C atoms from the substrate is the result of the combined action of chemical oxidation and mechanical sliding, which is helpful to explain the dynamic process of the oxidation and removal of Si and C atoms on the atomic level in the SiC PCMP. Furthermore, it provides a valuable method reveal the material removal mechanism.

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Role of mechanically-driven distorted microstructure in mechanochemical removal of silicon

Simulation of Chemical Reactions with Methanol and Oxalic Acid on 4H-Sic Surfaces Before and after Nanoabrasion

Atomistic Mechanisms of Si Chemical Mechanical Polishing in Aqueous H2O2: ReaxFF Reactive Molecular Dynamics Simulations

Atomic Insight into Tribochemical Wear Mechanism of Silicon at the Si/SiO2 Interface in Aqueous Environment: Molecular Dynamics Simulations Using ReaxFF Reactive Force Field

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Reactive Molecular Dynamics Simulation of Si Chemical Mechanical Polishing Process

Insights into Interfacial Mechanism of CeO2/Silicon and Atomic-Scale Removal Process During Chemo-Mechanical Grinding of Silicon.

Atomistic understanding of interfacial processing mechanism of silicon in water environment: A ReaxFF molecular dynamics simulation

Atomistic removal mechanisms of nano polishing single-crystal SiC in hydroxyl free radical aqueous solution

Mechanical effect of abrasives on silicon surface in chemo-mechanical grinding

Investigation of Material Removal Mechanism of Silicon Wafer in the Chemical Mechanical Polishing Process Using Molecular Dynamics Simulation Method

Investigation of the chemical action mechanism based on reactive force field in SiC chemical–mechanical polishing process

Investigation of mechanical force acting on the surface modified-substrate layer area during the chemical-mechanical micro-grinding of monocrystalline silicon

Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing

Atomic-scale Study on Particle Movement Mechanism During Silicon Substrate Cleaning Using ReaxFF MD

Atomic Surface of Silicon Wafers Induced by Grafted Silica Nanoparticles and Sodium Carbonate

Nanoindentation and Deformation Behaviors of Silicon Covered with Amorphous SiO2: a Molecular Dynamic Study

Molecular dynamics study of the removal mechanism of SiC in a fixed abrasive polishing in water lubrication

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)