Abstract:In this work, a novel enhancement-mode GaN p-MISFET with a buried back gate (BBG) is proposed to improve the gate-to-channel modulation capability of a high drain current. By using the p-GaN/AlN/AlGaN/AlN double heterostructure, the buried 2DEG channel is tailored and connected to the top metal gate, which acts as a local back gate. Benefiting from the dual-gate structure (i.e., top metal gate and 2DEG BBG), the drain current of the p-MISFET is significantly improved from −2.1 (in the conv. device) to −9.1 mA/mm (in the BBG device). Moreover, the dual-gate design also bodes well for the gate to p-channel control; the subthreshold slope (SS) is substantially reduced from 148 to ~60 mV/dec, and such a low SS can be sustained for more than 3 decades. The back gate effect and the inherent hole compensation mechanism of the dual-gate structure are thoroughly studied by TCAD simulation, revealing their profound impact on enhancing the subthreshold and on-state characteristics in the BBG p-MISFET. Furthermore, the decent device performance of the proposed BBG p-MISFET is projected to the complementary logic inverters by mixed-mode simulation, showcasing excellent voltage transfer characteristics (VTCs) and dynamic switching behavior. The proposed BBG p-MISFET is promising for developing GaN-on-Si monolithically integrated complementary logic and power devices for high efficiency and compact GaN power IC.

TCAD simulation of breakdown-enhanced double channel GaN MISFET with P-buried layer

A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip Complementary Logic Circuits

3-D Simulation Study of a Normally-OFF GaN Lateral Multi-Channel JFET with Optimized Electrical Field Transfer Terminal Structure

823-Ma/mm Drain Current Density and 945-Mw/cm2 Baliga’s Figure-of-Merit Enhancement-Mode GaN MISFETs with a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric

The GaN Trench Gate MOSFET with Floating Islands

The GaN Trench Gate MOSFET with Floating Islands: High Breakdown Voltage and Improved BFOM

A Novel E-Mode GaN P-Misfet with Hole Compensation Effect Achieving High Drain Current and Ultra-Low Subthreshold Slope

A Novel Trench-Gated Vertical GaN Transistor with Dual-Current-Aperture by Electric-Field Engineering for High Breakdown Voltage

Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench

Optimizing Breakdown Voltage and On-State Resistance by Modulating the Barrier Height along 2DEG Channel for Power P-Gan HEMTs

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

Enhanced breakdown voltage of Si-GaN monolithic heterogeneous integrated Cascode FETs by the device structure design

Breakdown Characteristics of GaN DMISFETs Fabricated via Mg, Si and N Triple Ion Implantation

Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure

GaN high electron mobility transistors with localized Mg doping and Drain Metal Extension

Design of Beveled Edge Termination in GaN Vertical P-I-n Diodes: A Simulation Study

Study on the Optimization of Off-State Breakdown Performance of P-Gan HEMTs

Simulation Design of a High-Breakdown-voltage P-Gan-gate GaN HEMT with a Hybrid AlGaN Buffer Layer for Power Electronics Applications

Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage

High Breakdown Voltage GaN-on-insulator Based Heterojunction Field Effect Transistor with a Partial Back Barrier Layer

A Novel Normally-off Laterally Coupled p-GaN Gate HEMT