Abstract:In this paper, the processing parameters of growing GaN epilayer by hydride vapor phase epitaxy are optimized The influences of the low-temperature (LT) nucleation layer growth time, WM precursor ratio and the growth temperature on GaN layer are investigated by the high-resolution X-ray diffraction (HRXRD) signature for the asymmetric and symmetric reflections. The investigation finds that the LT-nucleation layer not only supplies the nucleation centers having good crystal quality, but also promotes the lateral growth of the sequent high temperature (HT) growth. The optimal LT nucleation layer growth time, WEI precursor ratio and the growth temperature can effectively enhance lateral growth to reduce the crystal defects and are favorable to converting the growth mechanism from threedimension to two-dimension in HT growth. The structural and optoelectronic properties of the as-grown GaN layer with a thickness of 15 um at the optimal parameters are studied by scanning electron microcopy, atomic force microscopy (AFM), HRXRD, Raman spectra, and photoluminescence (PL) measurements. X-ray rocking curves show that the full widths at half maximum of (002) and (102) are 317 and 343 arcsec, respectively. The surface roughness (rms: root mean square) is 0.334 nm detected using AFM. These characteristics show that the sample has good lattice quality and smooth surface morphology. In PL spectrum, the near band edge emission is dominated by emission from excitons bound to neutral donors (D X) near 3.478 eV with 11 meV blue-shift and the yellow band emission is very weak. The results indicate that the GaN layer has good crystal quality and excellent optoelectronic properties, but a little biaxial in-plane compressive strain also exists in it due to the lattice and thermal mismatch.

Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Low-temperature growth of high-quality a-plane GaN epitaxial films on lattice-matched LaAlO3 substrates

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth

Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film

Improved Surface Morphology and Crystalline Quality of Semi-Polar (112‾2) AlN Epilayer with Dual Moderate-Temperature-grown AlN Interlayers

Improvement in Structural and Electrical Characteristics of Nonpolar A-Plane Si-doped N-Algan

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Improved surface morphology and crystalline quality of semi-polar ( 11 2 ̅ 2 ) AlN epilayer with dual moderate-temperature-grown AlN interlayers

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

Effects of Buffer Layer on Structural Properties of Nonpolar (11(2)over-bar0)-Plane GaN Film

The role of AlN thickness in MOCVD growth of N-polar GaN

The Influence of V/III Ratio on GaN Grown on Patterned Sapphire Substrate with Low Temperature AlN Buffer Layer by Hydride Vapor Phase Epitaxy

Comparative Analysis of the GaN Nonpolar Plane Morphology by Wet Treatment and Its Effect on Electrical Properties in Trench MOSFET

Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN

Effects of growth temperature for in-situ deposited SiNx interlayer on structural and optical properties of semipolar ( 11 2 ̄ 2 ) AlGaN films

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

Low-temperaturevan Der Waals Epitaxy of GaN Films on Graphene Through AlN Buffer by Plasma-Assisted Molecular Beam Epitaxy

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates