Abstract:A novel GaN trench gate vertical MOSFET (PSGT-MOSFET) with a double-shield structure composed of a separated gate (SG) and a p-type shielding layer (P_shield) is proposed and investigated. The p-type shielding layer (P_shield) is positioned within the drift region, which can suppress the electric field peak at the bottom of the trench during the off state. This helps to prevent premature breakdown of the gate oxide layer. Additionally, the presence of P_shield enables the device to have adaptive voltage withstand characteristics. The separated gate (SG) can convert a portion of gate to- -drain capacitance (Cgd) into drain-to-source capacitance (Cds), significantly reducing the gate-to-drain charge of the device. This improvement in charge distribution helps enhance the switching characteristics of the device. Later, the impact of the position and length of the p-type shielding layer (P_shield) on the breakdown voltage (BV) and specific on-resistance (Ron_sp) was studied. The influence of the position and length of the separated gate (SG) on gate charge (Qgd) and breakdown voltage was also investigated. Through TCAD simulations, the parameters of P_shield and SG were optimized. Compared to conventional GaN TG-MOSFET with the same structural parameters, the gate charge was reduced by 88%. In addition, this paper also discusses the principle of adaptive voltage withstand in PSGT-MOSFET.

Shield Gate Trench MOSFET with Narrow Gate Architecture and Low-k Dielectric Layer

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability

SiC Trench MOSFET with Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss

SiC Trench MOSFET with Reduced Switching Loss and Increased Short-Circuit Capability

Low Switching Loss and Increased Short-Circuit Capability Split-Gate SiC Trench MOSFET with p-type pillar

4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field

SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode

The GaN trench MOSFET with adaptive voltage tolerance achieved through a dual-shielding structure

A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode

Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance

A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique

Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed

A New Shallow Trench and Planar Gate Mosfet Structure Based on Vdmos Technology

An ultralow loss 4H-SiC double trenches MOSFET with integrated heterojunction diodes and split gate

Design of a Dual-Material Gate LDMOS

Silicon Carbide Split-Gate MOSFET with Merged Schottky Barrier Diode and Reduced Switching Loss

Novel Schottky Barrier Mosfet with Dual-Layer Silicide Source/Drain Structure

SiC Fin-Channel MOSFET for Enhanced Gate Shielding Effect

Dynamic Degradation in SiC Trench MOSFET with a Floating P-Shield Revealed with Numerical Simulations