Abstract:Semiconductor quantum dots (QDs) have unique discrete energy levels determined by the particle size and material. Therefore, they have potential applications as novel optical and electronic devices. Among those, colloidal group II-VI semiconductor quantum dots stand out for their facile synthesis and band gaps aligned with the visible light spectrum. However, the electrical characterization studies of an individual quantum dot necessitate the size of nanogap electrodes being equal to the size of the quantum dot, which has conventionally been evaluated using techniques such as scanning tunneling microscopy (STM) and nanogaps fabricated by electromigration. The complexity of device fabrication has restricted research in this area. Here, we present a pioneering approach for the electrical characterization of single-QD: heteroepitaxial-spherical (HS) Au/Pt nanogap electrodes. We fabricated transistors through chemisorption, an anchoring colloidal CdS QD (3.8 nm) between the HS-Au/Pt nanogap electrodes (gap separation: 4.5 nm). The resulting device functions as a quantum-dot single-electron transistor (QD-SET), showing resonant tunneling-an inherent characteristic of the QD. A steep current increase was observed at a negative voltage, apart from the theoretical single-electron tunneling current by Coulomb blockade phenomena, which agreed with the theoretical resonant tunneling current through a discrete energy level of the QD. This underscores the promise of HS-Au/Pt nanogap electrodes in realizing single-QD devices, offering a pathway toward unlocking their full potential.

Identically Sized Co Quantum Dots on Monolayer WS2 Featuring Ohmic Contact

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Morphology Engineering in Monolayer MoS2‐WS2 Lateral Heterostructures

Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS2 and InGaN Quantum Dots

Manipulations of Electronic and Spin States in Co-Quantum Dot/WS2 Heterostructure on a Metal-Dielectric Composite Substrate by Controlling Interfacial Carriers.

A Gate Defined Quantum Dot on the Two-Dimensional Transition Metal Dichalcogenide Semiconductor WSe2

Interfacial bound exciton state in a hybrid structure of monolayer WS2 and InGaN quantum dots

Tunable electronic properties of two-dimensional transition metal dichalcogenide alloys: A first-principles prediction

Gate controlled quantum dots in monolayer WSe2

Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS2 and WS2 Monolayers

Optically Active Quantum Dots in Monolayer WSe$_2$

Individually addressable double quantum dots formed with nanowire polytypes and identified by epitaxial markers

WSe2 Homojunctions and Quantum Dots Created by Patterned Hydrogenation of Epitaxial Graphene Substrates

Molecular-scale Quantum Dots from Carbon Nanotube Heterojunctions.

Charge-transfer Contact to a High-Mobility Monolayer Semiconductor

Stepwise quantized surface states and delayed Landau level hybridization in Co cluster-decorated BiSbTeSe2 topological insulator devices

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

Resonant tunneling in a colloidal CdS semiconductor quantum-dot single-electron transistor based on heteroepitaxial-spherical Au/Pt nanogap electrodes

Charge-transfer contacts for the measurement of correlated states in high-mobility WSe 2

Quantum-Well States in A Double-Well System: an Example of Cu/Co(Ni)/Cu

Atomically Resolved Observation of Continuous Interfaces Between an As-Grown MoS2 Monolayer and a WS2/MoS2 Heterobilayer on SiO2