Abstract:Silicon carbide (SiC), as a representative of the third-generation semiconductor materials, is widely used in some fields which may suffer strong radiation such as in the cases of military affairs, aerospace and reactor. SiC possesses the superior radiation-resistance characteristic. However, SiC under the proton irradiation generate a lot of defects, resulting in degradation of device performance and even complete loss of its function. Therefore, the study on the irradiation damage to SiC under proton irradiation possesses important significance. A large number of studies have shown that for most of electronic devices and different types of incident particles, the degradation of device performance caused by displacement damage is linearly dependent on non-ionizing energy loss (NIEL), so the displacement damage can be evaluated by NIEL. In this work, the Monte Carlo software Geant4 is used to simulate the relationship between NIEL and proton energy, and the variation of NIEL with the depth of the material and the contribution of different types of primary recoil atoms to the total NIEL are also studied. The NIEL simulation results show that the NIEL in SiC material is less than that in Si and Ga semiconductor material under the same proton irradiation, proving that the stability and the radiation-resistance of SiC are stronger. The simulation results of NIEL at different depths show that the most serious damage regions of the material under different energy protons are diverse. Under the irradiation of low energy proton, the most serious region of the displacement damage occurs at the end of the proton range. With the increase of proton energy, the worst damage region of material will gradually move from the end of the proton range to the surface of SiC material. According to the contribution of different types of primary recoil atoms to the total NIEL, when the energy of the incident proton is low, the displacement damage of the proton in the SiC is mainly caused by 28Si and 12C, and the damage caused by 28Si is obviously higher than that by 12C. As the energy of proton increases, the 28Si and 12C are still the main causes of Bragg peak of the NIEL at the end of the proton range, but the number of ions generated by nuclear reactions increases accordingly, and the displacement damage caused by these ions increases in the shallow area of SiC, leading the surface of the material to be the worst damaged region. The combination of the two factors caused the most serious damage region moves from the end of the proton range to the surface of the material with the increase of proton energy. The results of this study are useful for the application of SiC devices to irradiation environment.

Effect of Primary Knocked-on Atoms on Conductivity Compensation in N-type 4H-Sic Irradiated by 1 MeV Electrons, 25 MeV C Ions and 40 MeV Si Ions

Irradiation effect of primary knock-on atoms on conductivity compensation in N-type 4H-SiC Schottky diode under various irradiations

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Pinning Effect on Fermi Level in 4H-Sic Schottky Diode Caused by 40-Mev Si Ions

Analysis of Displacement Damage Induced by Silicon-Ion Irradiation in SiC MOSFETs

Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation

Non-ionization Energy Loss of Proton in Different Regions in SiC

Electron Radiation Effects on the 4H-Sic PiN Diodes Characteristics: an Insight from Point Defects to Electrical Degradation

Characteristics of Displacement Defects in PNP Transistors Caused by Heavy Ion Irradiation

Characterizations on the Doping of Single-Crystal Silicon Carbide

The evolution of defects in n-type 4H-SiC Schottky barrier diode irradiated with swift heavy ion using the Deep Level Transient Spectroscopy

Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-Sic Transistors

Study of irradiation damage in silicon at different scales

High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

Gamma Irradiation and Annealing Effects on 4H-Sic Schottky Barrier Diode

A Comparison Study of Mechanical Change and Chemical Disorder in 4H-Sic Irradiated with Si5+ and He2+ at Room Temperature

Nondestructive Spectroscopic Investigation of N-Type 4H-SiC Defects Irradiated With Low Fluence 16.5 MeV/u Ta Ions

Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons

Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms

Distribution of defect clusters in the primary damage of ion irradiated 3C-SiC