Abstract:With the rapid development of the aviation industry, an increasing number of metal oxide semiconductor field effect transistors (MOSFETs) are being used in aerospace equipment. The total ionizing dose (TID) test has been developed for silicon power devices to evaluate their space usage capabilities. To evaluate the TID tolerance of silicon carbide (SiC) devices, two 1200V SiC MOSFET power devices with planar and trench structures were aged gamma irradiation environment, and the degradation of static properties, such as the transfer characteristics, output characteristics, and breakdown voltage were analyzed. The comparison of TID effects was made between planar and trench MOSFETs under gate bias (i.e., $\mathrm{V}_{\text{gs}} = 18$ V and $\mathrm{V}_{\text{ds}} = 0$ V) and zero bias ( $\mathrm{V}_{\text{gs}} = 0$ V and $\mathrm{V}_{\text{ds}} = 18$ V) conditions. The experimental results show that: (1) The trench MOSFET was more sensitive to TID effects, due to its unique structure and thick gate oxide. (2) The severity of TID effect under gate bias was mainly caused by the electric field within the gate oxide, which exacerbated the TID effect as compared to zero bias. (3) The degradation mechanisms of TID effect with increasing dose is illustrated, and several radiation hardening methods are proposed, including thinning the gate oxide, improving the quality of the gate oxide, and using insulating dielectrics with a wider bandgap instead of SiO2. Therefore, this work will be helpful to the explanation and radiation hardening of 1200V SiC MOSFET power devices under TID effects.

Total Ionizing Dose Effects in 30-V Split-Gate Trench VDMOS

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Ionization Radiation-Induced Reliability Degradation of SiC Power MOSFET

New Insight into Total-Ionizing-Dose Effect-Induced Breakdown Voltage Degradation for SOI LDMOS: Irradiation Charge Field Modulation

Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Degradation Behavior of SiC Trench MOSFETs by Total-Ionizing-dose Irradiation under Gate Voltage Stress

Total Ionizing Dose Effects of 60co Γ-Ray Radiation on Split-Gate SiC MOSFETs

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Total ionizing dose effects of 60Co-γ ray radiation on SiC MOSFETs with different gate oxide thickness

Trade-Off Between TID and SEGR Effects Based on High-Voltage Radiation-Hardened Gate Oxide

Impact of Total Ionizing Dose Effects on the Threshold Voltage Hysteresis of SiC MOSFETs

Comparison of total ionizing dose effects in SiC MOSFETs with double trench versus asymmetric trench

Total Ionizing Effects on Static Characteristics of 1200V SiC MOSFET Power Devices with Planar and Trench Structures

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Total ionizing dose effects of Co-60-& gamma; ray radiation on SiC MOSFETs with different gate oxide thickness

TID-Induced Breakdown Voltage Degradation in Uniform and Linear Variable Doping SOI P-Ldmosfets

Single Event Effects of Low-Voltage N-type and P-type Trench-gate MOSFET Devices

Total Ionizing Dose Hardening of Planar SOI MOSFET through An Optimal Design Combining Embedded Void and H-gate Structures