Abstract:Epitaxial growth of graphene on SiC is a candidate system for the growth of graphene on a scale large enough for technological applications [1]. Growth is achieved by annealing at temperatures above 1200C, causing Si to evaporate from the SiC preferentially to C, with the resulting carbon-rich surface forms a graphitic layer, with the structural and electronic properties extremely sensitive to annealing conditions. Crucially, in this system both the supply of carbon and the conditions under which the graphene films coalesce are temperature dependent and therefore closely coupled [2]. We present data from magnetotransport and low energy electron microscopy (LEEM)measurements for (0001) 4H SiC samples annealed under UHV at various temperatures, showing structural and electronic coherence lengths which are in good agreement. The evolution of coherent electronic transport occurs for samples annealed at higher temperatures as the size of individual graphene domains increases from the tens of nm to micron scale under these conditions (shown in figure 1). Using a lower-temperature anneal followed by an additional higher-temperature treatment, we show that the larger grain size is due to a coalescence mechanism, as opposed to faster propagation of single grains. This suggests a means of partially decoupling the carbon supply from the coalescence process: potentially important for integration with large-scale wafer production. Following lithographic patterning, magnetotransport (MR) data have been taken at various cryogenic temperatures and can be fitted to weak localisation (WL) or weak anti-localisation (WAL) models [3, 4], allowing the various electron scattering rates to be ascertained. Following these fitting procedures, subtraction of the fits from the measured data allows less dominant contributions to magnetotransport to be discerned. For less ordered samples, it is necessary to include an electron-electron interaction term to fit successfully to lowtemperature MR data, while the temperatures at which this becomes necessary agree with a deviation from linear temperature dependence of the scattering rate τφ.

Grain Growth and Interfacial Structures in SiC Fibers

Synthesis, characterization and growth mechanism of SiC fibers

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

The fiber structure evolution and performance changes of SiC–ZrC fibers after 1600 °C heat treatment

Effect of long-time annealing at high temperature on the microstructure and mechanical properties of different types of SiC fibers

Formation of grain boundaries in nanocrystalline SiC ceramics examined by powder diffraction supported by MD simulations

Grain boundary effects on chemical disorders and amorphization-induced swelling in 3C-SiC under high-temperature irradiation: from atomic simulation insight

Study on the Mechanical Property of High‐Performance Silicon Carbide Fiber

PyC interphase growth mechanism and control models of C/SiC composites

Fine study of hierarchical interphase constructed by Ti3SiC2 and carbon nanotubes in SiCf/SiC composites

Microstructural Characteristics and Mechanical Behavior of SiC(CNT)/Al Multiphase Interfacial Micro-Zones Via Molecular Dynamics Simulations

Polycrystalline Nanograin Formation in Uniform-Sized Silicon Carbide Fibers Derived from Aluminum-Containing Polycarbosilane

Grain coalescence and electronic properties of epitaxial graphene

Microstructure characterization and fracture behaviors of Silicon carbide/metallic glass composites with interpenetrating architecture

Structural evolution and mechanical properties of Cansas-III SiC fibers after thermal treatment up to 1700 °C

Morphological Features and Nanostructures Generated During SiC Graphitization Process

Atomic-Scale Characterization of Slip Deformation and Nanometric Machinability of Single-Crystal 6H-SiC

Temperature field regulation and growth mechanism of SiC fiber during microwave synthesis with catalyst assistance

Microstructure Characterization by X-Ray Computed Tomography of C/C-SiC Ceramic Composites Fabricated with Different Carbon Fiber Architectures

Kinetics and mechanisms for the densification and grain growth of the α-alumina fibers isothermally sintered at elevated temperatures

Amorphous interface layer in thin graphite films grown on the carbon face of SiC