Abstract:Multilayered substrates, including thin plates of LiTaO3 (LT) bonded to silicon (Si) or glass wafers either directly or via intermediate layers, were numerically investigated as potential materials for surface acoustic wave (SAW) resonators with high quality (Q)-factor required for the next generation of mobile communication systems. The propagation velocities and electromechanical coupling coefficients of shear horizontally (SH) polarized acoustic waves were estimated as functions of LT orientation and thicknesses of all layers in LT/Si, LT/SiO2/Si, LT/glass, LT/AlN/glass and structures with several pairs of SiO2/AlN layers between LT and the glass wafer. Optimal combinations of cut angle, LT and electrode thicknesses, as well as the number and thicknesses of intermediate layers, required for the construction of resonators with improved performance were observed for each analyzed structure. In the resonators employing LT/Si and LT/SiO2/Si structures with 30°YX - 48°YX LT cuts, high electromechanical coupling k2, reaching 11.6%, can be combined with high velocities up to 4000 m/s, zero TCF at the resonant frequency and Q-factors that are considerably higher than in the LSAW filters using regular LT substrates. To understand the loss mechanisms that limit resonator Q-factors in LT/glass, mechanical displacements that accompany wave propagation in multilayered structures were visualized. Investigation of the nature of acoustic modes and their transformations with number and thicknesses of the layers revealed that the low-velocity glass wafer can be used as a supporting substrate if an intermediate AlN layer or alternating pairs of low- and high-velocity layers, for example SiO2/AlN, are introduced between LT and the glass wafer.

Suppression of Lowest-Order Plate Mode in Wafer-Bonded SAW Devices Using LiTaO3 Thin Plate

Transverse energy confinement and resonance suppression in SAW resonators using low-cut lithium tantalate

Inherent Suppression of Transverse Modes on LiTaO3/AT-Quartz SAW Devices

Combination of Tetragonal Crystals With LiTaO3 Thin Plate for Transverse Resonance Suppression of Surface Acoustic Wave Devices

Suppression of spurious responses near anti-resonance of TC-SAW resonators by selective thinning of SiO2

Behaviors of higher-order modes in I.H.P. SAW devices and discussion of their suppression

High performance SAW resonator with spurious mode suppression using double-layer electrode transverse modulation

Layered LiNbO $_{3}$ /At-Quartz Wideband Devices with Inherent Transverse Mode Suppression

Use of periodically slotted SiO2 in a layered surface acoustic wave structure for transverse mode suppression

Multilayered structures using thin plates of LiTaO3 for acoustic wave resonators with high quality factor

Optimization of Surface Acoustic Wave Resonators on 42°Y-X LiTaO3/SiO2/Poly-Si/Si Substrate for Improved Performance and Transverse Mode Suppression

Optimal cut for leaky SAW on LiTaO3 for high performance resonators and filters

Application of an overlay for spurious suppression of multi-layered surface acoustic wave resonators with double busbar configuration

A 5.5 GHz S3 Mode Plate Acoustic Wave Resonator Using Lithium Tantalate Thin Film

Higher Order Mode Elimination for SAW Resonators Based on LiNbO3/SiO2/poly-Si/Si Substrate by Si Orientation Optimization

Investigation on spurious mode suppression in 3.8-GHz SH-mode SAW resonators based on LiNbO 3 /SiO 2 /Si multilayer structure

S0-like SAW mode resonator on LiNbO3/SiO2/SiC structure

Double Busbar Structure for Transverse Energy Leakage and Resonance Suppression in Surface Acoustic Wave Resonators Using 42°YX-Lithium Tantalate Thin Plate

Analysis and Suppression of Spurious In-Plane Lamé-Like Modes in Lamb Wave Resonators

Suppression of Transverse Modes in 50°YX-LiTaO 3 /SiO 2 /Si POI SAW Resonator with Groove Configuration

SAW velocity reduction and spurious modes suppression on the layer structure