Black Phosphorous for Pseudospintronics.

Changhua Bao,Shuyun Zhou

DOI: https://doi.org/10.1038/s41563-020-0614-y

IF: 41.2

2020-01-01

Nature Materials

Abstract:Black phosphorus is reported to be a bipolar pseudospin semiconductor, exhibiting a net pseudospin polarization with opposite polarization directions for the conduction and valence bands. These properties make it a promising candidate for application in pseudospintronics.

What problem does this paper attempt to address?

Pseudospin-selective Floquet band engineering in black phosphorus

Shaohua Zhou,Changhua Bao,Benshu Fan,Hui Zhou,Qixuan Gao,Haoyuan Zhong,Tianyun Lin,Hang Liu,Pu Yu,Peizhe Tang,Sheng Meng,Wenhui Duan,Shuyun Zhou

DOI: https://doi.org/10.1038/s41586-022-05610-3

IF: 64.8

2023-02-02

Nature

Abstract:Time-periodic light field has emerged as a control knob for manipulating quantum states in solid-state materials 1,2,3 , cold atoms 4 and photonic systems 5 through hybridization with photon-dressed Floquet states 6 in the strong-coupling limit, dubbed Floquet engineering. Such interaction leads to tailored properties of quantum materials 7,8,9,10,11 , for example, modifications of the topological properties of Dirac materials 12,13 and modulation of the optical response 14,15,16 . Despite extensive research interests over the past decade 3,8,17,18,19,20 , there is no experimental evidence of momentum-resolved Floquet band engineering of semiconductors, which is a crucial step to extend Floquet engineering to a wide range of solid-state materials. Here, on the basis of time and angle-resolved photoemission spectroscopy measurements, we report experimental signatures of Floquet band engineering in a model semiconductor, black phosphorus. On near-resonance pumping at a photon energy of 340–440 meV, a strong band renormalization is observed near the band edges. In particular, light-induced dynamical gap opening is resolved at the resonance points, which emerges simultaneously with the Floquet sidebands. Moreover, the band renormalization shows a strong selection rule favouring pump polarization along the armchair direction, suggesting pseudospin selectivity for the Floquetband engineering as enforced by the lattice symmetry. Our work demonstrates pseudospin-selective Floquet band engineering in black phosphorus and provides important guiding principles for Floquet engineering of semiconductors.

multidisciplinary sciences
Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Bo Zheng,Naichao Si,Guoxin Xie,Quan Wang

DOI: https://doi.org/10.1016/j.physleta.2016.12.046

IF: 2.707

2017-01-01

Physics Letters A

Abstract:Black phosphorus has recently appeared as a promising two-dimensional material for applications in high performance nanoelectronics. Its single- and few-atomic layer forms in field-effect transistors have attracted a lot of attention due to the tunable bandgap (0.3-2.0 eV), high carrier mobility (1000 cm(2) V-1 s(-1)) and decent on-off ratios (10(5)). Here, we demonstrate a suspended black phosphorus field effect transistor (BP-FET) and utilize Raman spectroscope to characterize the strain on the effects of Raman phonon. We find that red shifts appear in all the three vibrational modes (A(g)(i), B-2g and A(g)(2) in different degrees. Among them, 14 mode is most sensitive to the tensile strain. We further investigate the electronic properties with a Cascade semi-automatic probe station. The linear relationships in the output curves indicate the contacts between black phosphorus and electrodes are ohmic contacts. The transfer characteristic curves declare the drain current modulation is similar to 7.6 x 10(3) for the hole conduction and similar to 57 for the electron conduction. Mobility of this device is found to be 347.5 cm(2) V-1 s(-1) and 4.9 cm(2) V-1 s(-1) for the hole and electron conduction, respectively. These results provide a theoretical basis for the coordination of high-performance black phosphorus electronic components. (C) 2016 Elsevier B.V. All rights reserved.
Ambipolar Quantum Transport in Few-Layer Black Phosphorus

Gen Long,Denis Maryenko,Sergio Pezzini,Shuigang Xu,Zefei Wu,Tianyi Han,Jiangxiazi Lin,Chun Cheng,Yuan Cai,Uli Zeitler,Ning Wang

DOI: https://doi.org/10.1103/physrevb.96.155448

IF: 3.7

2017-01-01

Physical Review B

Abstract:We have investigated the quantum transport properties of high-mobility electrons and holes in atomically thin black phosphorus ambipolar devices. The two-dimensional hole system exhibits unambiguously the quantum Hall effect in a magnetic field up to 30 T, while the electron system shows clearly developing Hall plateaus at integer Landau level filling factors accompanied by R-xx oscillations, signaling the onset of the quantum Hall effect. By bringing the spin-resolved Landau levels of the electron system to a coincidence, we determine an electron spin susceptibility to be chi(se) = m*g* = 1.1 +/- 0.03, which, combined with the electron mass m* = 0.39m(0), yields a Lande g factor g* = 2.8 +/- 0.2. The enhancement of spin susceptibility in the black phosphorus two-dimensional electron system is around 50% compared with band susceptibility, which agrees well with various two-dimensional charge-carrier systems with weak spin-orbit coupling, suggesting the important role played by the exchange interaction.
Proximity Effect Induced Spin Injection in Phosphorene on Magnetic Insulator

Haoqi Chen,Bin Li,Jinlong Yang

DOI: https://doi.org/10.1021/acsami.7b11454

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:Black phosphorus is a promising candidate for future nanoelectronics with a moderate electronic band gap and a high carrier mobility. Introducing the magnetism into black phosphorus will widely expand its application scope and may present a bright prospect in spintronic nanodevices. Here, we report our first-principles calculations of spin-polarized electronic structure of monolayer black phosphorus (phosphorene) adsorbed on a magnetic europium oxide (EuO) substrate. Effective spin injection into the phosphorene is realized by means of interaction with the nearby EuO(111) surface, i.e., proximity effect, which results in spin-polarized electrons in the 3p orbitals of phosphorene, with the spin polarization at Fermi level beyond 30%, together with an exchange-splitting energy of ∼0.184 eV for conduction-band minimum of the adsorbed phosphorene corresponding to an energy region where only one spin channel is conductive. The energy region of these exchange-splitting and spin-polarized band gaps of the adsorbed phosphorene can be effectively modulated by in-plane strain. Intrinsically high and anisotropic carrier mobilities at the conduction-band minimum of the phosphorene also become spin-polarized mainly due to spin polarization of deformation potentials and are not depressed significantly after the adsorption. These extraordinary properties would endow black phosphorus with great potentials in the future spintronic nanodevices.
First-principles Study of Spintronics Properties in Black Phosphorus Materials

Fulin Ning,Leyuan Gao,Jing Lu,Jia Liu,Jie Ren,Yunliang Yue,Tiege Zhou,Min Wang

DOI: https://doi.org/10.1016/j.micrna.2024.207787

2024-01-01

Micro and Nanostructures

Abstract:This paper presents a study on the electronic structure and spin properties of Transition Metal (TM) series doped Black Phosphorus (BP) using density functional theory (DFT) computations. The results indicate that the doped-Cr atom has the lowest formation energy in the BP system compared to other defects. Intrinsic defects do not induce magnetism in the BP material. However, the six types of TM atoms (Ti, V, Cr, Mn, Fe, and Ni) can lead to localized magnetic states in the system. Furthermore, researches on applying strain to the BP system have found that it will induce spin polarization in Co-doped system when applying 8% strain. Magnetic Couplings investigation demonstrate that Fe–Fe interactions exhibit ferromagnetic behavior in the BP system, with a Curie temperature above the room temperature at the d1 or d4 distance. These findings are significant to gain deeper insights into material spin polarization and magnetic modulation in functional materials and provide valuable references for the future development of spintronics.
Tuning Two-Dimensional Hyperbolic Plasmons in Black Phosphorus

Edo van Veen,Andrei Nemilentsau,Anshuman Kumar,Rafael Roldan,Mikhail I. Katsnelson,Tony Low,Shengjun Yuan

DOI: https://doi.org/10.1103/physrevapplied.12.014011

IF: 4.6

2019-01-01

Physical Review Applied

Abstract:Black phosphorus presents a very anisotropic crystal structure, making it a potential candidate for hyperbolic plasmonics, characterized by a permittivity tensor where one of the principal components is metallic and the other dielectric. Here we demonstrate that atomically thin black phosphorus can be engineered to be a hyperbolic material operating in a broad range of the electromagnetic spectrum from the entire visible spectrum to ultraviolet. With the introduction of an optical gain, a new hyperbolic region emerges in the infrared. The character of this hyperbolic plasmon depends on the interplay between gain and loss along the two crystalline directions.
Emergence of Two-Dimensional Massless Dirac Fermions, Chiral Pseudospins, and Berry's Phase in Potassium Doped Few-Layer Black Phosphorus

Seung Su Baik,Keun Su Kim,Yeonjin Yi,Hyoung Joon Choi

DOI: https://doi.org/10.1021/acs.nanolett.5b04106

2015-12-07

Abstract:Thin flakes of black phosphorus (BP) are a two-dimensional (2D) semiconductor whose energy gap is predicted being sensitive to the number of layers and external perturbations. Very recently, it was found that a simple method of potassium (K) doping on the surface of BP closes its band gap completely, producing a Dirac semimetal state with a linear band dispersion in the armchair direction and a quadratic one in the zigzag direction. Here, based on first-principles density functional calculations, we predict that, beyond the critical K density of the gap closure, 2D massless Dirac Fermions (i.e., Dirac cones) emerge in K-doped few-layer BP, with linear band dispersions in all momentum directions, and the electronic states around Dirac points have chiral pseudospins and Berry's phase. These features are robust with respect to the spin-orbit interaction and may lead to graphene-like electronic transport properties with greater flexibility for potential device applications.

Materials Science
Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

Ahmet Avsar,Jun You Tan,Marcin Kurpas,Martin Gmitra,Kenji Watanabe,Takashi Taniguchi,Jaroslav Fabian,Barbaros Ozyilmaz

DOI: https://doi.org/10.1038/nphys4141

2017-06-07

Abstract:Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron spin. While graphene is very promising for spin communication due to its extraordinary electron mobility, the lack of a band gap restricts its prospects for semiconducting spin devices such as spin diodes and bipolar spin transistors. The recent emergence of 2D semiconductors could help overcome this basic challenge. In this letter we report the first important step towards making 2D semiconductor spin devices. We have fabricated a spin valve based on ultra-thin (5 nm) semiconducting black phosphorus (bP), and established fundamental spin properties of this spin channel material which supports all electrical spin injection, transport, precession and detection up to room temperature (RT). Inserting a few layers of boron nitride between the ferromagnetic electrodes and bP alleviates the notorious conductivity mismatch problem and allows efficient electrical spin injection into an n-type bP. In the non-local spin valve geometry we measure Hanle spin precession and observe spin relaxation times as high as 4 ns, with spin relaxation lengths exceeding 6 um. Our experimental results are in a very good agreement with first-principles calculations and demonstrate that Elliott-Yafet spin relaxation mechanism is dominant. We also demonstrate that spin transport in ultra-thin bP depends strongly on the charge carrier concentration, and can be manipulated by the electric field effect.

Mesoscale and Nanoscale Physics,Other Condensed Matter
Electrically-tunable spin polarization in boron-doped armchair black phosphorene nanoribbon

Shidong Zhang,Xiaojiao Zhang,Yun-Peng Wang,Bowen Zeng,Mengqiu Long

DOI: https://doi.org/10.1016/j.jmmm.2020.167525

IF: 3.097

2021-03-01

Journal of Magnetism and Magnetic Materials

Abstract:<p>In two dimensional (2D) black phosphorene (BP), most of impurity atoms can introduce the highly local states near the Fermi level, but not necessarily bring spin polarization. The scientific community believes that one of the reasons may be that these impurity states are not partially filled by electrons. In this work, by first principle calculation, the coupling effects of the impurity atoms and the transverse electric field have been considered, our results indicate that the electric field can induce the spin polarization of the impurity states and convert the system from a semiconductor to a magnetic metal in the boron-doped armchair black phosphorene nanoribbons. Furthermore, the effect of electron doping has also been calculated, and we find that adding an extra electron to the system can also cause the spin splitting of the impurity subband and bring the transformation of the system from a semiconductor to a half metal and then to a magnetic semiconductor.</p>

materials science, multidisciplinary,physics, condensed matter
Gate-tunable Large Spin Polarization in a Few-Layer Black Phosphorus-Based Spintronic Device

Liwen Zhang,Jun Chen,Xiaohong Zheng,Bin Wang,Lei Zhang,Liantuan Xiao,Suotang Jia

DOI: https://doi.org/10.1039/c9nr03262b

IF: 6.7

2019-01-01

Nanoscale

Abstract:We report a first principles study of the gate tunable spin transport properties in trilayer black phosphorus (BP) placed on a Ni(100) electrode. In the proposed spintronic device, the spin-dependent conductance and the corresponding spin polarization can be largely modulated by the gate voltage. Instead of resorting to the gate tunable spin orbital interaction (SOI) mechanism in the traditional spintronic devices, the control scheme here is achieved by the giant Stark effect induced semiconducting-metallic phase transition of the few-layer BP. It is found that the quantum tunneling effect is gradually reduced as the gate voltage increases. During this process, the conductances of spin up and spin down components increase differently and hence the spin polarization is largely varied from 7% to 77% in parallel configuration (PC) and from 1% to 54% in anti-parallel configuration (APC). More importantly, the maximum magnetoresistance (MR) value can reach as large as 80%. Finally, we find that the non-equilibrium spin-polarized current can also be controlled by the external bias voltage. For instance, a large turn on/off ratio can be realized by the gate voltage (4239 for spin down current and 1809 for spin up current) when the bias voltage is fixed at 0.01 V. Our theoretical findings pave a feasible way for the novel application of few-layer BP in spintronic nanodevices.
Bipolar magnetic semiconductors: a new class of spintronics materials.

Xingxing Li,Xiaojun Wu,Zhenyu Li,Jinlong Yang,J G Hou

DOI: https://doi.org/10.1039/c2nr31743e

IF: 6.7

2012-01-01

Nanoscale

Abstract:Electrical control of spin polarization is very desirable in spintronics, since electric fields can be easily applied locally, in contrast to magnetic fields. Here, we propose a new concept of bipolar magnetic semiconductors (BMS) in which completely spin-polarized currents with reversible spin polarization can be created and controlled simply by applying a gate voltage. This is a result of the unique electronic structure of BMS, where the valence and conduction bands possess opposite spin polarization when approaching the Fermi level. BMS is thus expected to have potential for various applications. Our band structure and spin-polarized electronic transport calculations on semi-hydrogenated single-walled carbon nanotubes confirm the existence of BMS materials and demonstrate the electrical control of spin-polarization in them.
Quantum Transport in Ambipolar Few-layer Black Phosphorus

Gen Long,Denis Maryenko,Sergio Pezzini,Shuigang Xu,Zefei Wu,Tianyi Han,Jiangxiazi Lin,Yuanwei Wang,Liheng An,Chun Cheng,Yuan Cai,Uli Zeitler,Ning Wang

DOI: https://doi.org/10.1103/PhysRevB.96.155448

2017-03-29

Abstract:Few-layer black phosphorus possesses unique electronic properties giving rise to distinct quantum phenomena and thus offers a fertile platform to explore the emergent correlation phenomena in low dimensions. A great progress has been demonstrated in improving the quality of hole-doped few-layer black phosphorus and its quantum transport studies, whereas the same achievements are rather modest for electron-doped few-layer black phosphorus. Here, we report the ambipolar quantum transport in few-layer black phosphorus exhibiting undoubtedly the quantum Hall effect for hole transport and showing clear signatures of the quantum Hall effect for electron transport. By bringing the spin-resolved Landau levels of the electron-doped black phosphorus to the coincidence, we measure the spin susceptibility $\chi_s=m^\ast g^\ast=1.1\pm0.03$. This value is larger than for hole-doped black phosphorus and illustrates an energetically equidistant arrangement of spin-resolved Landau levels. Evidently, the n-type black phosphorus offers a unique platform with equidistant sequence of spin-up and spin-down states for exploring the quantum spintronic.

Mesoscale and Nanoscale Physics
Electronic and magnetic properties of black phosphorus

Bence G. Márkus,Ferenc Simon,Károly Nagy,Titusz Fehér,Stefan Wild,Gonzalo Abellán,Julio C. Chacón-Torres,Andreas Hirsch,Frank Hauke

DOI: https://doi.org/10.1002/pssb.201700232

2018-05-04

Abstract:Black phosphorus has emerged as the next member in the graphene inspired two-dimensional materials family. Its electronic and magnetic properties are studied herein using electron and nuclear magnetic resonance techniques (ESR and NMR) and microwave conductivity measurement. The latter is a unique technique to study conductivity on air sensitive samples. The ESR study indicates the absence of free charge carriers and no sign of paramagnetic defects are found. $^{31}$P NMR shows the presence of a characteristic Pake doublet structure due to the interaction between $I = 1/2$ nuclei. Microwave conductivity shows, in accordance with the ESR results, that black phosphorus behaves as a semiconductor and we identify extrinsic and intrinsic charge carrier contributions to the conductivity and extracted the sizes of the gaps. ESR measurement also yields that bP might find applications as a microwave absorbent.

Strongly Correlated Electrons
Observation of tunable bandgap and anisotropic Dirac semimetal state in black phosphorus

Jimin Kim,Seung Su Baik,Sae Hee Ryu,Yeongsup Sohn,Soohyung Park,Byeong-Gyu Park,Jonathan Denlinger,Yeonjin Yi,Hyoung Joon Choi,Keun Su Kim

DOI: https://doi.org/10.1126/science.aaa6486

2015-08-23

Abstract:Black phosphorus consists of stacked layers of phosphorene, a two-dimensional semiconductor with promising device characteristics. We report the realization of a widely tunable bandgap in few-layer black phosphorus doped with potassium using an in-situ surface doping technique. Through band-structure measurements and calculations, we demonstrate that a vertical electric field from dopants modulates the bandgap owing to the giant Stark effect and tunes the material from a moderate-gap semiconductor to a band-inverted semimetal. At the critical field of this band inversion, the material becomes a Dirac semimetal with anisotropic dispersion, linear in armchair and quadratic in zigzag directions. The tunable band structure of black phosphorus may allow great flexibility in design and optimization of electronic and optoelectronic devices.

Materials Science,Mesoscale and Nanoscale Physics
Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics

Fengnian Xia,Han Wang,Yichen Jia

DOI: https://doi.org/10.48550/arXiv.1402.0270

2014-02-03

Mesoscale and Nanoscale Physics

Abstract:Anisotropy refers to the property of a material exhibiting directionally dependent features. In this paper, we introduce black phosphorous (BP), the most stable allotrope of phosphorus in layered orthorhombic structure with a bandgap of 0.3 eV in bulk, as a unique 2D material in which electrons, phonons and their interactions with photons behave in a highly anisotropic manner within the plane of the layers. The unique anisotropic nature of BP thin films is revealed using angle-resolved Raman and infrared spectroscopies, together with angle-resolved transport study. For 15 nm thick BP, we measure Hall mobility of 1000 and 600 cm^2/Vs for holes along the light (x) and heavy (y) effective mass directions, respectively, at 120 K. These BP thin films also exhibit large and anisotropic in-plane optical conductivity from 2 to 5 micrometer wavelength. Field effect transistors using 4 to 30 layers of BP (2 to 15 nm) as channel material exhibit an on-off current ratio exceeding 10^5, a field-effect mobility of 205 cm^2/Vs, and good saturation properties all at room temperature, suggesting its promising future in high performance thin film electronics. By introducing narrow bandgap BP into the 2D material family, we fill the space between semi-metallic graphene and large bandgap TMDCs, where great potentials for infrared optoelectronics lie. Most importantly, the unique anisotropic nature of this intriguing material creates unprecedented possibilities for the realization of conceptually new optoelectronic and electronic devices in which angle-dependent physical properties are highly desirable.
The electrical, thermal, and thermoelectric properties of black phosphorus

Yanli Zhang,Jiahong Wang,Qian Liu,Shuang Gu,Zhengbo Sun,Paul K. Chu,Xuefeng Yu

DOI: https://doi.org/10.1063/5.0027244

IF: 6.6351

2020-12-01

APL Materials

Abstract:Black phosphorus (BP) as a two-dimensional semiconductor has attracted tremendous interest in physics, chemistry, biology, and engineering fields. BP has a thickness-dependent bandgap and high carrier mobility, and its puckered honeycomb layer structure with in-plane anisotropy gives rise to unique electrical, thermal, optical, and other properties. These interesting properties provide new opportunities for the design of new devices. The prominent electrical and thermal properties of BP are orthogonal, and the Seebeck coefficients of BP, especially monolayer BP, are large, thus rendering the materials to be desirable in thermoelectric devices. In this Perspective, the recent developments of electrical, thermal, and thermoelectric properties of BP are described. The strategies to tailor the thermoelectric performance are highlighted, aiming at further development and applications in highly efficient thermoelectric devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Pressure-Induced Electronic Transition in Black Phosphorus

Z. J. Xiang,G. J. Ye,C. Shang,B. Lei,N. Z. Wang,K. S. Yang,D. Y. Liu,F. B. Meng,X. G. Luo,L. J. Zou,Z. Sun,Y. Zhang,X. H. Chen

DOI: https://doi.org/10.1103/physrevlett.115.186403

IF: 8.6

2015-01-01

Physical Review Letters

Abstract:In a semimetal, both electrons and holes contribute to the density of states at the Fermi level. The small band overlaps and multiband effects engender novel electronic properties. We show that a moderate hydrostatic pressure effectively suppresses the band gap in the elemental semiconductor black phosphorus. An electronic topological transition takes place at approximately 1.2 GPa, above which black phosphorus evolves into a semimetal state that is characterized by a colossal positive magnetoresistance and a nonlinear field dependence of Hall resistivity. The Shubnikov-de Haas oscillations detected in magnetic field reveal the complex Fermi surface topology of the semimetallic phase. In particular, we find a nontrivial Berry phase in one Fermi surface that emerges in the semimetal state, as evidence of a Dirac-like dispersion. The observed semimetallic behavior greatly enriches the material property of black phosphorus and sets the stage for the exploration of novel electronic states in this material.
Isotropic Charge Screening of Anisotropic Black Phosphorus Revealed by Potassium Adatoms

Zhen Tian,Yu Gan,Taiming Zhang,Binbin Wang,Hengxing Ji,Yexin Feng,Jiamin Xue

DOI: https://doi.org/10.1103/physrevb.100.085440

IF: 3.7

2019-01-01

Physical Review B

Abstract:Black phosphorus has attracted great research interest due to its numerous applications in electronic devices, optoelectronic devices, energy storage, and so on. Compared with the majority of two-dimensional materials, black phosphorus possesses a unique property-its strong in-plane anisotropy. All the properties reported so far, including its effective mass, electron mobility, light absorption, thermal conductivity, and so on, have shown great anisotropy in the basal plane. This property renders black phosphorus applications not achievable with other two-dimensional materials. In this work, however, we discover a remarkable isotropic behavior in the strongly anisotropic black phosphorus-its electrostatic screening of point charges. We use the tip-induced band bending of a scanning tunneling microscope to map out the Coulomb field of ionized potassium adatoms on black phosphorus and reveal its isotropic charge screening. This discovery is important for understanding electron scattering and transport in black phosphorus.
Gyrotropic Magnetic Effect in Black Phosphorus Irradiated with Bicircular Light

Fangyang Zhan,Xin Jin,Da-Shuai Ma,Jing Fan,Peng Yu,Dong-Hui Xu,Rui Wang

2024-11-05

Abstract:The gyrotropic magnetic effect, manifesting as a gyropropic current under a slowly-varying magnetic field, represents a fundamental property of Bloch electrons on the Fermi surface; however, it has not been observed in experiments. Here, we theoretically propose that Floquet engineering with bicircular light (BCL), which is a superposition of two opposite chiral waves of circularly polarized light with an integer frequency ratio, presents a fascinating strategy to generate and manipulate the gyrotropic magnetic effect in nodal line semimetals. The tailoring spatial symmetry of BCL irradiation can induce a topological transition from a nodal line semimetallic phase to a Weyl semimetallic phase characterized by a minimum number of misaligned Weyl nodes, resulting in the generation of gyrotropic current when a slowly oscillating magnetic field is applied. Moreover, using first-principles calculations, we show that the compressed black phosphorus under irradiation of BCL is an ideal candidate to realize the large gyropropic current with great advantages. Our work not only broadens potential candidate materials for achieving the experimentally accessible gyropropic current, but also provides deeper insights into the interplay between topological phenomena and light manipulation of symmetries.

Materials Science
Semiconducting Black Phosphorus: Synthesis, Transport Properties and Electronic Applications

Han Liu,Yuchen Du,Yexin Deng,Peide D. Ye

DOI: https://doi.org/10.1039/c4cs00257a

2014-11-01

Abstract:Phosphorus is one of the most abundant elements preserved in earth, constructing with a fraction of ~0.1% of the earth crust. In general, phosphorus has several allotropes. The two most commonly seen allotropes, white and red phosphorus, are widely used in explosives and safety matches. In addition, black phosphorus, though rarely mentioned, is a layered semiconductor and have great potentials in optical and electronic applications. Remarkably, this layered material can be reduced to one single atomic layer in the vertical direction owing to the van der Waals structure, known as phosphorene, where the physical properties can be tremendously different from its bulk counterpart. In this review article, we trace back to the 100 years research history on black phosphorus from the synthesis to material properties, and extend the topic from black phosphorus to phosphorene. The physical and transport properties are highlighted, aiming at further applications in electronic and optoelectronics devices.

Materials Science,Mesoscale and Nanoscale Physics

Black Phosphorous for Pseudospintronics.

Pseudospin-selective Floquet band engineering in black phosphorus

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Ambipolar Quantum Transport in Few-Layer Black Phosphorus

Proximity Effect Induced Spin Injection in Phosphorene on Magnetic Insulator

First-principles Study of Spintronics Properties in Black Phosphorus Materials

Tuning Two-Dimensional Hyperbolic Plasmons in Black Phosphorus

Emergence of Two-Dimensional Massless Dirac Fermions, Chiral Pseudospins, and Berry's Phase in Potassium Doped Few-Layer Black Phosphorus

Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

Electrically-tunable spin polarization in boron-doped armchair black phosphorene nanoribbon

Gate-tunable Large Spin Polarization in a Few-Layer Black Phosphorus-Based Spintronic Device

Bipolar magnetic semiconductors: a new class of spintronics materials.

Quantum Transport in Ambipolar Few-layer Black Phosphorus

Electronic and magnetic properties of black phosphorus

Observation of tunable bandgap and anisotropic Dirac semimetal state in black phosphorus

Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics

The electrical, thermal, and thermoelectric properties of black phosphorus

Pressure-Induced Electronic Transition in Black Phosphorus

Isotropic Charge Screening of Anisotropic Black Phosphorus Revealed by Potassium Adatoms

Gyrotropic Magnetic Effect in Black Phosphorus Irradiated with Bicircular Light

Semiconducting Black Phosphorus: Synthesis, Transport Properties and Electronic Applications