Nonvolatile electrical control of spin polarization in the 2D bipolar magnetic semiconductor VSeF
Yuhui Li,Jun Deng,Yan-Fang Zhang,Xin Jin,Wen-Han Dong,Jia-Tao Sun,Jinbo Pan,Shixuan Du
DOI: https://doi.org/10.1038/s41524-023-01005-8
IF: 12.256
2023-04-04
npj Computational Materials
Abstract:Nonvolatile electrical control of spin polarization in two-dimensional (2D) magnetic semiconductors is greatly appealing toward future low-dissipation spintronic nanodevices. Here, we report a 2D material VSeF, which is an intrinsic bipolar magnetic semiconductor (BMS) featured with opposite spin-polarized valence and conduction band edges. We then propose a general nonvolatile strategy to manipulate both spin-polarized orientations in BMS materials by introducing a ferroelectric gate with proper band alignment. The spin-up/spin-down polarization of VSeF is successfully controlled by the electric dipole of ferroelectric bilayer Al 2 Se 3 , verifying the feasibility of the design strategy. The interfacial doping effect from ferroelectric gate also plays a role in enhancing the Curie temperature of the VSeF layer. Two types of spin field effect transistors, namely multiferroic memory and spin filter, are further achieved in VSeF/Al 2 Se 3 and VSeF/Al 2 Se 3 /Al 2 Se 3 multiferroic heterostructures, respectively. This work will stimulate the application of 2D BMS materials in future spintronic nanodevices.
materials science, multidisciplinary,chemistry, physical