Abstract:Spintronics aims to exploit the spin degree of freedom in solid state devices for data storage and information processing technologies. The fundamental spintronic device concepts such as creation, manipulation and detection of spin polarization has been demonstrated in semiconductors and spin transistor structures using both the electrical and optical methods. However, an unsolved challenge in the field is the realization of all electrical methods to control the spin polarization and spin transistor operation at ambient temperature. For this purpose, two-dimensional (2D) crystals offer a unique platform due to their remarkable and contrasting spintronic properties, such as weak spin-orbit coupling (SOC) in graphene and strong SOC in molybdenum disulfide (MoS$_2$). Here we combine graphene and MoS$_2$ in a van der Waals heterostructure to realize the electric control of the spin polarization and spin lifetime, and demonstrated a spin field-effect transistor (spin-FET) at room temperature in a non-local measurement geometry. We observe electrical gate control of the spin valve signal due to pure spin transport and Hanle spin precession signals in the graphene channel in proximity with MoS$_2$ at room temperature. We show that this unprecedented control over the spin polarization and lifetime stems from the gate-tuning of the Schottky barrier at the MoS$_2$/graphene interface and MoS$_2$ channel conductivity leading to spin interaction with high SOC material. The all-electrical creation, transport and control of the spin polarization in a spin-FET device at room temperature is a substantial step in the field of spintronics. It opens a new platform for the interplay of spin, charge and orbital degrees of freedom for testing a plethora of exotic physical phenomena, which can be key building blocks in future device architectures.

Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

Gate-tunable Large Spin Polarization in a Few-Layer Black Phosphorus-Based Spintronic Device

Organic Spin-Valves: Physics and Applications

Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Dual gate black phosphorus velocity modulated transistor

Enhanced Spin Injection Efficiency and Extended Spin Lifetimes in Graphene Spin Valves

Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives

Electrical gate control of spin current in van der Waals heterostructures at room temperature

An all phosphorene lattice nanometric spin valve

Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures

Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves

Spin Transistor Built on 2D Van Der Waals Heterostructures

All-Electrical Spin Field Effect Transistor in van der Waals Heterostructures at Room Temperature

Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature

Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts

Field-Effect Birefringent Spin Lens in Ultrathin Film of Magnetically Doped Topological Insulators

A seamless graphene spin valve based on proximity to van der Waals magnet Cr$_2$Ge$_2$Te$_6$

Quantum Hall Effect in Black Phosphorus Two-dimensional Electron Gas

Gate controllable spin transistor with semiconducting tunneling barrier