Abstract:Two-dimensional (2D) piezoelectricity has been extensively addressed in recent years, which leads to great potential applications in advanced smart devices. However, the vertical piezoelectric response of numerous 2D layered materials is theoretically absent when applying electric field or strain perpendicular to its surface because of the inversion symmetry. Recently, vertical piezoelectric properties of In2Se3, which exhibits a low piezoelectric response, were reported. Therefore, enhancing the piezoelectric performance in 2D layered materials is still challenging. Here, we report a remarkable out-of-plane piezoelectric performance in the In2Se3/MoS2 van der Waals (vdW) heterostructure. Such a vdW heterostructure shows a high positive value of piezoelectric coefficient d33. By combining the experimental studies and density functional theory calculations, the excellent piezoelectric properties result from the type II band alignment, which causes a larger interfacial dipole moment. Moreover, the high-precision piezoelectric actuators in 2D atomic scale are demonstrated. By changing the driven voltage, the deformation of the upper surface of piezoelectric actuators linearly modulated. Our study opens the door to design next-generation nanoelectronics and multifunctional coupling atomic-scale devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsanm.0c02513?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsanm.0c02513</a>.Optical microscope, atomic force microscope, Raman spectra, PFM amplitude image, thickness dependence on piezoelectric coefficient, CVD-grown monolayer MoS2 and WS2, UPS spectra of vdW heterostructure (<a class="ext-link" href="/doi/suppl/10.1021/acsanm.0c02513/suppl_file/an0c02513_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Enhanced Piezoelectric Effect Derived from Grain Boundary in MoS2 Monolayers

Enhanced Piezoelectric Effect in MoS2 and Surface-Engineered GaN Bilayer

Observation of Piezoelectricity in Monolayer Molybdenum Disulfide

Enhanced piezoelectricity and electronic band structure transition assisted by atomic shift in MoS2 monolayer

Piezo-photovoltaic Effect in Monolayer 2H-MoS2

Significant Enhancement of Piezoelectricity Induced by Oxygen Adsorption in Monolayer and Multilayer MoS2

Enhanced Piezoelectric Response of Layered In 2 Se 3 /MoS 2 Nanosheet-Based van der Waals Heterostructures

Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2

Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics

Large Out-of-plane Piezoelectricity of Oxygen Functionalized MXenes for Ultrathin Piezoelectric Cantilevers and Diaphragms

Piezophototronic Effect in Single-Atomic-Layer MoS 2 for Strain-Gated Flexible Optoelectronics.

Growth of Wide-Bandgap Monolayer Molybdenum Disulfide for a Highly Sensitive Micro-Displacement Sensor

Piezoelectricity in monolayer MXene for nanogenerators and piezotronics

Observation of Piezoelectricity in Free-Standing Monolayer MoS2

Large Out-of-plane Piezoelectric Response and Ultra-Low Polarization Transition Barriers in Two-Dimensional MoGe2N4/MoSi2N4 Heterostructures

Strain-Engineered Ferroelectricity in 2H Bilayer MoS 2

Theoretical Study on Two-Dimensional MoS2 Piezoelectric Nanogenerators

Giant bulk piezophotovoltaic effect in 3R-MoS2

Out-of-Plane Electromechanical Response of Monolayer Molybdenum Disulfide Measured by Piezoresponse Force Microscopy

Piezoelectric electrostatic superlattices in monolayer

Two-Dimensional Van Der Waals Materials with Aligned In-Plane Polarization and Large Piezoelectric Effect for Self-Powered Piezoelectric Sensors.