Abstract:Chemical vapor deposition has been most recently employed to fabricate centimeter-scale high-quality single-layer MoSi2N4 (Science; 2020;369; 670). Motivated by this exciting experimental advance, herein we conduct extensive first-principles based simulations to explore the stability, mechanical properties, lattice thermal conductivity, piezoelectric and flexoelectric response, and photocatalytic and electronic features of MA2Z4 (M = Cr, Mo, W; A = Si, Ge; Z = N, P) monolayers. The considered nanosheets are found to exhibit dynamical stability and remarkably high mechanical properties. Moreover, they show diverse electronic properties from antiferromagnetic metal to half metal and to semiconductors with band gaps ranging from 0.31 to 2.57 eV. Among the studied nanosheets, the MoSi2N4 and WSi2N4 monolayers yield appropriate band edge positions, high electron and hole mobilities, and strong visible light absorption, highly promising for applications in optoelectronics and photocatalytic water splitting. The MoSi2N4 and WSi2N4 monolayers are also predicted to show outstandingly high lattice thermal conductivity of 440 and 500 W/mK, respectively. For the first time we show that machine learning interatomic potentials trained over small supercells can be employed to examine the flexoelectric and piezoelectric properties of complex structures. As the most exciting finding, WSi2N4, CrSi2N4 and MoSi2N4 are found to exhibit the highest piezoelectric coefficients, outperforming all other-known 2D materials. Our results highlight that MA2Z4 nanosheets not only undoubtedly outperform the transition metal dichalcogenides family but also can compete with graphene for applications in nanoelectronics, optoelectronic, energy storage/conversion and thermal management systems.

Piezoelectric electrostatic superlattices in monolayer

Piezoelectric Electrostatic Superlattices in Monolayer MoS$_2$

Enhanced piezoelectricity and electronic band structure transition assisted by atomic shift in MoS2 monolayer

Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2

Giant Piezoelectricity in Antiferromagnetic CrS2 and CrSe2 Monolayers

Electrically Controlled Reversible Strain Modulation in MoS$_2$ Field-effect Transistors via an Electro-mechanically Coupled Piezoelectric Thin Film

Giant Piezoelectricity in Antiferromagnetic CrS₂ and CrSe₂ Monolayers

Ferroelectricity in untwisted heterobilayers of transition metal dichalcogenides

Observation of Piezoelectricity in Monolayer Molybdenum Disulfide

Electrically Controlled High Sensitivity Strain Modulation in MoS2 Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates

First-principles calculation of in-plane and out-of-plane piezoelectric properties of two-dimensional Janus MoSSiX 2 (X = N, P, As) monolayers

Electrically tunable magnetism and unique intralayer charge transfer in Janus monolayer MnSSe for spintronics applications

Piezo-photovoltaic Effect in Monolayer 2H-MoS2

Electronic structure, magnetoexcitons and valley polarized electron gas in 2D crystals

Exploring the Valleytronic, Optical, and Piezoelectric Properties of Janus MoBXY2 (X = N, P; Y = S, Se, Te) Monolayers for Multifunctional Applications

Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles

Enhanced Piezoelectric Effect Derived from Grain Boundary in MoS2 Monolayers

Piezophototronic Effect in Single-Atomic-Layer MoS 2 for Strain-Gated Flexible Optoelectronics.

Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors

Enhanced Piezoelectric Response of Layered In 2 Se 3 /MoS 2 Nanosheet-Based van der Waals Heterostructures

Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics