Piezoelectric altermagnetism and spin-valley polarization in Janus monolayer $\mathrm{Cr_2SO}$

San-Dong Guo,Xiao-Shu Guo,Kai Cheng,Ke Wang,Yee Sin Ang

2023-06-07

Abstract:The altermagnetism can achieve spin-split bands in collinear symmetry-compensated antiferromagnets. Here, we predict altermagnetic order in Janus monolayer $\mathrm{Cr_2SO}$ with eliminated inversion symmetry, which can realize the combination of piezoelectricity and altermagnetism in a two-dimensional material, namely 2D piezoelectric altermagnetism. It is found that $\mathrm{Cr_2SO}$ is an altermagnetic semiconductor, and the spin-split bands of both valence and conduction bands are near the Fermi level. The $\mathrm{Cr_2SO}$ has large out-of-plane piezoelectricity ($|d_{31}|$$=$0.97 pm/V), which is highly desirable for ultrathin piezoelectric device application. Due to spin-valley locking, both spin and valley can be polarized by simply breaking the corresponding crystal symmetry with uniaxial strain. Our findings provide a platform to integrate spin, piezoelectricity and valley in a single material, which is useful for multi-functional device applications.

Materials Science

What problem does this paper attempt to address?

The paper primarily explores the properties of a two-dimensional (2D) Janus monolayer material named Cr2SO. Specifically, the study aims to address the following key issues:

1. **Discovery of new 2D altermagnetic materials**: The authors predict that the Cr2SO monolayer material possesses altermagnetic properties, and after eliminating spatial inversion symmetry, this material can achieve a combination of piezoelectricity and altermagnetism (Piezoelectric Altermagnetism, PAM).

2. **Demonstration of the coexistence of piezoelectricity and altermagnetism**: Cr2SO not only exhibits altermagnetic behavior but also has a large vertical piezoelectric coefficient (|d31| = 0.97 pm/V), which is significant for the application of ultra-thin piezoelectric devices.

3. **Exploration of methods to achieve spin-valley polarization through strain**: Due to the spin-valley locking effect, spin and valley polarization can be achieved by simply breaking the corresponding crystal symmetry with uniaxial strain.

4. **Verification of the material's stability**: The feasibility of Cr2SO is confirmed through computational analysis of its dynamical, thermodynamic, and mechanical stability.

5. **Proposal of potential applications for multifunctional devices**: Cr2SO provides a platform for integrating spin, piezoelectricity, and valley degrees of freedom in a single material, which is useful for the application of multifunctional devices.

In summary, the goal of this study is to explore a novel 2D material—Cr2SO monolayer, in which piezoelectricity and altermagnetism are simultaneously realized. It also demonstrates the possibility of tuning spin and valley polarization through external strain, providing new ideas for the design of future electronic and spintronic devices.