Abstract:The realization of multifunctional two-dimensional (2D) materials is fundamentally intriguing, such as combination of piezoelectricity with topological insulating phase or ferromagnetism. In this work, a Janus monolayer $\mathrm{SrAlGaSe_4}$ is built from 2D $\mathrm{MA_2Z_4}$ family with dynamic, mechanical and thermal stabilities, which is piezoelectric due to lacking inversion symmetry. The unstrained $\mathrm{SrAlGaSe_4}$ monolayer is a narrow gap normal insulator (NI) with spin orbital coupling (SOC). However, the NI to topological insulator (TI) phase transition can be induced by the biaxial strain, and a piezoelectric quantum spin Hall insulator (PQSHI) can be achieved. More excitingly, the phase transformation point is only about 1.01 tensile strain, and nontrivial band topology can hold until considered 1.16 tensile strain. Moreover, a Rashba spin splitting in the conduction bands can exit in PQSHI due to the absence of a horizontal mirror symmetry and the presence of SOC. For monolayer $\mathrm{SrAlGaSe_4}$, both in-plane and much weak out-of-plane piezoelectric polarizations can be induced with a uniaxial strain applied. The calculated piezoelectric strain coefficients $d_{11}$ and $d_{31}$ of monolayer $\mathrm{SrAlGaSe_4}$ are -1.865 pm/V and -0.068 pm/V at 1.06 tensile strain as a representative TI. In fact, many PQSHIs can be realized from 2D $\mathrm{MA_2Z_4}$ family. To confirm that, similar to $\mathrm{SrAlGaSe_4}$, the coexistence of piezoelectricity and topological orders can be realized by strain (about 1.04 tensile strain) in the $\mathrm{CaAlGaSe_4}$ monolayer. Our works suggest that Janus monolayer $\mathrm{SrAlGaSe_4}$ is a pure 2D system for PQSHI, enabling future studies exploring the interplay between piezoelectricity and topological orders, which can lead to novel applications in electronics and spintronics.

A piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer SrAlGaSe 4

Piezoelectric quantum spin Hall insulator with Rashba spin splitting in Janus monolayer $\mathrm{SrAlGaSe_4}$

Piezoelectric altermagnetism and spin-valley polarization in Janus monolayer Cr2SO

Two-Dimensional Topological Insulator Al 2 SbBi with a Double-Layer Honeycomb Structure with Large Spin Splitting and Piezoelectricity for Spintronic Devices

Piezoelectric altermagnetism and spin-valley polarization in Janus monolayer $\mathrm{Cr_2SO}$

Surface Alloy Engineering in 2D Trigonal Lattice: Giant Rashba Spin Splitting and Two Large Topological Gaps

Two-dimensional Rashba semiconductors and inversion-asymmetric topological insulators in monolayer Janus MAA'ZxZ'(4-x) family

Induced out-of-plane piezoelectricity and giant Rashba spin splitting in Janus WSi Z 3H ( Z = N, P, As) monolayers toward next-generation electronic devices

Large spin splitting and piezoelectricity in a two-dimensional topological insulator Al$_2$SbBi with double-layer honeycomb structure

Symmetry-breaking induced large piezoelectricity in Janus tellurene materials.

Unidirectional Rashba Spin Splitting in Single Layer WS$_{2(1-x)}$Se$_{2x}$ alloy

Rashba spin-splitting and spin Hall effect in Janus monolayers Sb2XSX’ (X, X’= S, Se, or Te; X ≠ X’)

Tunable Topological Phase Transitions in a Piezoelectric Janus Monolayer

Two-Dimensional Janus Antimony Selenium Telluride with Large Rashba Spin Splitting and High Electron Mobility

Quantum Spin-Quantum Anomalous Hall Insulators And Topological Transitions In Functionalized Sb(111) Monolayers

Quantum Spin–quantum Anomalous Hall Effect with Tunable Edge States in Sb Monolayer-Based Heterostructures

Spin Hall Effect in the Monolayer Janus Compound MoSSe Enhanced by Rashba Spin-Orbit Coupling

Exploring nonlinear Rashba effect and spin Hall conductivity in Janus MXenes W2COX (X = S, Se, Te)

Hexagonal warping effect in the Janus group-VIA binary monolayers with large Rashba spin splitting and piezoelectricity

Emergent Multifunctionality in Two-Dimensional Janus VSBrI Monolayer: A Study of Multiferroicity, Magnetoelectricity, and Piezoelectricity

Multipiezo effect in altermagnetic V2SeTeO monolayer