Abstract:Chemical vapor deposition has been most recently employed to fabricate centimeter-scale high-quality single-layer MoSi2N4 (Science; 2020;369; 670). Motivated by this exciting experimental advance, herein we conduct extensive first-principles based simulations to explore the stability, mechanical properties, lattice thermal conductivity, piezoelectric and flexoelectric response, and photocatalytic and electronic features of MA2Z4 (M = Cr, Mo, W; A = Si, Ge; Z = N, P) monolayers. The considered nanosheets are found to exhibit dynamical stability and remarkably high mechanical properties. Moreover, they show diverse electronic properties from antiferromagnetic metal to half metal and to semiconductors with band gaps ranging from 0.31 to 2.57 eV. Among the studied nanosheets, the MoSi2N4 and WSi2N4 monolayers yield appropriate band edge positions, high electron and hole mobilities, and strong visible light absorption, highly promising for applications in optoelectronics and photocatalytic water splitting. The MoSi2N4 and WSi2N4 monolayers are also predicted to show outstandingly high lattice thermal conductivity of 440 and 500 W/mK, respectively. For the first time we show that machine learning interatomic potentials trained over small supercells can be employed to examine the flexoelectric and piezoelectric properties of complex structures. As the most exciting finding, WSi2N4, CrSi2N4 and MoSi2N4 are found to exhibit the highest piezoelectric coefficients, outperforming all other-known 2D materials. Our results highlight that MA2Z4 nanosheets not only undoubtedly outperform the transition metal dichalcogenides family but also can compete with graphene for applications in nanoelectronics, optoelectronic, energy storage/conversion and thermal management systems.

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A first-principles prediction of novel Janus ZrGeZ3H (Z = N, P, and As) monolayers: Raman active modes, piezoelectric responses, electronic properties, and carrier mobility

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Hexagonal warping effect in the Janus group-VIA binary monolayers with large Rashba spin splitting and piezoelectricity

Symmetry-breaking induced large piezoelectricity in Janus tellurene materials.

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Coexistence of In- and Out-of-plane Piezoelectricity in Janus XSSiN2 (X = Cr, Mo, W) Monolayers

Piezoelectricity of Janus group-III monochalcogenide monolayers, multilayers and their vdW heterostructures: insight from first-principles calculations

First-principles calculation of in-plane and out-of-plane piezoelectric properties of two-dimensional Janus MoSSiX 2 (X = N, P, As) monolayers

Large In-Plane Piezoelectricity of 2D Janus Znbri: Multiscale Prediction

Large Tunable Rashba Spin Splitting and Piezoelectric Response in Janus Chromium Dichalcogenide Monolayers

Two-dimensional Janus MGeSiP4 (M = Ti, Zr, and Hf) with an indirect band gap and high carrier mobilities: first-principles calculations

Anisotropy in colossal piezoelectricity, giant Rashba effect and ultrahigh carrier mobility in Janus structures of quintuple Bi2X3(X = S, Se) monolayers

Spin–orbit Splitting and Piezoelectric Properties of Janus Ge2XY (X ≠ Y = P, As, Sb and Bi)

Enhanced piezoelectric effect in Janus group-III chalcogenide monolayers

Piezoelectricity of Janus Sb2Se2Te Monolayers: A First-Principles Study

Current-induced Spin Polarization in Janus WSSe Monolayer

Piezotronic effect on Rashba spin–orbit coupling based on MAPbI 3 /ZnO heterostructures

Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles

Multiferroic Properties and Giant Piezoeletric Effect of 2D Janus WO3F monolayer