Application of Laser Chemical Vapor Deposition in Repairing TFT-LCD Circuit Defects

Zhang Wei,Chen Xiao-ying,Ma Yong-sheng,Fu Wan-xia,Wang Lei,Zhou He,Xu Zhi-jun,Wang Bo,Ruan Yi-song

DOI: https://doi.org/10.3788/yjyxs20193408.0755

2019-01-01

Abstract:The deposition of tungsten film through laser chemical vapor deposition (LCVD) was investigated for the repair of circuit defects of TFT-LCD panels, simultaneously the film-forming process parameters influencing the damage of thin film transistor substrate, electrical resistance of tungsten film were discussed. Firstly, the pulsed laser irradiation at 351 nm was used to deposit tungsten from W(CO)(6) in air atmosphere, and the damage of thin film transistor substrate at diverse film-forming process parameters were observed through focused ion beam-scanning electron microscope (FIB-SEM). Then, the electrical resistances of tungsten films at various film-forming process parameters were tested by high-accuracy Electrical parameter tester (EPM). The control variable method experiments indicate that the larger laser power or bigger size of slit placed in the beam path lead to more serious substrate damage but lower electrical resistivity, and high-power laser radiation without tungsten film deposition can't cause substrate damage; greater laser scan speed result in less substrate damage but higher resistivity by maintaining other effect factors constant. The lower resistivity (0.96 Omega/mu m) and good surface morphology tungsten film is obtained without damage of the thin film transistor substrate at balanced condition, and component analysis shows that W(CO)(6) are complete decomposed.