Abstract:This work proposes a novel way to regulate the electron quantum states of quantum cascade detectors (QCDs) by utilizing localized built-in electric field introduced by modulation doping. The mechanism that how the localized built-in electric field influences extraction efficiency is studied by analyzing the quantum transitions in a simplified three-quantum-well model. The calculation results show that, by introducing the localized built-in electric field, a transition energy close to the LO phonon energy can be more easily realized with almost unchanged transition matrix element. The transition matrix element can be enlarged by the localized built-in electric field with almost unchanged transition energy. The calculated extraction efficiency is below 65% for the standard QCD structures without localized built-in electric field, whereas for the structures with localized built-in electric field, the extraction efficiency can reach above 80%. From experimental results, a higher extraction efficiency of photo-generated electrons of 89% is obtained for the proposed QCD structure, comparing with 63% for the standard QCD structure. The peak response wavelengths of two structures are both around 4.5 μm. At temperatures ranging from 40K to 210K, the photocurrents of the structure with localized built-in electric field are over 55% larger than those of the standard structure. To sum up, the localized built-in electric field can be utilized to regulate the electron states besides the layer thickness and material composition of QCDs.

The Noise Characteristics of MgZnO/ZnO Quantum Cascade Detectors

Noise Characteristics of MgZnO-Based Metal–Semiconductor–Metal Photodetector

Detector-induced Backaction on the Counting Statistics of a Double Quantum Dot.

On the Current Transport Mechanism in Metal–semiconductor–metal Structured CdZnTe Radiation Detectors

The Dark Current Mechanism Of Hgcdte Photovoltaic Detector Passivated By Different Structure

Enhancement on Extraction Efficiency of Quantum Cascade Detectors Utilizing Localized Built-in Electric Field

Calculation of Excitonic Transitions in ZnO/MgZnO Quantum-Well Heterostructures

Study on Quantum Noise of Photodetector

A Quantum Cascade Detector with Enhanced Extraction Efficiency Utilizing Localized Electric Field

Dark Current Mechanism of Terahertz Quantum-Well Photodetectors

Exciton States and Interband Optical Transitions in ZnO/MgZnO Quantum Dots

Very long wave infrared quantum cascade detector based on modular band structure

Investigation of a Noise Source and Its Impact on the Photocurrent Performance of Long-Wave-infrared InAs/GaSb Type-Ii Superlattice Detectors.

High-frequency very long wave infrared quantum cascade detectors

Optical Properties of a -Plane Non-Polar Zn 1− X Mg X O/ZnO Multiple Quantum Wells with Different Barrier Compositions

Room-Temperature Response Performance of Coupled Doped-Well Quantum Cascade Detectors with Array Structure

Dark Current and Noise Analysis for Long-wavelength Infrared HgCdTe Avalanche Photodiodes

Exploiting the Correlation Between 1/f Noise-Dark Current in PIN InGaAs Photodetectors

Performance of the Multiquantum Well Infrared Photodetector

Optimal Doping Density for Quantum-Well Infrared Photodetector Performance

Two-dimensional Electron Gas Related Emissions in ZnMgO/ZnO Heterostructures