Abstract:Hg 1−x Cd x Te alloys are unique because by increasing the Cd content x, one modifies the band structure from inverted to normal, which fundamentally modifies the dispersion of bulk and surface or edge (in the case of quantum wells) energy states. Using alloys with x close to the concentration x c at which the band inversion transition is observed and with additional application of hydrostatic pressure (p), one creates a favorable playground for studying the evolution of Dirac matter and its topological properties. In this work, cryogenic magnetospectroscopy in quantizing magnetic fields (B) at the far-infrared is used to study inter-Landau-level transitions in high-quality Hg 1−x Cd x Te MBE-grown epitaxial layers with x ∼ x c as a function of p up to 4.2 kbar. Special attention is paid to elucidate the role of the substrate and buffer layers, which usually modify the pressure coefficients of epitaxial layers. For this purpose, comparative measurements were carried out on as-grown epilayers with a GaAs substrate and on free-standing layers obtained by etching off the substrate. Spectra registered as a function of B (at given p) were analyzed with the help of the Kane model modified to include magnetic field. The pressure coefficient as well as the difference between conduction and valence band deformation potentials of the free-standing layer were determined at 2 K. Surprisingly, the deformation potentials and pressure coefficients of the epitaxial layer and those of the free-standing layer differed by no more than 10% in the pressure range up to 4.2 kbar. This finding questions the common belief of a dominant influence of the substrate on the pressure coefficients of epitaxial layers. We attribute the smallness of this difference to the presence of a highly disordered CdTe buffer separating the substrate from the epitaxial layer, which relaxes the transmission of strain from the substrate to the layer. Our results contribute to a better understanding of pressure experiments carried out on epitaxial layers on a substrate.

Temperature and Electron Concentration Dependences of 1/f Noise in Hg$_{1-x}$Cd$_x$Te -- Evidence for a Mobility Fluctuations Mechanism

Vibration noise in HgCdTe photoconductive devices

Analysis of Low-Frequency 1/f Noise Characteristics for MoTe2 Ambipolar Field-Effect Transistors

Two-Dimensional Electron Gas at the Metastable Twisted Interfaces of Cdte/Pbte (111) Single Heterojunctions

Mechanisms of Current Fluctuation in High-Mobility p-Type Tellurium Field-Effect Transistors

Optical and Electronic Characterization on HgCdTe Materials

The manifestation of Fermi level oscillations in the magnetoresistance of HgTe quantum wells with a split spectrum

Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content

Antilocalization effect in HgCdTe film

Pressure tuning of HgCdTe epitaxial layers - the role of the highly disordered buffer layer

Terahertz properties of Dirac fermions in HgTe films with optical doping

Monte Carlo simulations of Hg0.7Cd0.3Te avalanche photodiodes and resonance phenomenon in the multiplication noise

Electron-hole scattering-induced temperature behaviour of HgTe-based semimetal quantum well

Contribution of Oscillations of the Fermi Level to the Shubnikov–de Haas and Magneto-Intersubband Oscillations in Single HgTe Quantum Wells

Effects of Temperature Fluctuations on Charge Noise in Quantum Dot Qubits

Pressure tuning of HgCdTe epitaxial layers -- the role of the highly disordered buffer layer

Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates

Temperature Effects on Exciton and Trion States in CdTe Quantum Well Structures

Cr/p-HgCdTe (x = 0.28, 1.0) contact resistance and I-V characteristics in the LTLM configuration

Flux periodic oscillations and phase-coherent transport in GeTe nanowire-based devices

Temperature evolution of quasiparticle dispersion and dynamics in semimetallic 1 T − TiTe 2 via high-resolution angle-resolved photoemission spectroscopy and ultrafast optical pump-probe spectroscopy