Abstract:Thin-film transistors (TFTs) made of solution-processable transparent metal oxide semiconductors show great potential for use in emerging large-scale optoelectronics. However, current solution-processed metal oxide TFTs still suffer from relatively poor device performance, hindering their further advancement. In this work, we create a novel ultrathin crystalline indium–boron–oxide (In-B-O) channel layer for high-performance TFTs. We show that high-quality ultrathin (~10 nm) crystalline In-B-O with an atomically smooth nature (RMS: ~0.15 nm) could be grown from an aqueous solution via facile one-step spin-coating. The impacts of B doping on the physical, chemical and electrical properties of the In2O3 film are systematically investigated. The results show that B has large metal–oxide bond dissociation energy and high Lewis acid strength, which can suppress oxygen vacancy-/hydroxyl-related defects and alleviate dopant-induced carrier scattering, resulting in electrical performance improvement. The optimized In-B-O (10% B) TFTs based on SiO2/Si substrate demonstrate a mobility of ~8 cm2/(V s), an on/off current ratio of ~106 and a subthreshold swing of 0.86 V/dec. Furthermore, by introducing the water-processed high-K ZrO2 dielectric, the fully aqueous solution-grown In-B-O/ZrO2 TFTs exhibit excellent device performance, with a mobility of ~11 cm2/(V s), an on/off current of ~105, a subthreshold swing of 0.19 V/dec, a low operating voltage of 5 V and superior bias stress stability. Our research opens up new avenues for low-cost, large-area green oxide electronic devices with superior performance.

Low-temperature Fabrication of Sr–N Co-Doped In2O3 Thin Film by Aqueous Route and Its Application to High Performance InSrNO Thin Film Transistor

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Enhanced Stability of Sr-Doped Aqueous In2O3 Thin-Film Transistors under Bias/Illumination/Thermal Stress

P‐5.2: Aqueous Sr‐doped In2O3 TFT Stability under Negative Bias Illumination Stress

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors

Tuning Transport Properties Via Rare-Earth Doping and Epitaxial Strain in Sr2IrO4 Thin Films

Fabrication and performance of indium oxide based transparent thin film transistors

Enhancement of Electrical Performance in In2o3 Thin-Film Transistors by Improving the Densification and Surface Morphology of Channel Layers

Effect of Titanium Cation Doping on the Performance of In2O3 Thin Film Transistors Grown via Atomic Layer Deposition

High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al2O3 Nanolaminate Structure Processed at Room Temperature

Simultaneous Enhancement of Electrical Performance and Negative Bias Illumination Stability for Low-Temperature Solution-Processed SnO2 Thin-Film Transistors by Fluorine Incorporation

Effect of In-Situ H Doping on the Electrical Properties of In2O3 Thin-Film Transistors

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Enhanced Electrical Performance and Stability of Solution-Processed Thin-Film Transistors with In2O3/In2O3:Gd Heterojunction Channel Layer

Effect of Atmosphere Dependent Annealing on the Electrical Characteristics of a-In2O3 Thin-film Transistors

One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature

Zirconium-aluminum co-doping on solution-processed indium oxide thin film and deceives measured by a novel nondestructive method

Tunable-performance All-Oxide Structure Field-Effect Transistor Based Atomic Layer Deposited Hf-doped In2O3 Thin Films.

Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor

Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications