Abstract:The applications of thin-film transistors (TFTs) based on oxide semiconductors are limited due to instability under negative bias illumination stress (NBIS). Here, we report TFTs based on solution-processed In2O3 semiconductors doped with Pr4+ or Tb4+, which can effectively improve the NBIS stability. The differences between the Pr4+-doped In2O3 (Pr:In2O3) and Tb4+-doped In2O3 (Tb:In2O3) are investigated in detail. The undoped In2O3 TFTs with different annealing temperatures exhibit poor NBIS stability with serious turn-on voltage shift (ΔVon). After doping with Pr4+/Tb4+, the TFTs show greatly improved NBIS stability. As the annealing temperature increases, the Pr:In2O3 TFTs have poorer NBIS stability (ΔVon are −3.2, −4.8, and −4.8 V for annealing temperature of 300, 350, and 400 °C, respectively), while the Tb:In2O3 TFTs have better NBIS stability (ΔVon are −3.6, −3.6, and −1.2 V for annealing temperature of 300, 350, and 400 °C, respectively). Further studies reveal that the improvement of the NBIS stability of the Pr4+/Tb4+:In2O3 TFTs is attributed to the absorption of the illuminated light by the Pr/Tb4fn—O2p6 to Pr/Tb 4fn+1—O2p5 charge transfer (CT) transition and downconversion of the light to nonradiative transition with a relatively short relaxation time compared to the ionization process of the oxygen vacancies. The higher NBIS stability of Tb:In2O3 TFTs compared to Pr:In2O3 TFTs is ascribed to the smaller ion radius of Tb4+ and the lower energy level of Tb 4f7 with a isotropic half-full configuration compared to that of Pr 4f1, which would make it easier for the Tb4+ to absorb the visible light than the Pr4+.

P‐5.2: Aqueous Sr‐doped In2O3 TFT Stability under Negative Bias Illumination Stress

Enhanced Stability of Sr-Doped Aqueous In2O3 Thin-Film Transistors under Bias/Illumination/Thermal Stress

Low-temperature Fabrication of Sr–N Co-Doped In2O3 Thin Film by Aqueous Route and Its Application to High Performance InSrNO Thin Film Transistor

The Mechanism of the Photostability Enhancement of Thin-Film Transistors Based on Solution-Processed Oxide Semiconductors Doped with Tetravalent Lanthanides

Praseodymium-Doped In-Sn-Zn-O TFTs With Effective Improvement of Negative-Bias Illumination Stress Stability

Improvement in Instability of Transparent ALD ZnO TFTs under Negative Bias Illumination Stress with SiO/AlO Bilayer Dielectric

Effect of Bandgap Widening on Negative-Bias Illumination Stress Stability of Oxide Thin-Film Transistors

Enhanced Negative‐Bias Illumination Temperature Stability of Praseodymium‐Doped InGaO Thin‐Film Transistors

Investigation on Stability in Solution-Processed In-Zn-Sn-O TFT Array under Various Intensity of Illumination

Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric

Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress

Enhanced NBIS Stability of Oxide Thin-Film Transistors by Using Terbium-Incorporated Alumina

P‐6.1: Asymmetric Effects of Gate‐Bias Stress Voltage on the Stability under Positive and Negative Gate‐Bias Stress of A‐igzo TFTs

Enhanced Stability under Positive Bias Temperature Stress of Ln-Doped Inzno Thin Film Transistors Fabricated with a Back-Channel-Etch Structure

Enhanced Electrical Performance and Negative Bias Illumination Stability of Solution-Processed InZnO Thin-Film Transistor by Boron Addition

P‐1.9: Enhanced Stability Under Positive Bias Temperature Stress of Ln‐Doped InZnO Thin Film Transistors Fabricated with Back‐channel‐etch Structure

Comprehensive Study of Improved Negative-Bias-Illumination-Temperature Stress Stability in Terbium-Doped Indium-Zinc-Oxide Thin-Film Transistors

Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors

Simultaneous Enhancement of Electrical Performance and Negative Bias Illumination Stability for Low-Temperature Solution-Processed SnO2 Thin-Film Transistors by Fluorine Incorporation

Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors

Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor