Abstract:Low‐dimensional nanomaterials have attracted attention due to their excellent electrical and optical properties. The development of nonvolatile memory device based on low‐dimensional nanomaterials is important for establishing high‐performance computers. In this work, black phosphorus quantum dots (BPQDs) are physically blended with the fullerene derivative [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM), and then polyvinylpyrrolidone (PVP) is added to enhance the film‐forming properties of the material. The resulting composite thin film is sandwiched between aluminum and indium‐tin oxide (ITO) electrodes to form an Al/BPQDs/PCBM/PVP/ITO device. The device exhibits stable nonvolatile rewritable memory behavior, with on and off threshold voltages of −2.4 and +3.25 V, respectively, and an on/off ratio exceeding 103. In addition, the device exhibits a lower threshold voltage and higher conductivity upon increasing the light intensity under laser irradiation at 450 nm. Light‐induced electron paramagnetic resonance and fluorescence spectroscopy show that the existence of electric field‐induced charge transfer and light‐induced charge transfer in the composite thin film are responsible for the device's photoelectric dual‐response resistive characteristics. In this work, black phosphorus quantum dots (BPQDs) are blended with the fullerene derivative [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM) and non‐optically active polyvinylpyrrolidone (PVP) to form a nanocomposite for the fabrication of thin‐film devices. The fabricated BPQDs/PCBM/PVP composite based electronic device exhibits photoelectric dual‐response memory behaviors with good retention and tolerance.

Nonvolatile Memory Device Based on Copper Polyphthalocyanine Thin Films

Nonvolatile Memory Devices With Cu2s And Cu-Pc Bilayered Films \

A Memory Device Based on Coordinated Polymer Films

Electrochemical Fabrication of A Memory Device Based on Conducting Polymer Nanocomposites

Non‐Volatile Polymer Memory Device Based on a Novel Copolymer of N‐Vinylcarbazole and Eu‐Complexed Vinylbenzoate

An Electrogenerated Chemical-Oxidation-Driving Nonvolatile Plastic Memory Device with the Conjugated Polymer/Carbon Nanotube Blend

Fully Solution‐Processed Transparent Nonvolatile and Volatile Multifunctional Memory Devices from Conductive Polymer and Graphene Oxide

Fabrication Of A Cobalt Phthalocyanine Free-Standing Film On An Ionic Liquid Surface For Memory Device Applications

Hierarchical Hollow-Pore Nanostructure Bilayer Heterojunction Comprising Conjugated Polymers for High Performance Flash Memory.

Transparent and Flexible Nonvolatile Memory Using Poly(methylsilsesquioxane) Dielectric Embedded with Cadmium Selenide Quantum Dots

N, S-codoped Cross-Linked Polymers for Low Switch Voltage and High Thermal Stable Nonvolatile Memory

Nonvolatile Polymer Memory Device Based on Bistable Electrical Switching in A Thin Film of Poly(N-Vinylcarbazole) with Covalently Bonded C-60

Non-volatile Ternary Memristors Based on a Polymer Containing a Carbazole Donor with CuO NPs Embedded

Conjugated Polymer Nanoparticles as Nano Floating Gate Electrets for High Performance Nonvolatile Organic Transistor Memory Devices

Rewritable and non-volatile memory effects based on polyimides containing pendant carbazole and triphenylamine groups

Molecular Floating-Gate Organic Nonvolatile Memory With A Fully Solution Processed Core Architecture

Nonvolatile WORM Memory Devices Based on Polymethacrylate with Azoanthraquinone Group

Resistive Memory Switching of $\hbox{Cu}_{x}\hbox{O}$ Films for a Nonvolatile Memory Application

Memory devices based on functionalized copolymers exhibiting a linear dependence of switch threshold voltage with the pendant nitro-azobenzene moiety content change

Novel polymer resistive memory based on parylene with high compatibility and scalability

Photoelectric Dual Response Nonvolatile Memory Device Based on Black Phosphorus Quantum Dots and Fullerene Derivative Composite