Abstract:The diversification of data types and the explosive increase of data size in the information era continuously required to miniaturize the memory devices with high data storage capability. Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) are promising candidates for flexible and transparent electronic and optoelectronic devices with high integration density. Multistate memory devices based on TMDs could possess high data storage capability with a large integration density and thus exhibit great potential applications in the field of data storage. Here, we report the multistate data storage based on multilayer tungsten diselenide (WSe2) transistors by interface engineering. The multiple resistance states of the WSe2 transistors are achieved by applying different gate voltage pulses, and the switching ratio of the memory can be as large as 105 with high cycling endurance. The water and oxygen molecules (H2O/O2) trapped at the interface between the SiO2 substrate and WSe2 introduce the trap states and thus the large hysteresis of the transfer curves, which leads to the multistate data storage. In addition, the laminated Au thin film electrodes make the contact interface between the electrodes and WSe2 free of dangling bond and Fermi level pinning, thus giving rise to the excellent performance of memory devices. Importantly, the interface trap states can be easily controlled by a simple oxygen plasma treatment of the SiO2 substrate, and subsequently, the performance of the multistate memory devices can be manipulated. Our findings provide a simple and efficient strategy to engineer the interface states for the multistate data storage applications and would motivate more investigations on the trap state-associated applications.

Two-Dimensional WSe 2 /Organic Acceptor Hybrid Nonvolatile Memory Devices Based on Interface Charge Trapping.

Charge-Trap Memory Based on Hybrid 0D Quantum Dot-2D WSe2 Structure

WSe 2 /WS 2 Heterobilayer Nonvolatile Memory Device with Boosted Charge Retention

Nonvolatile Memory Devices Based on Two-Dimensional WSe2/MoS2 Van Der Waals Heterostructure

Optical Readout of Charge Carriers Stored in a 2D Memory Cell of Monolayer WSe2

Memory Window Ratio Enhancement of p-Type WSe 2 Memtransistors Using Dielectric GeSe 2 Nanosheets with Asymmetric Interfaces for Neuromorphic Computing

Memory Window Ratio Enhancement of P-Type WSe2 Memtransistors Using Dielectric GeSe2 Nanosheets with Asymmetric Interfaces for Neuromorphic Computing

Molecularly thin electrolyte for all-solid-state non-volatile two-dimensional crystal memory.

Multistate Memory Enabled by Interface Engineering Based on Multilayer Tungsten Diselenide

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS2 Channels

Controllable memory window in two-dimensional hybrid van der Waals heterostructured devices

Ferroelectric Field-Effect Transistors Based on WSe2/CuInP2S6 Heterostructures for Memory Applications

Ferroelectric Field-Effect Transistors Based on WSe 2 /CuInP 2 S 6 Heterostructures for Memory Applications

Direct Charge Trapping Multilevel Memory with Graphdiyne/MoS2 Van Der Waals Heterostructure.

Highly Reliable Van Der Waals Memory Boosted by a Single 2D Charge Trap Medium.

Nonvolatile charge memory with optical controllability in two-terminal pristine α-In2Se3 nanosheets

Eliminating Overerase Behavior by Designing Energy Band in High-Speed Charge-Trap Memory Based on Wse2

Solution-Processed Wide-Bandgap Organic Semiconductor Nanostructures Arrays for Nonvolatile Organic Field-Effect Transistor Memory.

Ferroelectric Fet for Nonvolatile Memory Application with Two-Dimensional Mose2 Channels

Direct Charge Trapping Multilevel Memory with Graphdiyne/MoS 2 Van der Waals Heterostructure

2D Heterostructures Induced Charge Transfer and Trapping for Hybrid Optically and Electrically Controllable Nonvolatile Memory