Abstract:This study presents a theoretical examination of the electronic band structure of AA (AB) stacked bilayer blue phosphorus system within the fifth intralayer (5NN) and second interlayer nearest-neighbor (2NN) multi-orbital tight-binding (MOTB) approach. The variation of energy levels has been investigated through the symmetrical tensile strain of the low-buckled honeycomb lattice. Here, the primary objective is to examine the existence of Dirac electronic features in hexagonal stacked bilayer geometry. Our theoretical calculations predict that the AA bilayer is a new hexagonal two-dimensional material with px,y-orbital Dirac-like states at the high-symmetry K point. Consequently, these systems can host massless (massive) Dirac fermions. In particular, the AA bilayer exhibits zero-gap Dirac-like properties and manifests distinguishable Dirac-like cones in the presence of weak spin-orbit coupling when a modest stretch of 2.30% is achieved with a remarkably high Fermi velocity of approximately vf ≈ 0.12 × 105 m s−1. The behavior of the dispersion bands aligns reasonably well with recent experimental observations. Moreover, a stretch of 7.17% breaks some of the sublattice equivalence and enhances the spin-orbit interaction, resulting in the emergence of an electronic band gap of approximately ≈ 0.27 eV in the proximity of the high-symmetry K point. Furthermore, the tiny gap induced by the spin-orbit interaction implies topological nontriviality in the electronic state (quantum anomalous Hall state) of the honeycomb lattice. These findings categorize the AA bilayer as a rare two-dimensional Dirac-like material. This work provides, to the extent of our knowledge, a pioneering investigation into the existence of Dirac electronic properties in bilayer blue phosphorus. In addition, we present the first derivation of the MOTB model. However, the identified electronic characteristics designate this two-dimensional system as an ideal candidate for high-performance nanoelectronic devices.

The study of the electron transport characteristics of bilayer blue phosphorus with different stacking by first principles

The Stacking Dependent Electronic Structure And Optical Properties Of Bilayer Black Phosphorus

Controlling quantum spin Hall state via strain in various stacking bilayer phosphorene

Electronic and optical properties of bilayer blue phosphorus

High-mobility transport symmetry and effect of strain on electronic and optical properties in few-layer blue phosphorus

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Insight into the stacking effect on shifted patterns of bilayer phosphorene: a comprehensive first-principles study

Effect of Multilayer Structure, Stacking Order and External Electric Field on the Electrical Properties of Few-Layer Boron-Phosphide.

Electronic structures, transport properties, and optical absorption of bilayer blue phosphorene nanoribbons

Stacking dependence of carrier transport properties in multilayered black phosphorous

Tuning the electronic structures and transport properties of zigzag blue phosphorene nanoribbons

The electronic structure, mechanical flexibility and carrier mobility of black arsenic-phosphorus monolayers: a first principles study.

Two-dimensional bilayer blue phosphorus Dirac-like material: A multi-orbital tight-binding investigation

Twist angle and electric gating controllable electronic structure of two-dimensional stacked BP homo-structure

First principles investigation of pressure related quantum transport in pure black phosphorus devices

The Role of the Height Fluctuation Effect in the Tunable Interfacial Electronic Structure of the Vertically Stacked BP/MoS2 Heterojunction

Probing the Physical Origin of Anisotropic Thermal Transport in Black Phosphorus Nanoribbons.

Achieving indirect-to-direct band gap transition and enhanced photocatalytic performance in blue phosphorene through doping and strain

Band-edge Engineering Via Molecule Intercalation: a New Strategy to Improve Stability of Few-Layer Black Phosphorus

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

Commensurate stacking-induced ultrahigh yet discontinuous bending stiffness of the double-layer black phosphorus