Abstract:Indium tin oxide (ITO) is a promising sensitive material for ultra-high temperature thin-film sensors (UTTSs) applied in thermal and mechanical parameters test in hot section parts. However, the instability of the temperature coefficient of resistance (TCR) in the ITO film is still one of the major limiting factors in accuracy improvement of the UTTSs. In this work, different ITO thin film samples were prepared by RF magnetron sputtering with various N2/Ar ratios changing from 10%–40%, and the effect of nitrogen partial pressure (NPP) on the TCR of ITO films in elevated temperature from 500 °C to 1200 °C was studied. The micromorphology, crystallographic structures and electrical performances of ITO films were examined by scanning electron microscope (SEM), X-ray diffraction (XRD) and Hall effect measurement, respectively. Results show that lower crystallinity and smaller grain of ITO films can be observed with the increase of NPP. In addition, we found that the recrystallization is one of the main factors affecting the TCR repeatability in the thermal cycle test. The grain growth rate (GGR) is only 27.0% in the 20%N2 ITO film after the thermal cycle test from 500 °C to 1200 °C, far lower than that of the 40%N2 ITO film (309.6%). Consequently, the 20%N2 ITO film showed the lowest TCR volatility rates (TVR) after the thermal cycle test, which were respectively recorded as only about 0.5% and 2.1% at 800 °C and 1200 °C. The high TCR stability in the 20%N2 ITO film can be attributed to the formation of the stable phase structure during the thermal cycle test. Furthermore, the 20%N2 ITO film also has the smallest TCR compared with other ITO films.

Effect of Heat Treatment Atmosphere on the Piezoresistivity of Indium Tin Oxide Ceramic Strain Sensor

Effect of Nitrogen Doping Temperature on the Resistance Stability of ITO Thin Films

Annealing Effects on Conductivity and Microwave Dielectric Loss of Mgtio3 Ceramics

Effect of nitrogen partial pressure on the piezoresistivity of magnetron sputtered ITO thin films at high temperatures

Effect of nitrogen partial pressure on the TCR of magnetron sputtered indium tin oxide thin films at high temperatures

Fabrication and piezoresistance of high temperature ITO thin film strain gauge

Stability enhancement of the nitrogen-doped ITO thin films at high temperatures using two-step mixed atmosphere annealing technique

Annealing Effects in ITO Based Ceramic Thin Film Thermocouples

Effect Of Heat-Treatment Under Nitrogen Atmosphere On The Electrical Properties Of Ptc Thermistor

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

PYROELECTRIC AND THERMAL STRAIN EFFECTS OF PIEZOELECTRIC (PVDF AND PZT) DEVICES

High Temperature Thermoelectric Properties of Nitrogen Doped ITO Thin Films

Air-Annealing Effects on Sio2/Ito Coating

Impact of Annealing in Various Atmospheres on Characteristics of Tin-Doped Indium Oxide Layers towards Thermoelectric Applications

Influence of Annealing Temperature on the Microstructure and Electrical Properties of Indium Tin Oxide Thin Films

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

Effects of Heat‐Treatment Temperature on the Properties of (1–x)(na0.5bi0.5)tio3–xbialo3 Lead‐Free Piezoelectric Thin Films

Effect of heat treatment on internal stress in barium titanate nanocube assemblies and their dielectric property

Structural and Electrical Properties of Flexible ITO/In2O3 Thermocouples on PI Substrates under Tensile Stretching

Effect of Atmosphere Dependent Annealing on the Electrical Characteristics of a-In2O3 Thin-film Transistors

High Temperature Conductive Stability of Indium Tin Oxide Films