Effect of nitrogen partial pressure on the TCR of magnetron sputtered indium tin oxide thin films at high temperatures

Zhichun Liu,Junsheng Liang,Hao Zhou,Jian Li,Mingjie Yang,Sen Cao,Jun Xu

DOI: https://doi.org/10.1016/j.ceramint.2022.01.165

IF: 5.532

2022-05-01

Ceramics International

Abstract:Indium tin oxide (ITO) is a promising sensitive material for ultra-high temperature thin-film sensors (UTTSs) applied in thermal and mechanical parameters test in hot section parts. However, the instability of the temperature coefficient of resistance (TCR) in the ITO film is still one of the major limiting factors in accuracy improvement of the UTTSs. In this work, different ITO thin film samples were prepared by RF magnetron sputtering with various N2/Ar ratios changing from 10%–40%, and the effect of nitrogen partial pressure (NPP) on the TCR of ITO films in elevated temperature from 500 °C to 1200 °C was studied. The micromorphology, crystallographic structures and electrical performances of ITO films were examined by scanning electron microscope (SEM), X-ray diffraction (XRD) and Hall effect measurement, respectively. Results show that lower crystallinity and smaller grain of ITO films can be observed with the increase of NPP. In addition, we found that the recrystallization is one of the main factors affecting the TCR repeatability in the thermal cycle test. The grain growth rate (GGR) is only 27.0% in the 20%N2 ITO film after the thermal cycle test from 500 °C to 1200 °C, far lower than that of the 40%N2 ITO film (309.6%). Consequently, the 20%N2 ITO film showed the lowest TCR volatility rates (TVR) after the thermal cycle test, which were respectively recorded as only about 0.5% and 2.1% at 800 °C and 1200 °C. The high TCR stability in the 20%N2 ITO film can be attributed to the formation of the stable phase structure during the thermal cycle test. Furthermore, the 20%N2 ITO film also has the smallest TCR compared with other ITO films.

materials science, ceramics