Efficient Hole Injection of MoO<sub>x</sub>-Doped Organic Layer for Printable Red Quantum Dot Light-Emitting Diodes

Yangbin Zhu,Hailong Hu,Yang Liu,Xiaojing Zheng,Songman Ju,Wanzhen Lin,Tailiang Guo,Fushan Li
DOI: https://doi.org/10.1109/LED.2019.2916933
IF: 4.8157
2019-01-01
IEEE Electron Device Letters
Abstract:In this letter, we report the high-performance quantum dot light-emitting diodes (QLEDs) with a hybrid hole injection layer (HIL) by doping MoO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> into poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT:PSS). By this method, the Fermi level of HIL increases from 4.9 to 5.3 eV, allowing better energy level matching and more efficient hole injection capability. The resultant devices exhibit maximum current efficiency of 18.6 cd/A and peak external quantum efficiency of 18.2%, almost 1.5-folds higher than those (12.7 cd/A and 12.3 %) of the control device based on pristine PEDOT:PSS HIL. Most importantly, the hydrophobicity of PEDOT: PSS on transparent conductive oxide can be dramatically improved upon MoO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> doping, which provides promising potential in ink-jet printing for large-area fabrication of devices.
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