High-efficiency inkjet-printed quantum-dot light-emitting diode enabled by solvent-resistant hole transport materials with high surface energy and extended conjugation
Gengrui Qiu,Yuan-Qiu-Qiang Yi,Liming Xie,Fuyan Su,Ting Wang,Wenming Su,Zheng Cui
DOI: https://doi.org/10.1007/s40843-023-2692-x
2024-01-03
Science China Materials
Abstract:Quantum-dot light-emitting diodes (QLEDs) prepared using the solution method have great potential in printed displays, particularly when combined with inkjet printing. The surface energy of the lower film plays a crucial role in the spreading of the upper film in QLEDs. High surface energy promotes close contact between different functional film layers and reduces leakage currents. However, cross-linkable hole transport materials (HTMs) with low surface energies are unsuitable for inkjet printing. Herein, a cross-linkable HTM and its polymer derivative were fabricated using a molecular design. The new polymer poly 9-(4-(ethoxymethyl)phenyl)-3-(7-(9-(4-((hexa-2,4-diyn-1-yloxy)methyl)-phenyl)-9 H -carbazol-3-yl)-9,9-dimethyl-9 H -fluoren-2-yl)-9 H -carbazole (PDA-FLCZ) is synthesized via the polymerization of 3,3′-(9,9-dimethyl-9 H -fluorene-2,7-diyl)bis[9-(4-(prop-2-yn-1-yloxy)methyl)phenyl]-9 H -carbazole (DA-FLCZ). For the new HTM, stable network structures can be formed at low cross-linking temperatures using two cross-linking strategies, in-situ photothermal cross-linking and thermal cross-linking after prepolymerization, exhibiting excellent solvent resistance and high surface energy. By optimizing the cross-linking process, the cross-linked PDA-FLCZ achieves higher hole mobility and lower trap density, resulting in a maximum external quantum efficiency (EQE) of 17.59% for spin-coated QLEDs, which is 23% higher than that of the device based on DA-FLCZ (14.25%). Moreover, the inkjet-printed QLEDs based on the cross-linked PDA-FLCZ demonstrate a maximum EQE of 15.28%, which is close to 90% of the value of its spin-coated devices.
materials science, multidisciplinary