Abstract:A feasible ligand‐pinning‐assisted approach is reported to modulate the nucleation and growth of perovskite quantum dots (PQDs), allowing for size tuning of PQDs and therefore their spectroscopies. Meanwhile, the defective surface matrix of PQDs is effectively repaired, and the stacking orientation of PQD solids is also obviously ameliorated, leading to higher performance of PQD‐light emitting diodes being realized. Perovskite quantum dots (PQDs) show high potential for new‐generation light‐emitting diodes (LEDs) due to their outstanding optoelectronic properties. Even though the red PQD‐LEDs can be realized through mixing halide in the PQDs to tune their spectroscopies, the PQDs may suffer from phase separation under a high electric field, predominantly affecting LED applications. Herein, a ligand‐pinning‐assisted approach is reported to tune the spectroscopies of CsPbI3 PQDs, in which vinyl phosphonic acid (VPA) is applied as function ligands to regulate the nucleation and growth of PQDs during the synthesis. Systematically experimental studies and theoretical calculations are conducted to comprehensively understand the functions of the VPA ligands during the PQD synthesis, which reveals that the VPA ligands with high binding energy with Pb2+ cations could firmly anchor on the surface matrix of PQDs without desorption, regulating the growth of PQDs and thus resulting in tunable spectroscopies being realized. Meanwhile, VPA could also renovate the defective surface matrix of PQDs, substantially diminishing trap‐induced nonradiative recombination. Consequently, red PQD‐LEDs deliver a high external quantum efficiency of 22.83%, which is significantly improved compared with the control devices. This work provides a new avenue to tune the spectroscopies of PQDs toward high‐performing LEDs.

Regulation of the conductivity and work function of PEDOT:PSS using MoO2 nanocrystals to achieve efficient CsPbBr I3- red light quantum dot light-emitting diodes

Regulation of the Conductivity and Work Function of PEDOT:PSS Using MoO2 Nanocrystals to Achieve Efficient CsPbBrxI3-x Red Light Quantum Dot Light-Emitting Diodes

Passivating CsPbBr I3− quantum dots via modifiers film to achieve efficient red light-emitting diodes

Passivating CsPbBrxI3_x Quantum Dots Via Modifiers Film to Achieve Efficient Red Light-Emitting Diodes

Improved Efficiency of Red Perovskite Quantum Dots-Based Light-Emitting Diodes by Thickness Tuning of PEDOT:PSS

Surface Ligand Engineering-Assisted CsPbI3 Quantum Dots Enable Bright and Efficient Red Light-Emitting Diodes with a Top-Emitting Structure

Efficient Hole Injection of MoO<sub>x</sub>-Doped Organic Layer for Printable Red Quantum Dot Light-Emitting Diodes

Efficient and Stable CF3PEAI-Passivated CsPbI3 QDs Toward Red LEDs.

Dipole Modulation Engineering Enhances Structural Order of PEDOT:PSS for Efficient and Stable InP-Based QLEDs

Electron Delocalization in CsPbI3 Quantum Dots Enables Efficient Light‐Emitting Diodes with Improved Efficiency Roll‐Off

Synergistic function of doping and ligand engineering to enhance the photostability and electroluminescence performance of CsPbBr 3 quantum dots

Ligand‐Pinning Induced Size Modulation of CsPbI3 Perovskite Quantum Dots for Red Light‐Emitting Diodes

Enhancing the Brightness of CsPbBr3 Quantum Dot Electroluminescence Light-Emitting Diodes by Manipulation of PEDOT:PSS Films

Efficient and Stable CF 3 PEAI-Passivated CsPbI 3 QDs toward Red LEDs

High-Efficiency Pure-Red CsPbI 3 Quantum Dot Light-Emitting Diodes Enabled by Strongly Electrostatic Potential Solvent and Sequential Ligand Post-treatment Process

Electron Delocalization in CsPbI 3 Quantum Dots Enables Efficient Light‐Emitting Diodes with Improved Efficiency Roll‐Off

Record High External Quantum Efficiency of 20% Achieved in Fully Solution-Processed Quantum Dot Light-Emitting Diodes Based on Hole-Conductive Metal Oxides

Suppressing Ion Migration of Mixed‐Halide Perovskite Quantum Dots for High Efficiency Pure‐Red Light‐Emitting Diodes

Molecular manipulation of PEDOT:PSS for efficient hole transport by incorporation of N-doped carbon quantum dots

Synchronously Polishing the Lead-Rich Surface and Passivating Surface Defects of CsPb(Br/I)3 Quantum Dots for High-Performance Pure-Red PeLEDs

Silicon-Quantum-Dot Light-Emitting Diodes with Interlayer-Enhanced Hole Transport