Utilization of Nanoporous Nickel Oxide as the Hole Injection Layer for Quantum Dot Light-Emitting Diodes

Wei-Sheng Chen,Sheng-Hsiung Yang,Wei-Cheng Tseng,Wilson Wei-Sheng Chen,Yuan-Chang Lu
DOI: https://doi.org/10.1021/acsomega.1c01618
IF: 4.1
2021-05-12
ACS Omega
Abstract:Nickel oxide (NiO<sub>x</sub>) has been extensively investigated as the hole injection layer (HIL) for many optoelectronic devices because of its excellent hole mobility, high environmental stability, and low-cost fabrication. In this research, a NiO<sub>x</sub> thin film and nanoporous layers (NPLs) have been utilized as the HIL for the fabrication of quantum dot light-emitting diodes (QLEDs). The obtained NiO<sub>x</sub> NPLs have spongelike nanostructures that possess a larger surface area to enhance carrier injection and to lower the turn-on voltage as compared with the NiO<sub>x</sub> thin film. The energy levels of NiO<sub>x</sub> were slightly downshifted by incorporating the nanoporous structure. The amount of Ni<sub>2</sub>O<sub>3</sub> species is higher than that of NiO in the NiO<sub>x</sub> NPL, confirming its good hole transport ability. The best QLED was achieved with a 30 nm thick NiO<sub>x</sub> NPL, exhibiting a maximum brightness of 68 646 cd m<sup>–2</sup>, a current efficiency of 7.60 cd A<sup>–1</sup>, and a low turn-on voltage of 3.4 V. More balanced carrier transport from the NiO<sub>x</sub> NPL and ZnO NPs/polyethylenimine ethoxylated (PEIE) is responsible for the improved device performance.This article has not yet been cited by other publications.
chemistry, multidisciplinary
What problem does this paper attempt to address?
The paper attempts to address the issue of achieving more efficient carrier transport and higher device performance in quantum dot light-emitting diodes (QLEDs). Specifically, the authors investigate the application of nanoporous nickel oxide (NiO_x NPLs) as a hole injection layer (HIL) to improve the performance of QLEDs. ### Background 1. **Development of QLEDs**: Since Alivisatos and others first reported quantum dot (QD)-based light-emitting diodes (QLEDs), many scientists have been dedicated to improving the brightness and efficiency of QLEDs. 2. **Existing Structure**: A typical QLED structure includes an anode/hole injection layer (HIL)/hole transport layer (HTL)/CdSe quantum dots/electron transport layer (ETL)/electron injection layer (EIL)/cathode. 3. **Main Issues**: Despite the high brightness and efficiency achieved with QD materials and related QLEDs, there are still two main issues: - **Unbalanced electron-hole transport**: Commonly used hole transport materials such as PEDOT:PSS, poly-TPD, and TFB have much lower hole mobility compared to the electron transport material ZnO. - **Insufficient device lifetime**: PEDOT:PSS accelerates device performance degradation and shortens device lifetime due to its acidity and hydrophilicity. ### Solution 1. **Nanoporous Nickel Oxide (NiO_x NPLs)**: The authors prepared nanoporous nickel oxide films and used them as the hole injection layer in QLEDs. These nanoporous structures have a larger surface area, which can enhance carrier injection and reduce the turn-on voltage. 2. **Experimental Results**: - **Structure and Performance**: Observed through scanning electron microscopy (SEM) and atomic force microscopy (AFM), NiO_x NPLs have a sponge-like nanostructure, and the surface roughness increases with thickness. - **Energy Levels**: Measured by ultraviolet photoelectron spectroscopy (UPS), the energy levels of NiO_x NPLs are similar to thin layers but slightly lower. - **Electrical Performance**: QLEDs using a 30 nm thick NiO_x NPL as the HIL exhibited the highest brightness (68,646 cd m^-2), current efficiency (7.60 cd A^-1), and lower turn-on voltage (3.4 V). - **Carrier Transport Balance**: When combined with ZnO NPs/PEIE, NiO_x NPLs achieved more balanced carrier transport, thereby improving device performance. ### Conclusion By using nanoporous nickel oxide (NiO_x NPLs) as the hole injection layer, the authors successfully improved the brightness, current efficiency, and reduced the turn-on voltage of QLEDs. This study provides new options and possibilities for the future commercialization of QLEDs.