Abstract:GaN power transistors are attracting increasing attention for next-generation power switching applications. However, GaN power transistors should not be regarded as a direct replacement for silicon power metal–oxide–semiconductor field-effect transistors, since the unique properties of GaN power transistors require special treatment. In this work we review a unique and critical property of GaN power transistors, the dynamic threshold voltage (V th). GaN power transistors feature a p-GaN gate structure, while the gate metal contacts the p-GaN layer through a Schottky junction. This unique p-GaN gate structure is distinctively different from the silicon metal–oxide–semiconductor gate structure in that the p-GaN layer is actually a floating region without direct electrical contact to the external electrodes of the device. The floating p-GaN layer enables a charge storage process during the switching operation of a p-GaN gate high-electron-mobility transistor. Through carefully designed experiments, the strong correlation between charge storage and the dynamic V th shift has been revealed; this also serves as an approach to accurately predict the dynamic V th during switching operation. The influence of the dynamic V th on power switching applications is discussed. For example, with a positive dynamic V th shift, the reverse conduction voltage of a GaN power transistor is significantly increased, adding to the power loss. This positive V th shift also demands a sufficiently high gate drive voltage to ensure that the GaN power transistor can be fully turned on, which reduces the safety margin for the gate reliability of the device. To design a GaN based power switching circuit, accurate simulation of the device/circuit characteristics is necessary. Circuit simulations that do not consider the dynamic V th lead to a large deviation from the measurement circuit characteristics. We demonstrate that by incorporating the dynamic V th into the circuit model this deviation can be effectively eliminated.

Quantitative Analysis and Suppression Strategies of Dv/dt Induced Turn-on of Cascode GaN FETs in Half-bridge Circuits

An Improved Analytical Model of GaN HEMT in Cascode Configuration During Turn-on Transition

Analysis and Suppression of High Speed Dv/Dt Induced False Turn-on in GaN HEMT Phase-Leg Topology

A Normalized Quantitative Method for GaN HEMT Turn-ON Overvoltage Modeling and Suppressing

D<i>v</i>/D<i>t</i>-Control of 1200-V Normally-OFF SiC-JFET/GaN-HEMT Cascode Device

Analysis of Drain-Dependent Threshold Voltage and False Turn-On of Schottky-Type P-Gan Gate HEMT in Bridge-Leg Circuit

A Gate Driver with a Negative Turn Off Bias Voltage for GaN HEMTs

A 400-V Half Bridge Gate Driver for Normally-off GaN HEMTs with Effective dv/dt Control and High dv/dt Immunity

The Application of Gate-Drain Underlap Architecture in TFET-based Inverters

Analysis of Double Trench Insulated Gate Bipolar Transistor

Switching Transient Analysis for Normally-off GaN Transistors with P-Gan Gate in a Phase-Leg Circuit

Dv/Dt-control of 1200-V Co-packaged SiC- JFET/GaN-HEMT Cascode Device

TCAD Study on Suppression of Substrate-Induced Degradation in GaN-on-Si Integrated Half-Bridge Circuit by Local Si Lateral Etch

Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance

Analytical Modeling of Threshold Voltage for Double Gate MOSFET

Experimental Investigation on the Turn-Off Failure Mechanism of IGCT

Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type P-Gan Gate HEMT

Principles and Impacts of Dynamic Threshold Voltage in a P-Gan Gate High-Electron-mobility Transistor

A Study on the Threshold Voltage Shift under Gate-pulse Stress in D-mode GaN MIS-HEMTs

Hybrid P-Gan/mis Gate HEMT Suppressing Drain-Induced Dynamic Threshold Voltage Instability