Length-controlled and Selective Growth of Individual Indium Nitride Nanowires by Localized Laser Heating

Eunpa Kim,Junsuk Rho,Sang-gil Ryu,David Hwang,Yoonkyung Lee,Kyunghoon Kim,Costas Grigoropoulos
DOI: https://doi.org/10.7567/1882-0786/ab1713
IF: 2.819
2019-01-01
Applied Physics Express
Abstract:Length-controlled indium nitride (InN) nanowires are grown by localized laser-assisted metal organic vapor phase epitaxy. Laser irradiation results in spatially confined, rapid heating that enables precise nucleation control and subsequent nanowire growth. This localization of the laser-driven growth can realize on-demand and site-selective direct synthesis of length-controlled nanowires on catalytic gold nanodots. The length of the InN nanowires is controlled by the laser irradiation time at a fixed power. Energy dispersive X-ray, Raman and photoluminescence spectroscopic analyzes respectively characterize the elemental composition, crystallinity, and emission properties of as-grown InN nanowires. (c) 2019 The Japan Society of Applied Physics
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