Abstract:The microstructure and electrical–optical properties of Al-doped ZnO (AZO) films have been studied as a function of H2 flux in the magnetron sputtering process at 150 °C and postannealing temperature in vacuum. As H2 flux increases in the sputtering gas, the AZO films deposited have a (002) preferred orientation rather than the mixed (100) and (002) orientations, the grain size shows a tendency to first increase then decrease, and (002) diffraction peak position is inclined to shift to higher angles first then to lower angles. The resistivity of the films first decreases then increases with H2 flux, and the lowest resistivity of 4.02 × 10−4 Ω cm is obtained at a H2 flux of 10 sccm. The average transmittance in the visible region shows little dependence on H2 flux. As a whole, the AZO films with higher values of figure of merit are obtained when the H2 flux is in the range of 6–12 sccm. The AZO films deposited in Ar and Ar + H2 exhibit different annealing behaviors. For the AZO film deposited in Ar, the grain size gradually increases, the stresses are relaxed, the resistivity first decreases then increases, and the average transmittance in the visible region is unchanged initially then somewhat decreased as annealing temperature is increased. The optimum annealing temperature for improving properties of AZO films deposited in Ar is 300 °C. For the AZO films deposited in Ar + H2, annealing does not significantly change the microstructure but increases the resistivity of the films; the average transmittance in the visible region remains unchanged initially but greatly reduced with further increase in annealing temperature. The carrier transport in the as-deposited and annealed films appears to be controlled by a mechanism of grain boundary scattering, and the value of Eg increases with the increase in carrier concentration due to Burstein–Moss effect.

Optical and Electrical Properties of Al Doped ZnO Thin Film with Preferred Orientation in Situ Grown at Room Temperature

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

Effect of Al-doped on Optics and Electricity of ZnO (ZnO∶Al) Thin Films

Transparent Conductive Al-Doped Zno Thin Films Grown at Room Temperature

Optical and Electrical Properties of Al-doped ZnO Thin Films by Atomic Layer Deposition

Structural ,Electrical ,and Optical Properties of Transparent Conductive Al-Doped ZnO Films Prepared by RF Magnetron Sputtering

Optical and Electrical Properties of Aluminum-Doped ZnO Thin Films Grown by Pulsed Laser Deposition

The properties of Al doped ZnO thin films deposited on various substrate materials by RF magnetron sputtering

Studies on Morphology, Electrical and Optical Characteristics of Al-doped ZnO Thin Films Grown by Atomic Layer Deposition

Influence of Deposition Temperature on the Crystallinity of Al-doped ZnO Thin Films at Glass Substrates Prepared by RF Magnetron Sputtering Method

Effect of Al-doping on electrical and optical properties of ZnO films

Structural and Optoelectronic Properties of AZO Thin Films Prepared by RF Magnetron Sputtering at Room Temperature

Preparation of Aluminum Doped Zinc Oxide Films and the Study of Their Microstructure, Electrical and Optical Properties

Tailoring of Optical and Electrical Properties of Transparent and Conductive Al-doped ZnO Films by Adjustment of Al Concentration

Study on Aluminum Concentration on Optical and Electrical Properties of AZO Thin Films Fabricated by Ultrasonic Spray Pyrolysis

Study on X-ray Photoelectron Spectroscopy Spectra and Electrical Properties of Al Doped ZnO Thin Films

Micrographs and Optical Properties of Al-Doped Zno Thin Films Deposited by Radio Frequency Magnetron Sputtering

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Characteristics of Al-doped ZnO Thin Films Prepared in Ar + H2 Atmosphere and Their Vacuum Annealing Behavior

Room-temperature Deposition of Transparent Conducting Al-doped ZnO Films by RF Magnetron Sputtering Method

Studies on ZnO:Al thin films deposited by in-line reactive mid-frequency magnetron sputtering