Structural and Optoelectronic Properties of AZO Thin Films Prepared by RF Magnetron Sputtering at Room Temperature

Yi-hua Sun,Hai-lin Wang,Jian Chen,Liang Fang,Lei Wang
DOI: https://doi.org/10.1016/s1003-6326(16)64275-9
IF: 3.752
2016-01-01
Transactions of Nonferrous Metals Society of China
Abstract:Al-doped ZnO thin films were prepared on glass substrate using an ultra-high density target by RF magnetron sputtering at room temperature. The microstructure, surface morphology, optical and electrical properties of AZO thin films were investigated by X-ray diffractometer, scanning electron microscope, UV-visible spectrophotometer, four-point probe method, and Hall-effect measurement system. The results showed that all the films obtained were polycrystalline with a hexagonal structure and average optical transmittance of AZO thin films was over 85 % at different sputtering powers. The sputtering power had a great effect on optoelectronic properties of the AZO thin films, especially on the resistivity. The lowest resistivity of 4.5×10−4 Ω·cm combined with the transmittance of 87.1% was obtained at sputtering power of 200 W. The optical band gap varied between 3.48 and 3.68 eV.
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