Abstract:Diamond color centers have proven to be versatile quantum emitters and exquisite sensors of stress, temperature, electric and magnetic fields, and biochemical processes. Among color centers, the silicon-vacancy (SiV[Formula: see text]) defect exhibits high brightness, minimal phonon coupling, narrow optical linewidths, and high degrees of photon indistinguishability. Yet the creation of reliable and scalable SiV[Formula: see text]-based color centers has been hampered by heterogeneous emission, theorized to originate from surface imperfections, crystal lattice strain, defect symmetry, or other lattice impurities. Here, we advance high-resolution cryo-electron microscopy combined with cathodoluminescence spectroscopy and 4D scanning transmission electron microscopy (STEM) to elucidate the structural sources of heterogeneity in SiV[Formula: see text] emission from nanodiamond with sub-nanometer-scale resolution. Our diamond nanoparticles are grown directly on TEM membranes from molecular-level seedings, representing the natural formation conditions of color centers in diamond. We show that individual subcrystallites within a single nanodiamond exhibit distinct zero-phonon line (ZPL) energies and differences in brightness that can vary by 0.1 meV in energy and over 70% in brightness. These changes are correlated with the atomic-scale lattice structure. We find that ZPL blue-shifts result from tensile strain, while ZPL red shifts are due to compressive strain. We also find that distinct crystallites host distinct densities of SiV[Formula: see text] emitters and that grain boundaries impact SiV[Formula: see text] emission significantly. Finally, we interrogate nanodiamonds as small as 40 nm in diameter and show that these diamonds exhibit no spatial change to their ZPL energy. Our work provides a foundation for atomic-scale structure-emission correlation, e.g., of single atomic defects in a range of quantum and two-dimensional materials.

Creation and Migration of Intrinsic Defects in Si‐Doped Diamond Produced Using Microwave Plasma Chemical Vapor Deposition

Formation Mechanism of SiV in Diamond from Unintentional Silicon Doping by Microwave Plasma Chemical Vapor Deposition

Improving the creation of SiV centers in diamond via sub-μs pulsed annealing treatment

Diamond-defect engineering of NV- centers using ion beam irradiation

Molecular dynamics simulation of silicon ion implantation into diamond and subsequent annealing

Creation of color centers in diamond by recoil implantation through dielectric films

Fabrication of Diamond Nanoneedle Arrays Containing High‐Brightness Silicon‐Vacancy Centers

Unraveling sources of emission heterogeneity in Silicon Vacancy color centers with cryo-cathodoluminescence microscopy

Microwave heating effect on diamond sample of NV centers

Low temperature investigations of single silicon vacancy colour centres in diamond

Revealing impurity evolution in silicon-doped diamond film via thermal oxidation

Bright silicon vacancy centers in diamond/SiC composite films synthesized by a MPCVD method

Formation and properties of silicon vacancies in MPCVD-grown polycrystalline diamond

Large-scale Fabrication of High-Density Silicon-vacancy Centers via Helium-ion Implantation of Diamond Nucleation Surface

Evaluation of single silicon vacancy centers in nanodiamonds created by ion implantation at cryogenic temperatures

Engineering quantum-coherent defects: The role of substrate miscut in chemical vapor deposition diamond growth

Calculation ofthe transitions and migration of nitrogen and vacancy related defects,with implications on the formation of NV centers in bulk diamond

Plasma treatments and photonic nanostructures for shallow nitrogen vacancy centers in diamond

Photoluminescence study on the optical properties of silicon-vacancy centre in diamond

Photoluminescence decomposition analysis: a technique to characterize NV creation in diamond