Band Engineering and Crystal Field Screening in Thermoelectric Mg3Sb2

Xiaojian Tan,Guo-Qiang Liu,Haoyang Hu,Hezhu Shao,Jingtao Xu,Jun Jiang

DOI: https://doi.org/10.1039/c9ta00288j

IF: 11.9

2019-01-01

Journal of Materials Chemistry A

Abstract:Based on careful analysis of local chemical bonding, valence band convergence is designed in Mg3Sb2 by crystal field screening.

What problem does this paper attempt to address?

Temperature-Driven Twin Structure Formation and Electronic Structure of Epitaxially Grown Mg3Sb2 Films on Mismatched Substrates

Sen Xie,Yujie Ouyang,Wei Liu,Fan Yan,Jiangfan Luo,Xianda Li,Ziyu Wang,Yong Liu,Xinfeng Tang

DOI: https://doi.org/10.3390/nano12244429

IF: 5.3

2022-12-12

Nanomaterials

Abstract:Mg3Sb2-based compounds are one type of important room-temperature thermoelectric materials and the appropriate candidate of type-II nodal line semimetals. In Mg3Sb2-based films, compelling research topics such as dimensionality reduction and topological states rely on the controllable preparation of films with high crystallinity, which remains a big challenge. In this work, high quality Mg3Sb2 films are successfully grown on mismatched substrates of sapphire (000l), while the temperature-driven twin structure evolution and characteristics of the electronic structure are revealed in the as-grown Mg3Sb2 films by in situ and ex situ measurements. The transition of layer-to-island growth of Mg3Sb2 films is kinetically controlled by increasing the substrate temperature (Tsub), which is accompanied with the rational manipulation of twin structure and epitaxial strains. Twin-free structure could be acquired in the Mg3Sb2 film grown at a low Tsub of 573 K, while the formation of twin structure is significantly promoted by elevating the Tsub and annealing, in close relation to the processes of strain relaxation and enhanced mass transfer. Measurements of scanning tunneling spectroscopy (STS) and angle-resolved photoemission spectroscopy (ARPES) elucidate the intrinsic p-type conduction of Mg3Sb2 films and a bulk band gap of ~0.89 eV, and a prominent Fermi level downshift of ~0.2 eV could be achieved by controlling the film growth parameters. As elucidated in this work, the effective manipulation of the epitaxial strains, twin structure and Fermi level is instructive and beneficial for the further exploration and optimization of thermoelectric and topological properties of Mg3Sb2-based films.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance P-Type Mg3Sb2 Zintl Compounds

Jinsuo Hu,Jianbo Zhu,Fengkai Guo,Haixu Qin,Yijie Liu,Qian Zhang,Zihang Liu,Wei Cai,Jiehe Sui

DOI: https://doi.org/10.34133/2022/9842949

IF: 11

2022-01-01

Research

Abstract:Environmentally friendly Mg3Sb2-based materials have drawn intensive attention owing to their promising thermoelectric performance. In this work, the electrical properties of p-type Mg3Sb2 are dramatically optimized by the regulation of Mg deficiency. Then, we, for the first time, found that Zn substitution at the Mg2 site leads to the alignment of px,y and pz orbital, resulting in a high band degeneracy and the dramatically enhanced Seebeck coefficient, demonstrated by the DFT calculations and electronic properties measurement. Moreover, Zn alloying decreases Mg1 (Zn) vacancies formation energy and in turn increases Mg (Zn) vacancies and optimizes the carrier concentration. Simultaneously, the Mg/Zn substitutions, Mg vacancies, and porosity structure suppress the phonon transport in a broader frequency range, leading to a low lattice thermal conductivity of ~0.47 W m-1 K-1 at 773 K. Finally, a high ZT of ~0.87 at 773 K was obtained for Mg1.95Na0.01Zn1Sb2, exceeding most of the previously reported p-type Mg3Sb2 compounds. Our results further demonstrate the promising prospects of p-type Mg3Sb2-based material in the field of mid-temperature heat recovery.
Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance p-Type Mg 3 Sb 2 Zintl Compounds

Jinsuo Hu,Jianbo Zhu,Fengkai Guo,Haixu Qin,Yijie Liu,Qian Zhang,Zihang Liu,Wei Cai,Jiehe Sui

DOI: https://doi.org/10.34133/2022/9842949

IF: 11

2022-04-29

Research

Abstract:Environmentally friendly Mg 3 Sb 2 -based materials have drawn intensive attention owing to their promising thermoelectric performance. In this work, the electrical properties of p-type Mg 3 Sb 2 are dramatically optimized by the regulation of Mg deficiency. Then, we, for the first time, found that Zn substitution at the Mg2 site leads to the alignment of p x , y and p z orbital, resulting in a high band degeneracy and the dramatically enhanced Seebeck coefficient, demonstrated by the DFT calculations and electronic properties measurement. Moreover, Zn alloying decreases Mg1 (Zn) vacancies formation energy and in turn increases Mg (Zn) vacancies and optimizes the carrier concentration. Simultaneously, the Mg/Zn substitutions, Mg vacancies, and porosity structure suppress the phonon transport in a broader frequency range, leading to a low lattice thermal conductivity of ~0.47 W m -1 K -1 at 773 K. Finally, a high ZT of ~0.87 at 773 K was obtained for Mg 1.95 Na 0.01 Zn 1 Sb 2 , exceeding most of the previously reported p-type Mg 3 Sb 2 compounds. Our results further demonstrate the promising prospects of p-type Mg 3 Sb 2 -based material in the field of mid-temperature heat recovery.

multidisciplinary sciences
Revealing the temperature-driven Lifshitz transition in p -type Mg3Sb2-based thermoelectric materials

Sen Xie,Keke Liu,Chunxia Li,Fan Yan,Yujie Ouyang,Haoran Ge,Xianda Li,Xianli Su,Yong Liu,Wei Liu,Xinfeng Tang

DOI: https://doi.org/10.1063/5.0199093

IF: 4

2024-02-26

Applied Physics Letters

Abstract:The manipulation of native atomic defects and their thermal excitations plays vital roles in the thermoelectric performance of Mg3Sb2-based materials. While native defects manipulation has been intensively studied in p-type Mg3Sb2, there exists interesting unsolved issue regarding the abnormal semiconducting electrical behavior in most of samples. In this work, high quality Mg3Sb2 and Mg3Bi2 (00l) films are fabricated by molecular beam epitaxy technique, while variable temperature angle-resolved photoemission spectroscopy and scanning tunneling spectroscopy measurements are utilized for resolving the aforementioned issue. The thermal excitation of Mg interstitials (the electron donor) results in an obvious downshift of valence bands with rising temperature in both the p-type Mg3Sb2 and Mg3Bi2. Meanwhile, the interesting temperature-driven Lifshitz transition is discovered in the p-type Mg3Sb2, as indicated by the change of Fermi surface topology. Above the Lifshitz transition temperature, the Fermi level of p-type Mg3Sb2 will enter the bandgap, which leads to the abnormal semiconducting electrical behavior. This work discloses the excitation of native defects and temperature-driven Lifshitz transition, which are the main causes for the anomalies in electrical transport of p-type Mg3Sb2-based materials, and also provides valuable insights for further improving their thermoelectric performance.

physics, applied
Visualizing the Mg atoms in Mg3Sb2 thermoelectrics using advanced iDPC-STEM technique

P. Nan,A. Li,L. Cheng,K. Wu,Z. Liang,F. Lin,C. Fu,T. Zhu,B. Ge

DOI: https://doi.org/10.1016/j.mtphys.2021.100524

IF: 11.021

2021-01-01

Materials Today Physics

Abstract:Mg3Sb2-based Zintl phase compounds have attracted considerable attention as promising thermoelectric materials in recent years. Mg defects are generally thought to play an important role in the n-type conduction of Mg3Sb2, and obtaining atomic occupancy of Mg and Sb is important for understanding the relationship of atomic defects and transport properties. However, the high angle annular dark-field (HAADF) and annular bright-field (ABF) in scanning transmission electron microscopy (STEM), which were commonly used to reveal the atomic information of other thermoelectric materials, failed to visualize the Mg atoms of Mg3Sb2, giving an illusion of the disappearance of Mg. In this work, the advanced integrated differential phase contrast (iDPC) technique is used, which clearly visualize the Mg and Sb atoms simultaneously in Mg3Sb2 single crystal. We found that Mg and Sb occupancy the real lattice sites without observing the interstitial Mg atoms. Our results highlight the importance of the iDPC technique in revealing the accurate atomic occupancy of light-element-based thermoelectrics, which will pave the way for understanding the microstructure-properties relationship. (C) 2021 Elsevier Ltd. All rights reserved.
Developing a Multiband Electronic Band Structure Model and Predictive Maps for Bismuth-Rich Mg 3 (Sb 1– x Bi x ) 2 Thermoelectric Materials

Harshada Suryawanshi,Bharti Agrawal,Nirma Kumari,Titas Dasgupta

DOI: https://doi.org/10.1021/acsami.3c15019

IF: 9.5

2024-01-03

ACS Applied Materials & Interfaces

Abstract:In recent years, bismuth-rich Mg3(Sb1-xBix)2 (x = 0.5-0.8) compositions have generated significant interest due to their excellent thermoelectric (TE) performance near room temperature, making them potential applicants for recovery of low-grade waste heat. The superior performance in these materials is due to its complex electronic band structure (EBS) with presence of multiple near degenerate bands close to the conduction band edge. The position and curvature of these bands strongly depend on the alloy composition, doping amount as well as temperature. Thus, identifying optimal material compositions to get the best TE performance depends on an understanding of the temperature dynamics of EBS and forms the objective of this work. Mg3Sb0.6Bi1.4 (x = 0.7) is chosen for this study due to its reported high near room temperature performance, and compositions with varying doping concentrations (Te used as dopant) have been synthesized. EBS parameters like effective mass and deformation potential of bands, interband separation and band gap values have been estimated using a recently developed refinement approach. Refinement results indicate that the interband separation between conduction bands to be a function of both temperature and doping concentration. Further, thermal conductivity (κ) was estimated for all of the compositions. Utilizing the EBS and κ information, predictive 3D maps indicating the variation in zT (TE figure of merit) with doping concentration and temperature have been generated. The 3D maps reveal an interesting surface topography with a broad peak zT region. This observation explains why these materials have high TE performance and are less sensitive to doping inhomogeneities. Our results provide detailed EBS information and fundamental insights on the TE properties of Mg3Sb0.6Bi1.4. Further, the proposed technique can be utilized to probe other Mg3(Sb1-xBix)2 compositions and TE materials.

materials science, multidisciplinary,nanoscience & nanotechnology
Significant Role of Mg Stoichiometry in Designing High Thermoelectric Performance for Mg3(Sb,Bi)2-Based N-Type Zintls.

Jing Shuai,Binghui Ge,Jun Mao,Shaowei Song,Yumei Wang,Zhifeng Ren

DOI: https://doi.org/10.1021/jacs.7b12767

IF: 15

2018-01-01

Journal of the American Chemical Society

Abstract:Complex structures with versatile chemistry provide considerable chemical tunability of the transport properties. Good thermoelectric materials are generally extrinsically doped semiconductors with optimal carrier concentrations, while charged intrinsic defects (e.g., vacancies, interstitials) can also adjust the carriers, even in the compounds with no apparent deviation from a stoichiometric nominal composition. Here we report that in Zintl compounds Mg3+xSb1.5Bi0.5, the carrier concentration can be tuned from p-type to n-type by simply altering the initial Mg concentration. The spherical-aberration-corrected (CS-corrected) high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) and energy-dispersive X-ray spectroscopy (EDX) mapping analysis show that the excess Mg would form a separate Mg-rich phase after Mg vacancies have been essentially compensated. Additionally, a slight Te doping at Bi site on Mg3.025Sb1.5Bi0.5 has enabled good n-type thermoelectric properties, which is comparable to the Te-doped Mg-rich sample. The actual final composition of Mg3.025Sb1.5Bi0.5 analyzed by EPMA is also close to the stoichiometry Mg3Sb1.5Bi0.5, answering the open question whether excess Mg is prerequisite to realize exceptionally high n-type thermoelectric performance by different sample preparation methods. The motivation for this work is first to understand the important role of vacancy and then to guide for discovering more promising n-type Zintl thermoelectric materials.
Mg3(Bi,Sb)2 single crystals towards high thermoelectric performance

Yu Pan,Mengyu Yao,Xiaochen Hong,Yifan Zhu,Fengren Fan,Kazuki Imasato,Yangkun He,Christian Hess,Jörg Fink,Jihui Yang,Bernd Büchner,Chenguang Fu,G. Jeffrey Snyder,Claudia Felser

DOI: https://doi.org/10.1039/d0ee00838a

2020-01-01

Abstract:Ternary Mg3(Bi,Sb)2 single crystals showing high thermoelectric performance are for the first time grown by the Mg flux method.
Compromise between band structure and phonon scattering in efficient n-Mg3Sb2-Bi thermoelectrics

Xuemin Shi,Xinyue Zhang,Alexander Ganose,Junsoo Park,Cheng Sun,Zhiwei Chen,Siqi Lin,Wen Li,Anubhav Jain,Yanzhong Pei

DOI: https://doi.org/10.1016/j.mtphys.2021.100362

IF: 11.021

2021-05-01

Materials Today Physics

Abstract:n-type Mg3Sb2-based materials have become a top candidate for efficient thermoelectric applications within 300–700 K, due to its high band degeneracy, inherently high carrier mobility and low lattice thermal conductivity, as well as its advantages of less toxicity and abundance. Existing works showed that Mg3Bi2-alloying largely help ensure the exceptional performance, leaving a key issue to be uncovered on the primary mechanisms favoring or limiting the thermoelectric performance of Mg3Sb2-x Bi x alloys. Here we focus on the alloy composition dependent transport properties at various temperatures, with a large volume of experimental data. It is revealed that, with increasing x, the reduction in both inertial mass and lattice thermal conductivity is significantly beneficial, but the closure in band gap leads to a strong compensation due to the bipolar effect. Such a compromise between band structure and phonon scattering results in optimal Mg3Bi2-alloying concentrations to be about 50%–75% at 300 K, 50%–60% at 450 K and 50% at 600 K, which successfully guiding this work to realize extraordinary thermoelectric figure of merit at these temperatures.

materials science, multidisciplinary,physics, applied
Enhancing Thermoelectric Performance of AB2Sb2-type Zintl Phase Through Band Shaping and Lattice Distortion

Qi Xu,Kunpeng Zhao,Haoran Huang,Shun Wan,Qingyong Ren,Xiaowen Hao,Hexige Wuliji,Jingdan Lei,Tian-Ran Wei,Xun Shi

DOI: https://doi.org/10.1016/j.actamat.2024.120040

IF: 9.4

2024-01-01

Acta Materialia

Abstract:AB2Sb2-type Zintl phases, especially Mg3Sb2, have garnered widespread attention in virtue of their nontoxic constituent elements and outstanding thermoelectric performance in n-type materials. However, the p-type counterpart of AB2Sb2 still struggles with a low figure of merit zT, primarily because of the limited valence band degeneracy, large band effective mass, and relatively high thermal conductivity. Here we simultaneously optimize the electrical and thermal transports of p-type AB2Sb2-based materials through shaping the band edge and distorting the crystal lattice. By alloying Zn at Mg2 site and Ca at Mg1 site, we successfully decorate the crystal lattice of Mg3Sb2 in real space and thereby modify the band structure in reciprocal space. Zn alloying promotes the band degeneracy while Ca alloying reduce the single band effective mass, which largely promotes the transport of charge carriers. Moreover, the distorted crystal lattice effectively blocks the heat-carry phonons to reduce the lattice thermal conductivity κL. A high zT of 0.81 is finally realized at 750 K in our Zn/Ca co-alloyed samples, which is three times larger than that of Mg3Sb2 matrix. Our work opens new possibilities for the synthetic optimization of both electrical and thermal transports in Zintl phase and other thermoelectric systems.
Rational Manipulation of Epitaxial Strains Enabled Valence Band Convergence and High Thermoelectric Performances in Mg3Sb2 Films

Sen Xie,Wei Liu,Xiaolin Wan,Jianan Lyu,Fan Yan,Yujie Ouyang,Xianda Li,Yong Liu,Ziyu Wang,Rui Wang,Jinsong Wu,Qingjie Zhang,Xinfeng Tang

DOI: https://doi.org/10.1002/adfm.202300154

IF: 19

2023-02-13

Advanced Functional Materials

Abstract:This study demonstrates the rational manipulation of lattice strain and crystal field energy splitting in Mg3Sb2 epitaxial films by the choice of substrates. Theoretical and experimental efforts unambiguously validate that valence band convergence is acquired in the Mg3Sb2 film with large in‐plane compressive strain that is grown on InP substrate, leading to significantly improved carrier effective mass and Seebeck coefficients. Strain engineering is demonstrated to effectively regulate the functionality of materials, such as thermoelectric, ferroelectric, and photovoltaic properties. As the straightforward approach of strain engineering, epitaxial strain is usually proposed for rationally manipulating the electronic structure and performances of thermoelectric materials, but has rarely been verified experimentally. In this study, tunable and large epitaxial strains are demonstrated, as well as the resulting valence band convergence can be achieved in the Mg3Sb2 epi‐films with the choice of substrates. The large epitaxial strains up to 8% in Mg3Sb2 films represent one of the most striking results in strain engineering. The angle‐resolved photoemission spectroscopy measurements and the theoretical calculations reveal the vital role of epitaxial strain in tuning the crystal field splitting and the band structure of Mg3Sb2. Benefiting from the appropriate manipulation of the crystal field effect via in‐plane compressive strain, the valence band convergence is unambiguously discovered in the strained Mg3Sb2 film grown on InP(111) substrate. As a result, a state‐of‐the‐art thermoelectric power factor of 0.94 mWm−1K−2 is achieved in the strain‐engineered Mg3Sb2 film, well exceeding that of the strain‐relaxed Mg3Sb2. The work paves the way for effectively manipulating epitaxial strain and band convergence for Mg3Sb2 and other thermoelectric films.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Bi-Deficiency Leading to High-Performance in Mg3 (Sb,Bi)2 -Based Thermoelectric Materials

Jing-Wei Li,Weishu Liu,Wei Xu,Hua-Lu Zhuang,Zhijia Han,Feng Jiang,Peng Zhang,Haihua Hu,Hanbin Gao,Yilin Jiang,Bowen Cai,Jun Pei,Bin Su,Qian Li,Kei Hayashi,Hezhang Li,Yuzuru Miyazaki,Xingzhong Cao,Qiang Zheng,Jing-Feng Li

DOI: https://doi.org/10.1002/adma.202209119

Abstract:Mg3 (Sb,Bi)2 is a potential nearly-room temperature thermoelectric compound composed of earth-abundant elements. However, complex defect tuning and exceptional microstructural control are required. Prior studies have confirmed the detrimental effect of Mg vacancies (VMg ) in Mg3 (Sb,Bi)2 . This study proposes an approach to mitigating the negative scattering effect of VMg by Bi deficiency, synergistically modulating the electrical and thermal transport properties to enhance the thermoelectric performance. Positron annihilation spectrometry and Cs -corrected scanning transmission electron microscopy analyses indicated that the VMg tends to coalesce due to the introduced Bi vacancies (VBi ). The defects created by Bi deficiency effectively weaken the scattering of electrons from the intrinsic VMg and enhance phonon scattering. A peak zT of 1.82 at 773 K and high conversion efficiency of 11.3% at ∆T = 473 K are achieved in the optimized composition of Mg3 (Sb,Bi)2 by tuning the defect combination. This work demonstrates a feasible and effective approach to improving the performance of Mg3 (Sb,Bi)2 as an emerging thermoelectric material.
Large improvement in thermoelectric performance of pressure-tuned Mg 3 Sb 2

Juan Li,Shuai Zhang,Kai Han,Bing Sun,Lianzhen Cao

DOI: https://doi.org/10.1039/d1ra08930g

IF: 4.036

2022-01-01

RSC Advances

Abstract:Because of the modified electronic band structure, the thermoelectric properties of Mg 3 Sb 2 can be improved by pressure tuning.

chemistry, multidisciplinary
Band convergence and phonon engineering to optimize the thermoelectric performance of CaCd 2 Sb 2

Zongwei Zhang,Honghao Yao,Xue Jia,Xinyu Wang,Xiaofang Li,Chen Chen,Xi Lin,Jiehe Sui,Xingjun Liu,Jun Mao,Guoqiang Xie,Qian Zhang

DOI: https://doi.org/10.1063/5.0076087

IF: 4

2022-01-24

Applied Physics Letters

Abstract:Alignment of valence bands has been demonstrated to be effective in promoting the thermoelectric performance of p-type AB2X2 zintl phases. In this work, the degeneracy of the valence bands is manipulated by alloying CaCd2Sb2 with CaMg2Sb2. It is found that the Γ(pxy) band and the Γ(pz) band were effectively converged in CaCd1.5Mg0.5Sb2. By further doping Ag at the Cd site, the carrier concentration can be maintained when the alloying concentration varies. The room-temperature Seebeck coefficient increased from ∼150 μV K−1 in CaCd2Sb2 to ∼190 μV K−1 in CaCd1.5Mg0.5Sb2 when the carrier concentration was maintained at ∼2.5 × 1019 cm−3. In addition, Cd/Mg substitutional point defects with substantial atomic mass difference induced significant phonon scattering; thus, a lattice thermal conductivity as low as ∼0.5 W m−1 K−1 was achieved at 750 K. Eventually, a peak zT value of ∼1.3 was realized in CaCd1.494Ag0.006Mg0.5Sb2.

physics, applied
High thermoelectric performance and anisotropy studies of n-type Mg3Bi2-based single crystal

Qi-Qi Wang,Ke-Feng Liu,Yuan-Yuan Su,Xiao-Cun Liu,Qian Liu,Shun Zhou,Jian Liu,Sheng-Qing Xia

DOI: https://doi.org/10.1016/j.actamat.2023.119028

IF: 9.4

2023-08-01

Acta Materialia

Abstract:Layered high-performing Mg3Bi2-based materials which made from nontoxic and earth-abundant elements have been considered as a promising thermoelectric candidate for low-grade energy recycling. High-quality compositionally controllable Mg3Bi2-based single crystals are grown using modified Bridgman method. The anisotropy of in- and out of plane in high-quality Mg3Bi1.49Sb0.5Te0.01 bulk single crystals are clearly characterized, record high ZT of ∼0.9 at 300 K as well as excellent ZT avg of 1.26 in the temperature range of 300-523 K are achieved along ab-plane, both of which rank as top values among the reported literature. Owing to the higher mobility (266 vs 189 cm2·V−1·s−1), the electrical conductivity along ab-plane is about 25% larger than that along c-axis at room temperature. Besides, Seebeck coefficient and lattice thermal conductivity are insensitive to the direction, resulting in anisotropy of thermoelectric performance but smaller than van der Waals layered materials. Compared with parent Mg3Bi1.5Sb0.5, both carrier concentration and mobility are significant improved with quantitative Te doping, leading to greatly enhanced power factor. With in-depth investigations of anisotropy, the results presented here will advance the fundamental understanding of Mg3Bi2-based system and suggest new ideas on design of the state-of-art thermoelectric materials with high performance.

materials science, multidisciplinary,metallurgy & metallurgical engineering
Formation of metastable cubic phase and thermoelectric properties in Mg3Bi2 films deposited by magnetron sputtering

Wenqiang Fang,Wenyan Zhu,Yaoming Shao,Pingping Zheng,Jianxiao Si

DOI: https://doi.org/10.1016/j.apsusc.2022.153602

IF: 6.7

2022-09-15

Applied Surface Science

Abstract:Mg3Bi2 has become a promising candidate for studying thermoelectric, Mg-ion batteries and novel topological properties. In this paper, the Mg3Bi2 thin films were deposited on glass substrates by magnetron co-sputtering under substrate temperatures ranging from 535 K to 595 K. A metastable cubic Mg3Bi2 that only existed under high temperatures and high pressures was observed in the Mg3Bi2 film deposited at Ts = 535 K. A structuralphasetransition occurs as Ts increases, and a textured hexagonal Mg3Bi2 film was obtained at Ts = 595 K. The microstructure and thermoelectric properties of cubic Mg3Bi2 and hexagonal Mg3Bi2 films were systematically investigated. The cubic Mg3Bi2 film exhibited n-type semiconductor behavior. However, the hexagonal Mg3Bi2 thin film possessed a positive Seebeck coefficient. A maximum power factor of 1.1 μWcm-1K−2 was obtained in textured hexagonal Mg3Bi2 film at 393 K. Our results could pave the way toward the engineering phase of Mg3Bi2 film, which has potential applications in micro-energy harvesting devices.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Origin of the unique thermoelectric transport in Mg 3 (Sb,Bi) 2 : absent d -orbital bonding in crystal cohesion

Ruoyu Wang,Zhe Guo,Qiang Zhang,Jianfeng Cai,Guoqiang Liu,Xiaojian Tan,Jun Jiang

DOI: https://doi.org/10.1039/d2ta01385a

IF: 11.9

2022-01-01

Journal of Materials Chemistry A

Abstract:The Zintl phase compound Mg 3 (Sb,Bi) 2 has attracted much research interest, owing to its excellent thermoelectric performance comparable to n-type Bi 2 Te 3 -based materials. Among the family of AMg 2 X 2 (A=Mg, Ca, Sr, Ba,...

materials science, multidisciplinary,chemistry, physical,energy & fuels
The manipulation of substitutional defects for realizing high thermoelectric performance in Mg3Sb2-based Zintl compounds

Juan Li,Fei Jia,Shuai Zhang,Shuqi Zheng,Boyi Wang,Liqiang Chen,Guiwu Lu,Liming Wu

DOI: https://doi.org/10.1039/c9ta06889a

IF: 11.9

2019-01-01

Journal of Materials Chemistry A

Abstract:By optimizing the concentration of the substitutional defect PrMg1, Mg3.2Pr0.02Sb1.5Bi0.5 exhibits a peak zT value of 1.70 at 725 K.
Atomic Local Ordering and Alloying Effects on the Mg 3 (Sb 1- x Bi x ) 2 Thermoelectric Material

Pei Ouyang,Min-hui Yuan,Pengbing Tang,Qian Zhang,Shenghua Liu,Jing Shuai,Xiang-Guo Li

DOI: https://doi.org/10.1021/acsami.3c07801

IF: 9.5

2023-08-02

ACS Applied Materials & Interfaces

Abstract:Mg(3)(Sb(1-x)Bi(x))(2) alloy has been extensively studied in the last 5 years due to its exceptional thermoelectric (TE) performance. The absence of accurate force field for inorganic alloy compounds presents great challenges for computational studies. Here, we explore the atomic microstructure, thermal, and elastic properties of the Mg(3)(Sb(1-x)Bi(x))(2) alloy at different solution concentrations through atomic simulations with a highly accurate machine learning interatomic potential (ML-IAP)....

materials science, multidisciplinary,nanoscience & nanotechnology
Bi-Deficiency Leading to High-Performance in Mg3(Sb,Bi)2-Based Thermoelectric Materials

Jing-Wei Li,Weishu Liu,Wei Xu,Hua-Lu Zhuang,Zhijia Han,Feng Jiang,Peng Zhang,Haihua Hu,Hanbin Gao,Yilin Jiang,Bowen Cai,Jun Pei,Bin Su,Qian Li,Kei Hayashi,Hezhang Li,Yuzuru Miyazaki,Xingzhong Cao,Qiang Zheng,Jing-Feng Li

DOI: https://doi.org/10.1002/adma.202209119

2023-01-01

Abstract:Mg-3(Sb,Bi)(2) is a potential nearly-room temperature thermoelectric compound composed of earth-abundant elements. However, complex defect tuning and exceptional microstructural control are required. Prior studies have confirmed the detrimental effect of Mg vacancies (V-Mg) in Mg-3(Sb,Bi)(2). This study proposes an approach to mitigating the negative scattering effect of V-Mg by Bi deficiency, synergistically modulating the electrical and thermal transport properties to enhance the thermoelectric performance. Positron annihilation spectrometry and C-s-corrected scanning transmission electron microscopy analyses indicated that the V-Mg tends to coalesce due to the introduced Bi vacancies (V-Bi). The defects created by Bi deficiency effectively weaken the scattering of electrons from the intrinsic V-Mg and enhance phonon scattering. A peak zT of 1.82 at 773 K and high conversion efficiency of 11.3% at increment T = 473 K are achieved in the optimized composition of Mg-3(Sb,Bi)(2) by tuning the defect combination. This work demonstrates a feasible and effective approach to improving the performance of Mg-3(Sb,Bi)(2) as an emerging thermoelectric material.

Band Engineering and Crystal Field Screening in Thermoelectric Mg3Sb2

Temperature-Driven Twin Structure Formation and Electronic Structure of Epitaxially Grown Mg3Sb2 Films on Mismatched Substrates

Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance P-Type Mg3Sb2 Zintl Compounds

Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance p-Type Mg 3 Sb 2 Zintl Compounds

Revealing the temperature-driven Lifshitz transition in p -type Mg3Sb2-based thermoelectric materials

Visualizing the Mg atoms in Mg<sub>3</sub>Sb<sub>2</sub> thermoelectrics using advanced iDPC-STEM technique

Developing a Multiband Electronic Band Structure Model and Predictive Maps for Bismuth-Rich Mg 3 (Sb 1– x Bi x ) 2 Thermoelectric Materials

Significant Role of Mg Stoichiometry in Designing High Thermoelectric Performance for Mg3(Sb,Bi)2-Based N-Type Zintls.

Mg<sub>3</sub>(Bi,Sb)<sub>2</sub> single crystals towards high thermoelectric performance

Compromise between band structure and phonon scattering in efficient n-Mg3Sb2-Bi thermoelectrics

Enhancing Thermoelectric Performance of AB2Sb2-type Zintl Phase Through Band Shaping and Lattice Distortion

Rational Manipulation of Epitaxial Strains Enabled Valence Band Convergence and High Thermoelectric Performances in Mg3Sb2 Films

Bi-Deficiency Leading to High-Performance in Mg3 (Sb,Bi)2 -Based Thermoelectric Materials

Large improvement in thermoelectric performance of pressure-tuned Mg 3 Sb 2

Band convergence and phonon engineering to optimize the thermoelectric performance of CaCd 2 Sb 2

High thermoelectric performance and anisotropy studies of n-type Mg3Bi2-based single crystal

Formation of metastable cubic phase and thermoelectric properties in Mg3Bi2 films deposited by magnetron sputtering

Origin of the unique thermoelectric transport in Mg 3 (Sb,Bi) 2 : absent d -orbital bonding in crystal cohesion

The manipulation of substitutional defects for realizing high thermoelectric performance in Mg<sub>3</sub>Sb<sub>2</sub>-based Zintl compounds

Atomic Local Ordering and Alloying Effects on the Mg 3 (Sb 1- x Bi x ) 2 Thermoelectric Material

Bi-Deficiency Leading to High-Performance in Mg<sub>3</sub>(Sb,Bi)<sub>2</sub>-Based Thermoelectric Materials