Abstract:An strategy of inhibiting Mg diffusion and evaporation by forming Mg‐rich reservoir at grain boundaries is proposed to enhance the thermal stability of n‐type Mg3Sb2‐based thermoelectrics. The MgB2‐modified Mg3Sb2 exhibits negligible variation in thermoelectric performance during the 120‐hour continuous measurement at 673 K showing good thermal stability. N‐type Mg3Sb2‐based thermoelectric materials show great promise in power generation due to their mechanical robustness, low cost of Mg, and high figure of merit (ZT) over a wide range of temperatures. However, their poor thermal stability hinders their practical applications. Here, MgB2 is introduced to improve the thermal stability of n‐type Mg3Sb2. Enabled by MgB2 decomposition, extra Mg can be released into the matrix for Mg compensation thermodynamically, and secondary phases of Mg─B compounds can kinetically prevent Mg diffusion along grain boundaries. These synergetic effects inhibit the formation of Mg vacancies at elevated temperatures, thereby enhancing the thermal stability of n‐type Mg3Sb2. Consequently, the Mg3.05(Sb0.75Bi0.25)1.99Te0.01(MgB2)0.03 sample exhibits negligible variation in thermoelectric performance during the 120‐hour continuous measurement at 673 K. Moreover, the ZT of n‐type Mg3Sb2 can be maintained by adding MgB2, reaching a high average ZT of ≈1.1 within 300–723 K. An eight‐pair Mg3Sb2‐GeTe‐based thermoelectric device is also fabricated, achieving an energy conversion efficiency of ≈5.7% at a temperature difference of 438 K with good thermal stability. This work paves a new way to enhance the long‐term thermal stability of n‐type Mg3Sb2‐based alloys and other thermoelectrics for practical applications.

Formation of metastable cubic phase and thermoelectric properties in Mg3Bi2 films deposited by magnetron sputtering

High thermoelectric performance of n-type Mg3Bi2 films deposited by magnetron sputtering

Epitaxial growth and thermoelectric properties of Mg 3 Bi 2 thin films deposited by magnetron sputtering

High‐Performing Flexible Mg3Bi2 Thin‐Film Thermoelectrics

High thermoelectric performance and anisotropy studies of n-type Mg3Bi2-based single crystal

Evolution of Nanometer-Scale Microstructure within Grains and in the Intergranular Region in Thermoelectric Mg3(Sb, Bi)2 Alloys

Improved performance in Mg3Sb2/Sb hybrid films for thermoelectric generation

Plasticity in single-crystalline Mg3Bi2 thermoelectric material

Temperature-Driven Twin Structure Formation and Electronic Structure of Epitaxially Grown Mg3Sb2 Films on Mismatched Substrates

Inhibiting Mg Diffusion and Evaporation by Forming Mg‐Rich Reservoir at Grain Boundaries Improves the Thermal Stability of N‐Type Mg3Sb2 Thermoelectrics

Mg3(Bi,Sb)2 single crystals towards high thermoelectric performance

High-Performance Mg<sub>3</sub>Sb<sub>2-<i>x</i></sub>Bi<i><sub>x</sub></i> Thermoelectrics: Progress and Perspective

Effect of Composition Adjustment on the Thermoelectric Properties of Mg3Bi2-Based Thermoelectric Materials

Orientation Optimization for High Performance Mg3sb2 Thermoelectric Films Via Thermal Evaporation

Plastically Mg3(Sb,Bi)2-based thermoelectric compounds with enhanced texture via cold-deformation

Bi-Deficiency Leading to High-Performance in Mg3 (Sb,Bi)2 -Based Thermoelectric Materials

High performance of Mg3Bi1.5Sb0.5 based materials for power generation: Revealing the counter-intuitive effect of tuning Bi content on the thermoelectric properties

An improvement of thermoelectric properties for Mg3Bi2/Mg2Sn nanocomposite films by the phase interface

Improved figure of merit (z) at low temperatures for superior thermoelectric cooling in Mg3(Bi,Sb)2

A topological transition-induced giant transverse thermoelectric effect in polycrystalline Dirac semimetal Mg3Bi2

Thermoelectric Properties of Mg3(Bi,Sb)2 under Finite Temperatures and Pressures: A First-Principles Study