Large improvement in thermoelectric performance of pressure-tuned Mg 3 Sb 2

Juan Li,Shuai Zhang,Kai Han,Bing Sun,Lianzhen Cao

DOI: https://doi.org/10.1039/d1ra08930g

IF: 4.036

2022-01-01

RSC Advances

Abstract:Because of the modified electronic band structure, the thermoelectric properties of Mg 3 Sb 2 can be improved by pressure tuning.

chemistry, multidisciplinary

What problem does this paper attempt to address?

Large Improvement in Thermoelectric Performance of Pressure-Tuned Mg3Sb2.

Juan Li,Shuai Zhang,Kai Han,Bing Sun,Lianzhen Cao

DOI: https://doi.org/10.1039/d1ra08930g

IF: 4.036

2022-01-01

RSC Advances

Abstract:The Mg3Sb2-based Zintl compound is a promising candidate for a high-performance thermoelectric material with the advantage of the component elements being low cost, non-toxic and earth-abundant. Here, we investigate the influence of pressure on the electronic structure and p-type and n-type thermoelectric transport properties of Mg3Sb2 by using density functional theory and Boltzmann transport theory. The energy gaps first increase and then decrease with the increasing of pressure, and a peak value of the valley degeneracy of conduction band occurs at 4 GPa. Based on the calculated band structures, the zT (figure of merit) values of p-type Mg3Sb2 under pressure are significantly enhanced, which predominantly originates from the boosted PF (power factor) contributed by the increased carrier's relaxation time. When the carrier concentration reaches 1 × 1020 cm−3, the PF of p-type Mg3Sb2 at 4 GPa is increased by 35% relative to that of the compound at 0 GPa, thus leading to a considerably improved zT of ∼0.62 at 725 K. Under the same conditions, due to the increased density of states effective mass, the n-type Mg3Sb2 exhibits a highest PF of ∼19 μW cm−1 K−2 and a peak zT of 1.7. Therefore, pressure tuning is an effective method to improve the p-type and n-type thermoelectric transport performance of Mg3Sb2-based Zintl compounds. This work on Mg3Sb2 under pressure may provide a new mechanism for the experimenters towards the enhancement of the thermoelectric performance of materials.
Advances in Thermoelectric Mg3Sb2 and Its Derivatives

Xuemin Shi,Xiao Wang,Wen Li,Yanzhong Pei

DOI: https://doi.org/10.1002/smtd.201800022

IF: 12.4

2018-01-01

Small Methods

Abstract:AbstractOver the past couple of decades, thermoelectric Mg3Sb2 and its derivatives have attracted increasing attention for thermoelectric applications. This is enabled by the richness in composition for manipulating both electronic and thermal properties and by the intrinsic low lattice thermal conductivity. With existing efforts on these materials, the thermoelectric figure of merit has been significantly improved to compete with conventional thermoelectrics, while many of these materials keep the compositions cheap and less‐toxic elements only. Here, not only the control of defects, band structure, electronic transport properties, and lattice thermal conductivity for these materials, but also the proven strategies on transport property manipulation are summarized. These strategies are well demonstrated for advancing thermoelectric Mg3Sb2 and its derivatives, and the principles used are believed to be equally applicable for many other thermoelectric materials. In addition, perspectives for possible further advancements in this class of thermoelectric materials are shown.
Revelation of Inherently High Mobility Enables Mg3Sb2 As a Sustainable Alternative to N‐bi2te3 Thermoelectrics

Xuemin Shi,Cheng Sun,Zhonglin Bu,Xinyue Zhang,Yixuan Wu,Siqi Lin,Wen Li,Alireza Faghaninia,Anubhav Jain,Yanzhong Pei

DOI: https://doi.org/10.1002/advs.201802286

IF: 15.1

2019-01-01

Advanced Science

Abstract:Over the past years, thermoelectric Mg3Sb2 alloys particularly in n-type conduction, have attracted increasing attentions for thermoelectric applications, due to the multivalley conduction band, abundance of constituents, and less toxicity. However, the high vapor pressure, causticity of Mg, and the high melting point of Mg3Sb2 tend to cause the inclusion in the materials of boundary phases and defects that affect the transport properties. In this work, a utilization of tantalum-sealing for melting enables n-type Mg3Sb2 alloys to show a substantially higher mobility than ever reported, which can be attributed to the purification of phases and to the coarse grains. Importantly, the inherently high mobility successfully enables the thermoelectric figure of merit in optimal compositions to be highly competitive to that of commercially available n-type Bi2Te3 alloys and to be higher than that of other known n-type thermoelectrics at 300-500 K. This work reveals Mg3Sb2 alloys as a top candidate for near-room-temperature thermoelectric applications.
Band Engineering and Phonon Engineering Effectively Improve N-Type Mg3Sb2 Thermoelectric Material Properties.

Lu Yu,Si-tong Wei,Li-jun Wang,Zi-pei Zhang,Zhen Ji,Si-tong Luo,Jing-xuan Liang,Wei-yu Song,Shu-Qi Zheng

DOI: https://doi.org/10.1021/acsami.3c14155

IF: 9.5

2023-01-01

ACS Applied Materials & Interfaces

Abstract:Mg3Sb2-based thermoelectric materials can convert heat and electricity into each other, making them a promising class of environmentally friendly materials. Further improving the electrical performance while effectively reducing the thermal conductivity is a crucial issue. In this paper, under the guidance of the oneness principle calculation, we designed a thermoelectric Zintl phase based on Mg3.2Sb1.5Bi0.5 doped with Tb and Er. Calculation results show that using Tb and Er as cationic site dopants effectively improves the electrical properties and reduces the lattice thermal conductivity. Experimental results confirmed the effectiveness of codoping and effectively enhanced thermoelectric performance. The most immense ZT value obtained by the Mg3.185Tb0.01Er0.005Sb1.5Bi0.5 sample was 1.71. In addition, the average Young's modulus of the Mg3.185Tb0.01Er0.005Sb1.5Bi0.5 sample is 51.85 GPa, and the Vickers hardness is 0.99 GPa. Under the same test environment, the material was subjected to 12 cycles in the temperature range of 323-723 K, and the average power factor error range was 1.8% to 2.1%, which is of practical significance for its application in actual device scenarios.
Improvement of the Thermoelectric Properties of p-Type Mg 3 Sb 2 by Mg-Site Double Substitution

Juan Li,Kejia Liu,Xiaojing Ma,Zhongran Yang,Liqun Yi,Jun Mao,Qian Zhang

DOI: https://doi.org/10.1021/acs.inorgchem.4c00522

IF: 4.6

2024-05-02

Inorganic Chemistry

Abstract:A P-type Mg(3)Sb(2)-based Zintl phase compound has been considered a promising candidate for thermoelectric applications. Alloying, which introduces a high concentration of point defects, is particularly effective in scattering phonons and reducing lattice thermal conductivity. Herein, alloying in p-type Mg(2.995)Na(0.005)Sb(2) via the introduction of elements like Yb, Eu, Ca, and Ba was realized, and the room-temperature lattice thermal conductivity has been effectively reduced to ∼1.1 W m^(-1)...

chemistry, inorganic & nuclear
Enhancing the Thermoelectric Performance of P-Type Mg3Sb2 Via Codoping of Li and Cd

Xiaodan Tang,Bin Zhang,Xiao Zhang,Shuxia Wang,Xu Lu,Guang Han,Guoyu Wang,Xiaoyuan Zhou

DOI: https://doi.org/10.1021/acsami.9b23059

IF: 9.5

2020-01-01

ACS Applied Materials & Interfaces

Abstract:The Zintl compound Mg3Sb2 is a promising thermoelectric material with Earth-abundant components. Compared to its n-type counterpart, p-type Mg3Sb2 reveals lower dimensionless figure of merit (zT), principally due to the inferior electronic properties. Herein, p-type Mg3Sb2 materials codoped with Li and Cd have been synthesized via a ball milling plus hot pressing method, and their thermoelectric properties are systematically investigated within the temperature range 300-773 K. Li is found to be an effective hole dopant, which leads to a zT of 0.46 at 773 K in Mg2.99Li0.01Sb2 that doubles the zT of Mg3Sb2. Additional Cd doping further increases carrier mobility ascribed to the weakened polar covalent bonding and diminishes the lattice thermal conductivity simultaneously due to the introduced atomic mass contrast between Cd and Mg. Eventually, the optimized power factor combined with the reduced thermal conductivity has significantly improved the thermoelectric performance of p-type Mg3Sb2, with Mg(2.69)Li(0.01)Cd(0.5S)b(2) achieving a maximum zT of similar to 0.68 at 773 K and an average zT(ave) of similar to 0.32 over 300-773 K that compare very favorably to those of pristine Mg3Sb2. This study demonstrates that (Li, Cd) codoping is an effective strategy to enhance the thermoelectric properties of p-type Mg3Sb2 materials.
Enhanced thermoelectric performance of p -type Mg 3 Sb 2 by lithium doping and its tunability in an anionic framework

Chen Chen,Xiaofang Li,Shan Li,Xinyu Wang,Zongwei Zhang,Jiehe Sui,Feng Cao,Xingjun Liu,Qian Zhang

DOI: https://doi.org/10.1007/s10853-018-2555-2

IF: 4.5

2018-01-01

Journal of Materials Science

Abstract:Mg 3 Sb 2 -based Zintl compounds are considered as promising thermoelectric materials due to their low thermal conductivity and high Seebeck coefficient. In this paper, we studied the thermoelectric properties of p -type lithium (Li)-doped Mg 3 Sb 2 prepared by ball milling and hot pressing. A maximum ZT value ~ 0.6 at about 773 K was achieved in Mg 2.975 Li 0.025 Sb 2 , which was ascribed to the increased carrier concentration by Li doping. Mixed scattering mechanism is dominated at lower temperature, yielding higher carrier mobility. Isoelectronic substitution of Zn on the Mg site further increased the electrical conductivity by narrowing the band gap and decreased the lattice thermal conductivity by double substitution, contributing to an enhanced average ZT in Mg 2.475 Zn 0.5 Li 0.025 Sb 2 .
Improvement of the Thermoelectric Properties of P-Type Mg3Sb2 by Mg-Site Double Substitution

Juan Li,Kejia Liu,Xiaojing Ma,Zhongran Yang,Liqun Yi,Jun Mao,Qian Zhang

DOI: https://doi.org/10.1021/acs.inorgchem.4c00522

IF: 4.6

2024-01-01

Inorganic Chemistry

Abstract:A P-type Mg3Sb2-based Zintl phase compound has been considered a promising candidate for thermoelectric applications. Alloying, which introduces a high concentration of point defects, is particularly effective in scattering phonons and reducing lattice thermal conductivity. Herein, alloying in p-type Mg2.995Na0.005Sb2 via the introduction of elements like Yb, Eu, Ca, and Ba was realized, and the room-temperature lattice thermal conductivity has been effectively reduced to similar to 1.1 W m(-1) K-1. To further intensify the phonon scattering, two groups of elements (Eu and Cd, and Yb and Cd) were chosen for heavy alloying at the Mg site, and the lattice thermal conductivity of Mg1.49Eu0.5Cd1Na0.01Sb2 was further reduced to similar to 0.45 W m(-1) K-1. Eventually, a peak zT as high as similar to 1.0 was achieved at 773 K, and the compound outperforms the previously reported p-type Mg3Sb2 compounds.
Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance p-Type Mg 3 Sb 2 Zintl Compounds

Jinsuo Hu,Jianbo Zhu,Fengkai Guo,Haixu Qin,Yijie Liu,Qian Zhang,Zihang Liu,Wei Cai,Jiehe Sui

DOI: https://doi.org/10.34133/2022/9842949

IF: 11

2022-04-29

Research

Abstract:Environmentally friendly Mg 3 Sb 2 -based materials have drawn intensive attention owing to their promising thermoelectric performance. In this work, the electrical properties of p-type Mg 3 Sb 2 are dramatically optimized by the regulation of Mg deficiency. Then, we, for the first time, found that Zn substitution at the Mg2 site leads to the alignment of p x , y and p z orbital, resulting in a high band degeneracy and the dramatically enhanced Seebeck coefficient, demonstrated by the DFT calculations and electronic properties measurement. Moreover, Zn alloying decreases Mg1 (Zn) vacancies formation energy and in turn increases Mg (Zn) vacancies and optimizes the carrier concentration. Simultaneously, the Mg/Zn substitutions, Mg vacancies, and porosity structure suppress the phonon transport in a broader frequency range, leading to a low lattice thermal conductivity of ~0.47 W m -1 K -1 at 773 K. Finally, a high ZT of ~0.87 at 773 K was obtained for Mg 1.95 Na 0.01 Zn 1 Sb 2 , exceeding most of the previously reported p-type Mg 3 Sb 2 compounds. Our results further demonstrate the promising prospects of p-type Mg 3 Sb 2 -based material in the field of mid-temperature heat recovery.

multidisciplinary sciences
Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance P-Type Mg3Sb2 Zintl Compounds

Jinsuo Hu,Jianbo Zhu,Fengkai Guo,Haixu Qin,Yijie Liu,Qian Zhang,Zihang Liu,Wei Cai,Jiehe Sui

DOI: https://doi.org/10.34133/2022/9842949

IF: 11

2022-01-01

Research

Abstract:Environmentally friendly Mg3Sb2-based materials have drawn intensive attention owing to their promising thermoelectric performance. In this work, the electrical properties of p-type Mg3Sb2 are dramatically optimized by the regulation of Mg deficiency. Then, we, for the first time, found that Zn substitution at the Mg2 site leads to the alignment of px,y and pz orbital, resulting in a high band degeneracy and the dramatically enhanced Seebeck coefficient, demonstrated by the DFT calculations and electronic properties measurement. Moreover, Zn alloying decreases Mg1 (Zn) vacancies formation energy and in turn increases Mg (Zn) vacancies and optimizes the carrier concentration. Simultaneously, the Mg/Zn substitutions, Mg vacancies, and porosity structure suppress the phonon transport in a broader frequency range, leading to a low lattice thermal conductivity of ~0.47 W m-1 K-1 at 773 K. Finally, a high ZT of ~0.87 at 773 K was obtained for Mg1.95Na0.01Zn1Sb2, exceeding most of the previously reported p-type Mg3Sb2 compounds. Our results further demonstrate the promising prospects of p-type Mg3Sb2-based material in the field of mid-temperature heat recovery.
Thermoelectric Properties of Mg3(Bi,Sb)2 under Finite Temperatures and Pressures: A First-Principles Study

Qing Peng,Xinjie Ma,Xiaoyu Yang,Xiaoze Yuan,Xiao-Jia Chen

DOI: https://doi.org/10.3390/nano14010084

IF: 5.3

2023-12-28

Nanomaterials

Abstract:Mg3Bi2−vSbv (0 ≤ v ≤ 2) is a class of promising thermoelectric materials that have a high thermoelectric performance around room temperatures, whereas their thermoelectric properties under pressures and temperatures are still illusive. In this study, we examined the influence of pressure, temperature, and carrier concentration on the thermoelectric properties of Mg3Bi2−vSbv using first-principle calculations accompanied with Boltzmann transport equations method. There is a decrease in the lattice thermal conductivity of Mg3Sb2 (i.e., v = 2) with increasing pressure. For a general Mg3Bi2−vSbv system, power factors are more effectively improved by n-type doping where electrons are the primary carriers over holes in n-type doping, and can be further enhanced by applied pressure. The figure of merit (zT) exhibits a positive correlation with temperature. A high zT value of 1.53 can be achieved by synergistically tuning the temperature, pressure, and carrier concentration in Mg3Sb2. This study offers valuable insights into the tailoring and optimization of the thermoelectric properties of Mg3Bi2−vSbv.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Extraordinary thermoelectric performance, thermal stability and mechanical properties of n-type Mg3Sb1.5Bi0.5 through multi-dopants at interstitial site

Feng Jiang,Tao Feng,Yongbin Zhu,Zhijia Han,Rui Shu,Chen Chen,Yiwen Zhang,Chengliang Xia,Xinzhi Wu,Hulei Yu,Chengyan Liu,Yue Chen,Weishu Liu

DOI: https://doi.org/10.1016/j.mtphys.2022.100835

IF: 11.021

2022-10-01

Materials Today Physics

Abstract:Mg3Sb2-based thermoelectric materials have attracted much interest since the discovery of their excellent n-type thermoelectric performance with excess Mg content and proper dopant. Herein, we proposed a doping diagram for Mg3Sb2-based material in a binary parameters space of electronegativity difference and atomic radius difference of extrinsic elements with Mg atom. Based on this doping diagram, we designed a multiple interstitial doped TMx:Mg3Sb1.5Bi0.5 (TM = CrMnFeCoCu) material, and achieved a high dimensionless figure of merit value of 0.76 at room temperature and 1.83 at 500 °C, respectively. The multiple interstitial dopants significantly suppress the formation of Mg vacancy, which is of great importance in protecting the electrical transport channel and improving the thermal stability. Besides, the mechanical properties are also enhanced due to the random distribution of elements in the matrix, impeding the migration of dislocations. Our work verifies the benefits of maximized sub-lattice disordering through the multi-elements doping strategy in the Mg3Sb1.5Bi0.5 material.

materials science, multidisciplinary,physics, applied
Effect of Composition Adjustment on the Thermoelectric Properties of Mg3Bi2-Based Thermoelectric Materials

Jianbao Yang,Zhibin Wang,Hong Zhao,Xinyu Luo,Wenyuan Han,Hao Wang,Linghao Meng,Xinqi She,Anlong Quan,Yixin Peng,Guoji Cai,Yi Liu,Yong Tang,Bo Feng

DOI: https://doi.org/10.3390/mi14101844

IF: 3.4

2023-09-28

Micromachines

Abstract:Thermoelectric materials are widely used in refrigeration chips, thermal power generation, catalysis and other fields. Mg3Bi2-based thermoelectric material is one of the most promising thermoelectric materials. Herein, the Mg3Bi2-based samples were prepared by high temperature synthesis, and the influence of Mg/Sb content on the electrical transport properties and semi-conductivity/semi-metallicity of the materials has been studied. The results indicate that the efficiency of introducing electrons from excess Mg prepared by high temperature synthesis is lower than that introduced by ball milling, due to the high vapor pressure of Mg. The doping of Sb/Te at the Bi site would make it easier for the material to change from p-type conduction to n-type conduction. With the increase in Mg content, the semi-conductivity of the material becomes weaker, the semi-metallicity becomes stronger, and the corresponding conductivity increases. With the increase in Sb content, the samples exhibit the opposite changes. The highest power factor of ~1.98 mWm−1K−2 is obtained from the Mg3.55Bi1.27Sb0.7Te0.03 sample.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Pressure-Induced Semimetal-Semiconductor Transition And Enhancement Of Thermoelectric Performance In Alpha-Mgagsb

Naihua Miao,Jian Zhou,Baisheng Sa,Bin Xu,Zhimei Sun

DOI: https://doi.org/10.1063/1.4952598

IF: 4

2016-01-01

Applied Physics Letters

Abstract:Comparable to bismuth telluride, alpha-MgAgSb-based materials (alpha-MAS) have been investigated recently as promising candidates for room-temperature thermoelectric energy harvesting and thus various efforts have been devoted to the enhancement of their thermoelectric performance. By utilizing first-principles density functional calculations and Boltzmann transport theory, we report that the thermoelectric properties of alpha-MAS can be dramatically improved with the application of hydrostatic pressure. This is attributed to a pressure-induced semimetal to semiconductor transition in alpha-MAS. With the benefit of this pressure-tunable behaviour, the Seebeck coefficient of alpha-MAS can be manipulated flexibly. Furthermore, we found that, through the combination of applying pressure and p-type doping, the optimal thermoelectric power factor and figure of merit of alpha-MAS can be enhanced remarkably by 110% at 550K compared with the intrinsic case. Our results provide an interesting insight and a feasible guideline for the improvement of the thermoelectric properties of alpha-MAS related materials. Published by AIP Publishing.
Enhanced Thermoelectric Performance in P-Type Mg 3 Sb 2 Via Lithium Doping

Hao Wang,Jin Chen,Tianqi Lu,Kunjie Zhu,Shan Li,Jun Liu,Huaizhou Zhao

DOI: https://doi.org/10.1088/1674-1056/27/4/047212

2018-01-01

Chinese Physics B

Abstract:The Zintl compound Mg3Sb2 has been recently identified as promising thermoelectric material owing to its high thermoelectric performance and cost-effective, nontoxicity and environment friendly characteristics. However, the intrinsically p-type Mg3Sb2 shows low figure of merit (zT = 0.23 at 723 K) for its poor electrical conductivity. In this study, a series of Mg3-xLixSb2 bulk materials have been prepared by high-energy ball milling and spark plasma sintering (SPS) process. Electrical transport measurements on these materials revealed significant improvement on the power factor with respect to the undoped sample, which can be essentially attributed to the increased carrier concentration, leading to a maximum zT of 0.59 at 723 K with the optimum doping level x = 0.01. Additionally, the engineering zT and energy conversion efficiency are calculated to be 0.235 and 4.89%, respectively. To our best knowledge, those are the highest values of all reported p-type Mg3Sb2-based compounds with single element doping.
Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Zhe Xu,Xiao-Lei Shi,Yibo Zhang,Jisheng Liang,Meng Li,Chengyan Liu,Lei Miao,Siqi Liu,Shihao Wang,Qi Zhou,Jie Gao,Zhongwei Zhang,Wei-Di Liu,Ying Peng,Jun-Liang Chen,Zhi-Gang Chen

DOI: https://doi.org/10.1016/j.cej.2024.155147

IF: 15.1

2024-01-01

Chemical Engineering Journal

Abstract:Owing to the non-toxicity and low cost, Mg3Sb2-based Zintls are promising candidates for mid-temperature thermoelectric applications. However, the thermoelectric performance of p-type Mg3Sb2 is significantly lower than that of n-type ones. Here, we achieve simultaneous optimization of the band structure and enhanced phonon scattering through the combined doping of Na at the cation site and Bi at the anion site, leading to a competitive figure of merit, ZT of 0.73 at 773 K and a maximum theoretical energy conversion efficiency of 6.5 % at a temperature difference of 450 K. First-principles calculations indicate that Na and Bi co-doping effectively narrows the band gap and shifts the Fermi level into the valence band, thereby increasing the hole carrier concentration. This ensures a relatively high Seebeck coefficient and improved electrical conductivity, resulting in an excellent power factor of 7.5 mu W cm(-1) K-2. Additionally, by adjusting the amount of Bi nanoprecipitates in the matrix, the heterogeneous interfaces significantly enhance phonon scattering and markedly reduce the lattice thermal conductivity (0.52 W m(-1) K-1), collectively leading to the high thermoelectric performance. Furthermore, by pairing n-type Mg3.18Y0.02Sb1.5Bi0.49Se0.01, a double-leg thermoelectric device achieves an energy conversion efficiency of 4.1 % with a temperature difference of 390 K.
Topological Electronic Transition Contributing to Improved Thermoelectric Performance in p-Type Mg3Sb2- xBix Solid Solutions

Sen Xie,Xiaolin Wan,Yasong Wu,Chunxia Li,Fan Yan,Yujie Ouyang,Haoran Ge,Xianda Li,Yong Liu,Rui Wang,Michael Y Toriyama,G Jeffrey Snyder,Jiong Yang,Qingjie Zhang,Wei Liu,Xinfeng Tang

DOI: https://doi.org/10.1002/adma.202400845

Abstract:Topological electronic transition is the very promising strategy for achieving high band degeneracy (NV) and for optimizing thermoelectric performance. Herein, this work verifies in p-type Mg3Sb2- xBix that topological electronic transition could be the key mechanism responsible for elevating the NV of valence band edge from 1 to 6, leading to much improved thermoelectric performance. Through comprehensive spectroscopy characterizations and theoretical calculations of electronic structures, the topological electronic transition from trivial semiconductor is unambiguously demonstrated to topological semimetal of Mg3Sb2- xBix with increasing the Bi content, due to the strong spin-orbit coupling of Bi and the band inversion. The distinct evolution of Fermi surface configuration and the multivalley valence band edge with NV of 6 are discovered in the Bi-rich compositions, while a peculiar two-step band inversion is revealed for the first time in the end compound Mg3Bi2. As a result, the optimal p-type Mg3Sb0.5Bi1.5 simultaneously obtains a positive bandgap and high NV of 6, and thus acquires the largest thermoelectric power factor of 3.54 and 6.93 µW cm-1 K-2 at 300 and 575 K, respectively, outperforming the values in other compositions. This work provides important guidance on improving thermoelectric performance of p-type Mg3Sb2- xBix utilizing the topological electronic transition.
Boosting room-temperature thermoelectric performance of Mg 3 Sb 1.5 Bi 0.5 material through breaking the contradiction between carrier concentration and carrier mobility

Feng Jiang,Xinzhi Wu,Yongbin Zhu,Chengliang Xia,Zhijia Han,Hulei Yu,Chen Chen,Tao Feng,Jun Mao,Yue Chen,Weishu Liu

DOI: https://doi.org/10.1016/j.actamat.2023.119636

IF: 9.4

2023-12-29

Acta Materialia

Abstract:Recently, low-cost Mg 3 Sb 2- y Bi y -based materials with high performance near room temperatures have been reported, which are considered to be promising candidates for replacing commercial Bi 2 Te 3 -based materials. Herein, we report a high power factor of ∼3000 μW m −1 K −1 and a ZT value of 0.82 at room temperature in Ti 0.05 Mg 3.15 Sb 1.5 Bi 0.49 Te 0.01 . Ti dopant entering into the Mg1 sublattice slightly increases the carrier concentration by the introduction of impurity states and enhances the carrier mobility by the promotion of grain size growth. The two-donor doping strategy breaks the contradiction between carrier concentration and carrier mobility, thus significantly improving the electrical transport properties near room temperatures. In addition, the introduction of defects by Ti dopant contributes to the decreased lattice thermal conductivity. Consequently, a ZT avg value of 1.19 is obtained at 50 - 250 °C, ranking the top among reported n-type thermoelectric materials. Moreover, the as-fabricated single-leg device shows an high engineering efficiency considering the radiation calibration, i.e., 7.2% and 11.8% at temperature differences of 250 °C and 500 °C with T c = 0 °C, respectively, demonstrating the great potential of substituting the commercial Bi 2 Te 3 -family.

materials science, multidisciplinary,metallurgy & metallurgical engineering
Outstanding Room-Temperature Thermoelectric Performance of N-Type Mg3Bi2-Based Compounds Through Synergistically Combined Band Engineering Approaches

Hyunyong Cho,Song Yi Back,Naoki Sato,Zihang Liu,Weihong Gao,Longquan Wang,Hieu Duy Nguyen,Naoyuki Kawamoto,Takao Mori

DOI: https://doi.org/10.1002/adfm.202407017

IF: 19

2024-01-01

Advanced Functional Materials

Abstract:Thermoelectric cooling materials based on Bi2Te3 have a long history of unsurpassed performance near room temperature. Recently, research into price-competitive Mg-3(Bi, Sb)(2)-based materials are focused on replacing traditional cooling materials. Here, the thermoelectric properties of Mg(3.2)Bi(1.998-x)SbxTe(0.002)Cu(0.005) (x = 0.0, 0.1, 0.2, 0.3, 0.4, and 0.5) polycrystalline compounds are investigated. In all temperature regions, electrical resistivity and Seebeck coefficient are increased with Sb concentration. The electronic transport properties of Sb-alloyed compounds are maximized by synergistically combined band engineering approaches such as band structure change caused by lattice strain, increased electronic density of states, and chemical potential shift, leading to exceptionally high-power factor values of over 3.0 mW m(-1) K-2 at room temperature. Furthermore, with increasing Sb content, thermal conductivity values are systematically reduced due to the promotion of alloy scattering of phonons and suppression of the bipolar contribution. Consequently, these multiple approaches significantly enhance thermoelectric performance, resulting in an enhancement of thermoelectric figure-of-merit zT above 1.1 at 348-423 K. Additionally, a zT(avg) of 1.1 is recorded at 300-450 K, making it an unrivaled value among the reported n-type Mg3Bi2-based thermoelectric materials. Overall, this work demonstrates that Mg3Bi2-based materials are more promising for thermoelectric cooling applications compared to Bi2Te3-based materials.
Significant Role of Mg Stoichiometry in Designing High Thermoelectric Performance for Mg3(Sb,Bi)2-Based N-Type Zintls.

Jing Shuai,Binghui Ge,Jun Mao,Shaowei Song,Yumei Wang,Zhifeng Ren

DOI: https://doi.org/10.1021/jacs.7b12767

IF: 15

2018-01-01

Journal of the American Chemical Society

Abstract:Complex structures with versatile chemistry provide considerable chemical tunability of the transport properties. Good thermoelectric materials are generally extrinsically doped semiconductors with optimal carrier concentrations, while charged intrinsic defects (e.g., vacancies, interstitials) can also adjust the carriers, even in the compounds with no apparent deviation from a stoichiometric nominal composition. Here we report that in Zintl compounds Mg3+xSb1.5Bi0.5, the carrier concentration can be tuned from p-type to n-type by simply altering the initial Mg concentration. The spherical-aberration-corrected (CS-corrected) high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) and energy-dispersive X-ray spectroscopy (EDX) mapping analysis show that the excess Mg would form a separate Mg-rich phase after Mg vacancies have been essentially compensated. Additionally, a slight Te doping at Bi site on Mg3.025Sb1.5Bi0.5 has enabled good n-type thermoelectric properties, which is comparable to the Te-doped Mg-rich sample. The actual final composition of Mg3.025Sb1.5Bi0.5 analyzed by EPMA is also close to the stoichiometry Mg3Sb1.5Bi0.5, answering the open question whether excess Mg is prerequisite to realize exceptionally high n-type thermoelectric performance by different sample preparation methods. The motivation for this work is first to understand the important role of vacancy and then to guide for discovering more promising n-type Zintl thermoelectric materials.

Large improvement in thermoelectric performance of pressure-tuned Mg 3 Sb 2

Large Improvement in Thermoelectric Performance of Pressure-Tuned Mg3Sb2.

Advances in Thermoelectric Mg3Sb2 and Its Derivatives

Revelation of Inherently High Mobility Enables Mg3Sb2 As a Sustainable Alternative to N‐bi2te3 Thermoelectrics

Band Engineering and Phonon Engineering Effectively Improve N-Type Mg3Sb2 Thermoelectric Material Properties.

Improvement of the Thermoelectric Properties of p-Type Mg 3 Sb 2 by Mg-Site Double Substitution

Enhancing the Thermoelectric Performance of P-Type Mg3Sb2 Via Codoping of Li and Cd

Enhanced thermoelectric performance of p -type Mg 3 Sb 2 by lithium doping and its tunability in an anionic framework

Improvement of the Thermoelectric Properties of P-Type Mg3Sb2 by Mg-Site Double Substitution

Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance p-Type Mg 3 Sb 2 Zintl Compounds

Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance P-Type Mg3Sb2 Zintl Compounds

Thermoelectric Properties of Mg3(Bi,Sb)2 under Finite Temperatures and Pressures: A First-Principles Study

Extraordinary thermoelectric performance, thermal stability and mechanical properties of n-type Mg3Sb1.5Bi0.5 through multi-dopants at interstitial site

Effect of Composition Adjustment on the Thermoelectric Properties of Mg3Bi2-Based Thermoelectric Materials

Pressure-Induced Semimetal-Semiconductor Transition And Enhancement Of Thermoelectric Performance In Alpha-Mgagsb

Enhanced Thermoelectric Performance in P-Type Mg 3 Sb 2 Via Lithium Doping

Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Topological Electronic Transition Contributing to Improved Thermoelectric Performance in p-Type Mg3Sb2- xBix Solid Solutions

Boosting room-temperature thermoelectric performance of Mg 3 Sb 1.5 Bi 0.5 material through breaking the contradiction between carrier concentration and carrier mobility

Outstanding Room-Temperature Thermoelectric Performance of N-Type Mg3Bi2-Based Compounds Through Synergistically Combined Band Engineering Approaches

Significant Role of Mg Stoichiometry in Designing High Thermoelectric Performance for Mg3(Sb,Bi)2-Based N-Type Zintls.