Precision Construction of High-Efficiency Heterojunction Polymer Memory Devices Via Electrochemical Polymerization

Xiangyu Tian,Zhizheng Zhao,Dongqi Li,Bin Zhang,Yu Chen
DOI: https://doi.org/10.1016/j.orgel.2019.03.026
IF: 3.868
2019-01-01
Organic Electronics
Abstract:Heterojunctions can be combined together in a device to form heterostructures used in high-speed-and opto-electronics. By using electrochemical polymerization approach, a heterojunction polymer memory device with a configuration of Al/PTDI/PBTP/ITO, in which poly(7H-[1,2,5] thiadiazolo [3,4-e] isoindole)(PTDI) was used as electron-withdrawing layer, while poly(2H-benzo[4,5] thieno[2,3-c] pyrrole) (PBTP) as electron-donating layer, has been successfully manufactured. A clear indication of the deposition of the polymer film on the electrode surface lies in the expansion of the sweeping voltage window, which can be defined as the difference in voltage between the anodic and cathodic waves (Delta vertical bar V-anodic wave -V-cathodic wave vertical bar), with increasing the number of sweeping cycles. The as-prepared device exhibits very good nonvolatile rewritable memory performance, with a small turn-on voltage of -0.75 V and an ON/OFF current ratio of 2 x 10(4).
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