Abstract:The D-A structured small-molecule-based resistive random-access memory (ReRAM) device has been well-researched in the last decade, and the switching mechanism was mainly induced by the intramolecular/intermolecular charge transfer processes from the donors to the acceptors. However, in the previous work, some small molecules with pristine electron acceptors in the backbone could still show the typical memory behaviors, of which the switching mechanism is still ambiguous. In this work, two 1,2,4,5-tetrazine based n-type small-molecular isomers, 2-DPTZ and 4-DPTZ, with the same electron acceptor, 1,2,4,5-tetrazine and pyridine, are chosen to investigate the isomeric effects on molecular packing, switching mechanism, and memory performance. Because of the abundant nitrogen atoms with a localized lone pair of electrons in the sp2 orbital, 2-DPTZ and 4-DPTZ compounds could self-assemble into a long-range ordered molecular packing through intermolecular C-H...N interactions, affording effective transporting tunnels for charge-carrier transport. As expected, the sandwich-structured ITO/2-DPTZ or 4-DPTZ/Al memory devices both showed binary memory characteristics, with 2-DPTZ based memory devices showing the write once read many times (WORM) memory behavior and 4-DPTZ based memory devices having the negative differential resistance (NDR) memory performance. These distinct ReRAM properties arose from the different morphologies of 2-DPTZ and 4-DPTZ films that were induced by the different packing styles between the adjacent molecules, as confirmed by X-ray diffraction (XRD) and tapping-mode atomic force microscopy (AFM) height images. Most importantly, the switching mechanism was thought to be attributed to the injected electrons that reduced the neutral molecules of 2-DPTZ and 4-DPTZ to their corresponding anion radicals. Thus, this present work helps us better understand the conducting mechanism of small molecules with pristine electron acceptors in the backbone and provides a supplementary guideline for designing multilevel small molecules to match the structure-stacking-property relationship.

Improving the Electrical Memory Performance of Pyrazoline Moiety Via the Preparation of Its Hyperbranched Copolymer

Tunable Memory Performances of the Porphyrin Terminated Hyperbranched Polyimides

Inserting Phenylethynyl Linker into Triphenylamine-Based Hyperbranched Polyimide for Effectively Tuning Memory Performance

Hyperbranched Polyimide with Triazole Core Structure for Nonvolatile Resistive Switching Memory

Organic Memory Device and Synaptic Simulation Based on Indacenodithienothiophene (IDTT) Copolymers with Improved Planarity

Effective Transport Tunnels Achieved by 1,2,4,5-Tetrazine-Induced Intermolecular C–H...N Interaction and Anion Radicals for Stable ReRAM Performance

Polydopamine Film Self‐Assembled at Air/Water Interface for Organic Electronic Memory Devices

Effective Transport Tunnels Achieved by 1,2,4,5-Tetrazine-Induced Intermolecular C-H center dot center dot center dot N Interaction and Anion Radicals for Stable ReRAM Performance

A multilevel memory based on proton-doped polyazomethine with an excellent uniformity in resistive switching.

Molecular-Potential and Redox Coregulated Cathodic Electrosynthesis Toward Ionic Azulene-Based Thin Films for Organic Memristors.

Nonvolatile Write-Once Read-Many-Times Memory Behaviors Of Polyimides Containing Tetraphenyl Fluorene Core And The Pendant Triphenylamine Or Carbazole Moieties

Synthesis and non-volatile electrical memory characteristics of triphenylamine-based polyimides with flexibility segments

Synergy Effect of Porphyrin Units and Alkynyl Π Bridges Tunes the Memory Behavior and Threshold Voltage of Hyperbranched Polyimides

High Performance Resistive Switching Memory Organic Films Prepared Through PPy Growing on Graphene Oxide Substrate

Rewritable and non-volatile memory effects based on polyimides containing pendant carbazole and triphenylamine groups

Precision Construction of High-Efficiency Heterojunction Polymer Memory Devices Via Electrochemical Polymerization

Building Uniformly Structured Polymer Memristors Via a 2D Conjugation Strategy for Neuromorphic Computing.

Different interactions between a metal electrode and an organic layer and their different electrical bistability performances

Improving the Long‐Term Stability of BPQD‐Based Memory Device via Modification with Polyvinylpyrrolidone‐Grafted Polydopamine

A Conjugated Polymer Bearing Perylenediimide (PDI) and Ferrocene (Fc) Exhibiting Stable Data‐Storage Performance

In-Situ Surface Modification of ITO Substrate Via Bio-Inspired Mussel Chemistry for Organic Memory Devices