Anomalous Formation of Micrometer-Thick Amorphous Oxide Surficial Layers During High-Temperature Oxidation of ZrAl2

Zhangping Hu,Yifei Xu,Yuanyuan Chen,Peter Schuetzenduebe,Jiangyong Wang,Yuan Huang,Yongchang Liu,Zumin Wang
DOI: https://doi.org/10.1016/j.jmst.2019.02.005
2019-01-01
Abstract:The thermal oxidation of ZrAl2 in the temperature range of 550-750 degrees C in pure oxygen has been investigated by a combinational experimental approach using X-ray diffraction, scanning electron microscopy/energy dispersive spectrometer, Auger electron spectroscopy and cross-sectional transmission electron microscopy. The thermal oxidation leads to the growth of anomalously thick (up to 4.5 mu m) amorphous (Zr0.33Al0.67)O-1.66 surficial layers at temperatures as high as 750 degrees C. The oxidation kinetics obeys a parabolic law with an activation energy of 143 kJ/mol. The underlying mechanism for the formation of such micrometer-thick amorphous oxide surficial layers has been discussed on the basis of interface thermodynamics and the occurrence of high interface stability associated with a synchronous oxidation of Al and Zr elements. (C) 2019 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
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