Human Hair Keratin for Physically Transient Resistive Switching Memory Devices

Qiqi Lin,Shilei Hao,Wei Hu,Ming Wang,Zhigang Zang,Linna Zhu,Juan Du,Xiaosheng Tang

DOI: https://doi.org/10.1039/c8tc05334k

IF: 6.4

2019-01-01

Journal of Materials Chemistry C

Abstract:A physically transient non-volatile memory device made of keratin exhibits great resistive switching performance.

What problem does this paper attempt to address?

A sustainable resistive switching memory device based on organic keratin extracted from hair

Bolin Guo,Bai Sun,Wentao Hou,Yuanzheng Chen,Shouhui Zhu,Suangsuo Mao,Liang Zheng,Ming Lei,Bing Li,Guoqiang Fu

DOI: https://doi.org/10.1039/c8ra10643f

2019-04-23

Abstract:It is the consensus of researchers that the reuse of natural resources is an effective way to solve the problems of environmental pollution, waste and overcapacity. Moreover, compared with the case of inorganic materials, the renewability of natural biomaterials has great prominent advantages. In this study, keratin, which was first extracted from hair due to its high content in hair, was chosen as a functional layer for the fabrication of a resistance switching device with the Ag/keratin/ITO structure; in this device, a stable resistive switching memory behavior with good retention characteristic was observed. Via mechanism analysis, it is expected that there is hopping conduction at low biases, and the formation of a conductive filament occurs at high biases. Furthermore, our device exhibited a stable switching behavior with different conductive materials (Ti and FTO) as bottom electrodes, and the influence of Ag and graphite conductive nanoparticles (NPs) doped into the keratin layer on the switching performance of the device was also investigated. This study not only suggests that keratin is a potential biomaterial for the preparation of memory devices, but also provides a promising route for the fabrication of bio-electronic devices with non-toxicity, degradability, sustainability etc.
Resistive Switching: Physically Transient Resistive Switching Memory Based on Silk Protein (small 20/2016)

Hong Wang,Bowen Zhu,Xiaohua Ma,Yue Hao,Xiao Chen

DOI: https://doi.org/10.1002/smll.201670104

IF: 13.3

2016-01-01

Small

Abstract:On page 2715, physically transient resistive switching memory based on silk fibroin is demonstrated by Y. Hao, X. Chen, and co-workers. The memory devices can be absolutely dissolved in deionized water or phosphate-buffered saline in 2 hours. The transient devices have the potential for application in secure data storage systems and biocompatible electronics.
Transient Form of Polyvinyl Alcohol-Based Devices with Configurable Resistive Switching Behavior for Security Neuromorphic Computing

Jing Sun,Zhan Wang,Saisai Wang,Yaxiong Cao,Haixia Gao,Hong Wang,Xiaohua Ma,Yue Hao

DOI: https://doi.org/10.1063/5.0146341

IF: 4

2023-01-01

Applied Physics Letters

Abstract:Physically transient resistive switching devices, a form of memory devices with the ability of achieving physical disappearance in a controllable manner, hold tremendous potentials in multiple security applications. Herein, we demonstrated a physically transient form of memristive device composed of Ag/polyvinyl alcohol/W with configurable resistive switching functionality for security neuromorphic computing. The resistive switching type of the transient device could be modulated effectively by controlling the compliance current during the set process, which was well interpreted by the filament model. Typical synaptic functions pertained to short-term plasticity (STP) and its transition from STP to long-term plasticity were vividly mimicked in this transient memristive device. Importantly, both the synaptic functions and physical form of the transient devices were capable of disappearing instantly upon immersing in de-ionized water, and the dissolution characteristics of the constituent transient materials were investigated experimentally to reveal the degradation mechanism of the device. This transient form of artificial synapse provides foreseeing perspectives on information security enhancement for neuromorphic computing systems.
Transient Resistive Switching Memory of CsPbBr3 Thin Films

Qiqi Lin,Wei Hu,Zhigang Zang,Miao Zhou,Juan Du,Ming Wang,Shuai Han,Xiaosheng Tang

DOI: https://doi.org/10.1002/aelm.201700596

IF: 6.2

2018-01-01

Advanced Electronic Materials

Abstract:Recently, transient electronic devices play an indispensable role in modern disposable electronics and create potential application fields that cannot be addressed with conventional electronic devices or systems. However, the choice of transient materials has some limitations. It is therefore of great significance to explore transient electrodes, materials, and substrates that can undergo rapid and complete degradation on demand. In this work, the CsPbBr3 thin films as the switching layer are utilized to implement transient memory devices with a flexible Ag/CsPbBr3/PEDOT:PSS/ITO structure. This flexible nonvolatile memory device exhibits reproducible resistive switching performance, uniform switching voltages, concentrated distributions of high and low resistance states, and good mechanical stability over 50 bending times. The elemental mapping images of the memory device reveal that the resistive switching mechanism is interpreted through electrochemical formation/dissolution of metallic Ag filaments in CsPbBr3 layer. More importantly, it is demonstrated that the CsPbBr3 films and memory device can be dissolved rapidly in deionized water within 60 s, showing the transient characteristics. In addition, the optical and electrical properties disappear completely after the device dissolved in deionized water. This work demonstrates that the all‐inorganic perovskite CsPbBr3‐based transient memory devices have great potential for applications in secure data storage systems and disposable electronics.
Biodegradable and Flexible Resistive Memory for Transient Electronics

Xinglong Ji,Li Song,Shuai Zhong,Yu Jiang,Kian Guan Lim,Chao Wang,Rong Zhao

DOI: https://doi.org/10.1021/acs.jpcc.8b03075

2018-01-01

The Journal of Physical Chemistry C

Abstract:Physically transient electronics have attracted increasing attention recently due to their potential as the basis for building "green" electronics and biomedical devices. In the development of transient devices for biomedical applications, however, the dilemma between the strictly required biodegradability and device performance has brought great difficulties to the material selection. In this paper, we introduced silk fibroin as dielectric layer to fabricate biodegradable resistive memory devices. Comprising a W/silk fibroin/Mg sandwich structure, stable bipolar resistive switching behavior with good repeatability and device variability was obtained, surpassing most organic resistive memory and comparable to inorganic resistive memory. The carrier-transport evolution process was carefully examined to reveal the mechanism behind resistive switching. A switching model regarding the formation of metallic conductive filament was proposed by considering both the nature of silk fibroin dielectric layer and the key role of active metal electrode. Furthermore, the solubility test in phosphate-buffered saline indicates the device exhibiting physically transient behavior and good biodegradability. Good mechanical property and flexibility were also demonstrated through electrical testing under different bending conditions. These results suggest that our device is a promising memory element candidate for constructing transient electronic system, especially for biomedical applications.
Ultra-Lightweight Resistive Switching Memory Devices Based on Silk Fibroin.

Hong Wang,Bowen Zhu,Hua Wang,Xiaohua Ma,Yue Hao,Xiaodong Chen

DOI: https://doi.org/10.1002/smll.201600893

IF: 13.3

2016-01-01

Small

Abstract:Ultra-lightweight resistive switching memory based on protein has been demonstrated. The memory foil is 0.4 mg cm(-2), which is 320-fold lighter than silicon substrate, 20-fold lighter than office paper and can be sustained by a human hair. Additionally, high resistance OFF/ON ratio of 10(5), retention time of 10(4) s, and excellent flexibility (bending radius of 800 mu m) have been achieved.
Enhancing the Resistive Switching Performance in a Physically Transient Memristor by Doping <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi>Mo</mml:mi><mml:mi mathvariant="normal">S</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:ms

Yizhen Li,Xinhui Zhao,Ke Chang,Yiru Niu,Xinna Yu,Hui Wang

DOI: https://doi.org/10.1103/physrevapplied.17.034007

IF: 4.6

2022-01-01

Physical Review Applied

Abstract:Resistive random-access memory has attracted tremendous attention and numerous investigations as a promising next-generation nonvolatile memory device to address the physical limits of flash memory. Particularly, physically transient resistive switching memory is intensively researched for its degradable and environmentally friendly characteristics. Zinc oxide ($\mathrm{Zn}\mathrm{O}$), as a low-cost biocompatible and biodegradable material, has been widely used in the dielectric layer, yet many previous studies on $\mathrm{Zn}\mathrm{O}$-based memory devices show unsatisfactory switching properties. In this work, ${\mathrm{Mo}\mathrm{S}}_{2}$ quantum dots (QDs) are added between the $\mathrm{W}$ bottom electrode and $\mathrm{Zn}\mathrm{O}$ insulator by spin coating ($\mathrm{W}/{\mathrm{Mo}\mathrm{S}}_{2}$ QD$/\mathrm{Zn}\mathrm{O}/\mathrm{Ag}$) to improve its resistive switching behavior. The modified device exhibits distinctly better properties, including more-uniform switching parameters (low- and high-resistance states, ${V}_{\mathrm{set}}$, ${V}_{\mathrm{reset}}$), ultralow threshold voltages, and steady retention. Moreover, we transfer the device onto polyvinyl alcohol substrate, making it fully degradable, and it is completely dissolved in phosphate-buffered solution after 40 min. These results indicate that the ${\mathrm{Mo}\mathrm{S}}_{2}$ QD--optimized transient resistive switching memory shows great potential in green electronics, implantable biomedical devices, and secure information-storage applications.
Enhancing the Resistive Switching Performance in a Physically Transient Memristor by Doping MoS<sub>2</sub> Quantum Dots

Yizhen Li,Xinhui Zhao,Ke Chang,Yiru Niu,Xinna Yu,Hui Wang

DOI: https://doi.org/10.1103/PhysRevApplied.17.034007

IF: 4.6

2022-01-01

Physical Review Applied

Abstract:Resistive random-access memory has attracted tremendous attention and numerous investigations as a promising next-generation nonvolatile memory device to address the physical limits of flash memory. Particularly, physically transient resistive switching memory is intensively researched for its degradable and environmentally friendly characteristics. Zinc oxide (ZnO), as a low-cost biocompatible and biodegradable material, has been widely used in the dielectric layer, yet many previous studies on ZnO-based memory devices show unsatisfactory switching properties. In this work, MoS2 quantum dots (QDs) are added between the W bottom electrode and ZnO insulator by spin coating (W/MoS2 QD/ZnO/Ag) to improve its resistive switching behavior. The modified device exhibits distinctly better properties, including more-uniform switching parameters (low-and high-resistance states, Vset, Vreset), ultralow threshold voltages, and steady retention. Moreover, we transfer the device onto polyvinyl alcohol substrate, making it fully degradable, and it is completely dissolved in phosphate-buffered solution after 40 min. These results indicate that the MoS2 QD-optimized transient resistive switching memory shows great potential in green electronics, implantable biomedical devices, and secure information-storage applications.
Unconventional Resistive Switching Behavior in Fibroin‐Based Memristor

Ke Chang,Anhua Dong,Xinna Yu,Binbin Liu,Xinhui Zhao,Renzhi Wang,Zhikai Gan,Kang'an Jiang,Yiru Niu,Xinyuan Dong,Diyuan Zheng,Yizhen Li,Peng Bao,Zhuyikang Zhao,Hui Wang

DOI: https://doi.org/10.1002/aelm.202100843

IF: 6.2

2022-01-01

Advanced Electronic Materials

Abstract:Transient memristor, which can be decomposed in water after completing the designed task, has shown great potentials in data security, implantable medical devices, and eco‐friendly electronics. However, the further development of transient memristors is hindered by lacking practical approaches to deal with the dilemma between stability and degradability of the device. Here, using Ag‐doped fibroin film as a switching medium, an unconventional right‐angled‐like resistive switching behavior is observed. Based on this novel resistive switching characteristic, a high‐performance transient memristor is designed and fabricated. A self‐assembled Ag nanoclusters model is proposed to interpret this unique electron‐transport property. The self‐assembled silver nanoclusters can redistribute the charge flux and lower the potential barrier, leading to novel switching characteristics. Furthermore, the device can work at ultralow operating voltages (0.03 V) over 300 cycles with an extremely high memory window of 107. The experimental findings open up a new path to design high‐performance transient memristors for a safe and reliable data storage system.
Recent Advances in Resistive Switching Materials and Devices: from Memories to Memristors

Gang Liu,Yu Chen,Shuang Gao,Bin Zhang,Run-Wei Li,Xiaodong Zhuang

DOI: https://doi.org/10.30919/es8d779

2018-01-01

Engineered Science

Abstract:Resistive switching devices have not only been considered as an emerging candidate for the next generation information storage technology, but also demonstrated great potential for in-memory computing systems with greatly enhanced computation capability.This review focuses on the recent advances in resistive materials and devices.We first describe the electric field-induced filamentary conduction model that accounts for the resistive switching behavior observed in inorganic materials, as well as the novel electric field-engineering strategy that is used to optimize the device structure and the memory performance.The alternative ways of using organic and hybrid materials to construct resistive switching devices are then illustrated.By tuning the charge transfer interaction and solid state electrochemical redox properties in small molecules, polymer, metal-organic framework and organic-inorganic hybrid perovskite materials, bistable and multibit memories, as well as the biomimicking memristors have been fabricated.Finally, we discuss the future development of the resistive switching materials and devices, aiming to clarifying the key issues that hinders its practical applications.
Resistive Switching in Organic Memory Device Based on Parylene-C With Highly Compatible Process for High-Density and Low-Cost Memory Applications

Ru Huang,Yu Tang,Yongbian Kuang,Wei Ding,Lijie Zhang,Yangyuan Wang

DOI: https://doi.org/10.1109/TED.2012.2220142

2012-01-01

Abstract:In this paper, the resistive switching behavior of a single-component-polymer resistive memory device based on polychloro-para-xylylene (parylene-C) is comprehensively studied. With the excellent chemical stability and high process compatibility of parylene-C, an 8 × 8 crossbar array with a sandwiched structure of parylene-C and active electrodes is fabricated, which can be integrated in the CMOS back-end process and shows great potentials for future transparent, low-cost, flexible, and high-density nonvolatile memory applications. This organic memory device exhibits excellent performance with a 107 ON/OFF current ratio, nanosecond set/reset speed, and low switching voltages, as well as good retention and cycling endurance behaviors. The switching mechanism is systematically investigated with the comparison between active electrodes (Al, Cu, or Ag) and an inert electrode (Pt), as well as the dependence on temperature and device area.
Self-Selective Resistive Device with Hybrid Switching Mode for Passive Crossbar Memory Application

Zongwei Wang,Jian Kang,Guandong Bai,Guofang Zhong,Bowen Wang,Yaotian Ling,Qingyu Chen,Lin Bao,Lindong Wu,Yimao Cai,John Robertson,Ru Huang

DOI: https://doi.org/10.1109/led.2020.2992680

IF: 4.8157

2020-01-01

IEEE Electron Device Letters

Abstract:In this letter, we experimentally demonstrated a novel resistive device with a hybrid switching mode that can be alternated between volatile threshold switching and non-volatile resistive switching. The device consists of dual-functional layers VO2 /HfO2 sandwiched by symmetrical TiN electrodes. A >20 unified ratio for selectivity and memory window is obtained. Owing to the stable resistive behavior of HfO2 and insulator-metal transition of VO2, the device shows excellent uniform switching parameters in both switching modes with a high on-state current density (1E4 A/cm2) and fast switching/recovery speed (< 30 ns). This self-selective resistive memory is of great potential in the high-density crossbar array, particularly for the future 3D-Vertical resistive random access memory (RRAM) integration.
Resistive Switching in Organic Memory Devices for Flexible Applications

Ru Huang,Yimao Cai,Yefan Liu,Wenliang Bai,Yongbian Kuang,Yangyuan Wang

DOI: https://doi.org/10.1109/iscas.2014.6865266

2014-01-01

Abstract:The organic resistance memories show great potentials for future flexible applications. In this paper the main challenges and typical recent progress of the organic resistance memory devices are discussed. A kind of single-component polymer resistance memory device based on polychloro-paraxylylene (parylene-C) is focused, with excellent chemical stability and high CMOS process compatibility as well as further reduction of operation current, which is promising for future information storage in flexible systems.
Intrinsic Nanofilamentation in Resistive Switching

Xing Wu,Dongkyu Cha,Michel Bosman,Nagarajan Raghavan,Dmitri B. Migas,Victor E. Borisenko,Xi-Xiang Zhang,Kun Li,Kin-Leong Pey

DOI: https://doi.org/10.1063/1.4794519

IF: 2.877

2013-01-01

Journal of Applied Physics

Abstract:Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.
Recent progress in physically transient resistive switching memory

Wei Hu,Ben Yang,Yanming Zhang,Yin She

DOI: https://doi.org/10.1039/d0tc03668d

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:With the aim to address the physical limits of recent non-volatile flash memory, resistive switching memory has been intensively investigated as a strong competitor of the next generation memory technology. In particular, by combining the advantages of non-volatile resistive switching memory and degradable electronics, physically transient resistive switching memory has attracted more and more attention for its great potential applications in green electronics, degradable or implanted electronic devices, and secure information storage systems. This review attempts to present prompt and comprehensive summaries of recent progress in physically transient resistive switching memories that are comparable in performance to traditional resistive switching memory and expand the potential application fields of the memory devices. First, we introduce the concept and development of physically transient electronics and resistive switching memory. Second, an overview of various degradable resistive switching materials, including organic and inorganic active films, electrodes, and substrates, is described in detail. Third, recent advances in some representative mechanisms of physically transient resistive switching memories, including resistive switching and degradable mechanisms, are reviewed. Finally, we end the review with a summary and outlook, pointing out further challenges of physically transient resistive switching memory.
Thermally-stable resistive switching with a large ON/OFF ratio achieved in poly(triphenylamine).

Wenbin Zhang,Cheng Wang,Gang Liu,Xiaojian Zhu,Xinxin Chen,Liang Pan,Hongwei Tan,Wuhong Xue,Zhenghui Ji,Jun Wang,Yu Chen,Run-Wei Li

DOI: https://doi.org/10.1039/c4cc04696j

IF: 4.9

2014-01-01

Chemical Communications

Abstract:Thermally stable poly(triphenylamine) (PTPA) synthesized by an oxidative coupling reaction is used as the functional layer in memory devices, which exhibit non-volatile bistable resistive switching behavior with a large ON/OFF ratio over 5 x 10(8), a long retention time exceeding 8 x 10(3) s and a wide working temperature range of 30-390 K.
Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories with Superior Performance

Lin Chen,Yan Xu,Qing-Qing Sun,Peng Zhou,Peng-Fei Wang,Shi-Jin Ding,David Wei Zhang

DOI: https://doi.org/10.1109/led.2010.2069081

IF: 4.8157

2010-01-01

IEEE Electron Device Letters

Abstract:The excellent resistive switching characteristics of atomic-layer-deposited HfLaO-based devices are investigated for nonvolatile memory applications. With the help of nonlattice oxygen ions which is designed to incorporate into the film by decomposition of H2O2 during process, highly uniform and reproducible resistance switching cycles could be observed with the resistive ratio as high as 106 for more than 10 000 cycles. In addition, the fast operation speed (10 ns) has been demonstrated. Conduction of the off state is dominated by the space-charge-limited hopping, while the ohmic behavior dictates the on state, which suggests a filamentary conduction mechanism. Moreover, the estimated readout characteristics under different read voltages from 0.3 to 1 V were sufficiently stable to fulfill the requirement for memory application. Considering the excellent memory switching behavior, a resistance switch device composed of a promising high-k HfLaO dielectric film is a possible candidate to be integrated into future memory processes.
Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory

Kai Qian,Roland Yingjie Tay,Meng-Fang Lin,Jingwei Chen,Huakai Li,Jinjun Lin,Jiangxin Wang,Guofa Cai,Viet Cuong Nguyen,Edwin Hang Tong Teo,Tupei Chen,Pooi See Lee

DOI: https://doi.org/10.1021/acsnano.6b07577

IF: 17.1

2017-01-01

ACS Nano

Abstract:Electronics with multifunctionalities such as transparency, portability, and flexibility are anticipated for future circuitry development. Flexible memory is one of the indispensable elements in a hybrid electronic integrated circuit as the information storage device. Herein, we demonstrate a transparent, flexible, and transferable hexagonal boron nitride (hBN)-based resistive switching memory with indium tin oxide (ITO) and graphene electrodes on soft polydimethylsiloxane (PDMS) substrate. The ITO/hBN/graphene/PDMS memory device not only exhibits excellent performance in terms of optical transmittance (∼85% in the visible wavelength), ON/OFF ratio (∼480), retention time (∼5 × 104 s) but also shows robust flexibility under bending conditions and stable operation on arbitrary substrates. More importantly, direct observation of indium filaments in an ITO/hBN/graphene device is found via ex situ transmission electron microscopy, which provides critical insight on the complex resistive switching mechanisms.
Bipolar Resistive Switching in Al/GO-PEDOT:PSS/Pt Memory Devices

Hong Chao,Yuan,Huaqiang Wu,Ning Deng,Chongjie Wang,Rongshan Wei

DOI: https://doi.org/10.1109/edssc.2016.7785213

2016-01-01

Abstract:We propose graphene oxide (GO) poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) as new resistive memory material for non-volatile bipolar resistive switching memories, GO-PEDOT:PSS composites show great potential for resistance-change use in high density flexible nonvolatile memories. Repetitive high-speed switching, low switching voltage (about ±1-3V), tight distributions of HRS and LRS and long retention of more than 10 4 s have been successfully demonstrated. The mechanism of conduction and resistance switching are studied.
Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO 2 /Al/Polyimide Structure.

Jinshi Zhao,Ming Zhang,Shangfei Wan,Zhengchun Yang,Cheol Seong Hwang

DOI: https://doi.org/10.1021/acsami.7b16214

IF: 9.5

2018-01-01

ACS Applied Materials & Interfaces

Abstract:A highly flexible resistive switching (RS) memory was fabricated in the Al/TiO2/Al/polyimide structure using a simple and cost-effective method. An electronic-resistive-switching-based flexible memory with high performance that can withstand a bending strain of up to 3.6% was obtained. The RS properties showed no obvious degradation even after the bending tests that were conducted up to 10,000 times, and over 4,000 writing/erasing cycles were confirmed at the maximally bent state. The superior electrical properties against the mechanical stress of the device can be ascribed to the electronic RS mechanism related to electron trapping/detrapping, which can prevent the inevitable degradation in the case of the RS related with the ionic defects.

Human Hair Keratin for Physically Transient Resistive Switching Memory Devices

A sustainable resistive switching memory device based on organic keratin extracted from hair

Resistive Switching: Physically Transient Resistive Switching Memory Based on Silk Protein (small 20/2016)

Transient Form of Polyvinyl Alcohol-Based Devices with Configurable Resistive Switching Behavior for Security Neuromorphic Computing

Transient Resistive Switching Memory of CsPbBr3 Thin Films

Biodegradable and Flexible Resistive Memory for Transient Electronics

Ultra-Lightweight Resistive Switching Memory Devices Based on Silk Fibroin.

Enhancing the Resistive Switching Performance in a Physically Transient Memristor by Doping <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi>Mo</mml:mi><mml:mi mathvariant="normal">S</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:ms

Enhancing the Resistive Switching Performance in a Physically Transient Memristor by Doping MoS<sub>2</sub> Quantum Dots

Unconventional Resistive Switching Behavior in Fibroin‐Based Memristor

Recent Advances in Resistive Switching Materials and Devices: from Memories to Memristors

Resistive Switching in Organic Memory Device Based on Parylene-C With Highly Compatible Process for High-Density and Low-Cost Memory Applications

Self-Selective Resistive Device with Hybrid Switching Mode for Passive Crossbar Memory Application

Resistive Switching in Organic Memory Devices for Flexible Applications

Intrinsic Nanofilamentation in Resistive Switching

Recent progress in physically transient resistive switching memory

Thermally-stable resistive switching with a large ON/OFF ratio achieved in poly(triphenylamine).

Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories with Superior Performance

Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory

Bipolar Resistive Switching in Al/GO-PEDOT:PSS/Pt Memory Devices

Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO 2 /Al/Polyimide Structure.